Abstract: Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.

Abstract: A composition for forming a film capable of effectively functioning as a resist underlayer film exhibiting resistance to a solvent in a composition for forming a resist film serving as an upper layer, favorable etching property to a fluorine-containing gas, and favorable lithographic property.

Abstract: A layer including a block copolymer in which a microphase-separated structure of the block copolymer has been induced perpendicular to a substrate, this process being difficult in heating under atmospheric pressure; a method for producing the layer; and a method for producing a semiconductor device in which is used a vertically phase-separated layer of a block copolymer. A vertically phase-separated layer of a block copolymer formed by heating at a pressure below atmospheric pressure and a temperature at which induced self-assembly can occur.

Abstract: The present invention provides a thin film forming composition for energy storage device electrodes, said composition containing a conductive carbon material, a dispersant, a solvent and a polymer that has a partial structure represented by formula (P1) in a side chain. (In the formula, L represents —O— or —NH—; R represents an alkylene group having from 1 to 20 carbon atoms; T represents a substituted or unsubstituted amino group, a nitrogen-containing heteroaryl group having from 2 to 20 carbon atoms or a nitrogen-containing aliphatic heterocyclic group having from 2 to 20 carbon atoms; and * represents a bonding hand.

Abstract: R1aR2bSi(R3)4?(a+b) ??(1) A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.

Abstract: The present invention provides a compound or a pharmaceutically acceptable salt thereof containing a modified oligonucleotide with a length of 8 to 80 consecutive nucleosides, in which the modified oligonucleotide has a nucleobase sequence containing at least 8 consecutive nucleobases contained in a nucleobase sequence of any one of SEQ ID NOs: 3 to 73. With the compound or a pharmaceutically acceptable salt thereof, it is possible to treat a disease or a condition against which inhibition of CALM2 gene expression by controlling of the CALM2 gene expression is effective (particularly, congenital long QT syndrome).

Abstract: Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A fuel cell is an ammonia fuel cell using an ammonia-containing fuel. A catalyst used for an anode of the fuel cell is a ruthenium complex having two first ligands and one second ligand, and the first ligand is pyridine or a condensed cyclic pyridine compound with or without a substituent, and the second ligand is 2,2?-bipyridyl-6,6?-dicarboxylic acid with or without a substituent on a pyridine ring.

Abstract: A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R1 is an organic group containing an amino group. R2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b?2.

Abstract: A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L1 and L2 represents a C2 to C4 alkyl group, and L3 represents O or S) in an amount of 80 mass % or more.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

Abstract: To provide extracellular vesicles capable of satisfactorily activating, etc., antigen-specific T cells. Provided are said antigen-presenting extracellular vesicles that present an antigen-presenting MHC molecule and a T-cell-stimulating cytokine extramembranously.

Abstract: The invention provides a laminate having a first substrate formed of a semiconductor substrate; a second substrate formed of a light-transmissive support substrate; and an adhesive layer and a release layer disposed between the first substrate and the second substrate, characterized in that the release layer is a film formed from a releasing agent composition containing a polynuclear phenol derivative represented by formula (P) (wherein Ar represents an arylene group), a cross-linking agent, and at least one of an acid generator and an acid.

Abstract: The invention provides a resin molding and a method of producing the same in which sterilizability thereof is secured and discoloration (yellowing) thereof is reduced even when the resin molding is radiation-irradiated under anaerobic conditions (deoxidation conditions). The radiation-irradiated and packaged resin molding is primarily packaged with a packaging material having oxygen permeability and then secondarily packaged with an oxygen impermeable packaging material together with a deoxidizer. The method of producing a radiation-irradiated and packaged resin molding involves a step of primarily packaging a resin molding before radiation irradiation with a packaging material having oxygen permeability, a step of subsequently secondarily packaging with an oxygen impermeable packaging material together with a deoxidizer, and then a step of conducting radiation irradiation. A step of opening the secondary packaging under the atmosphere, following the radiation irradiation step, is preferred.

Abstract: A composition for forming a resist underlayer film which enables to form a flat film with a favorable coating even on a so-called stepped substrate and a small film thickness difference after embedding, and also a polymer as an important component of the composition for forming a resist underlayer film, a resist underlayer film formed using the composition for forming a resist underlayer film, and a method of producing a semiconductor device. The composition for forming a resist underlayer film, includes a compound of the following Formula (1) and a solvent: (wherein, Ar1, Ar2, Ar3 and Ar4 are each independently a substitutable monovalent aromatic hydrocarbon group, a, b, c, and d are each 0 or 1, and a+b+c+d=1).

Abstract: The invention provides a polynucleotide including at least one of (a) a sequence encoding a fusion protein including an antigen-presenting MHC molecule capable of being presented extramembranously of an extracellular vesicle; (b) a sequence encoding a fusion protein including a T cell stimulating cytokine or a subunit thereof capable of being presented extramembranously of an extracellular vesicle; (c) a sequence encoding a fusion protein including a T cell co-stimulatory molecule capable of being presented extramembranously of an extracellular vesicle; (d) a sequence encoding a fusion protein including an antigen-presenting MHC molecule and a T cell stimulating cytokine or a subunit thereof capable of being presented extramembranously of an extracellular vesicle; and (e) a sequence encoding a fusion protein including an antigen-presenting MHC molecule, a T cell stimulating cytokine or a subunit thereof, and a T cell co-stimulatory molecule capable of being presented extramembranously of an extracellular vesi

Abstract: The invention provides an antisense oligonucleotide capable of controlling ATN1 gene expression and treating dentatorubral-pallidoluysian atrophy. An inventive compound comprises a modified oligonucleotide consisting of 8 to 80 linked nucleosides and having a nucleobase sequence including at least 8 contiguous nucleobases that are complementary to a transcript of ATN1, or a pharmacologically acceptable salt thereof.