Abstract: A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma.

Abstract: There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

Abstract: An electric wire in which a carbon film having abrasion resistance and lubricity is formed on the outer surface of an insulation cover made from at least one kind of material selected from rubber and resin, and covering an electric wire body, and a manufacturing method of the electric wire.

Abstract: A rod-like electrode is disposed in a vacuum container, a ring-like electrode is disposed around the rod-like electrode, a tube to be processed is disposed such that the tube is substantially continuous to the ring-like electrode, an interior of the vacuum container is set to a predetermined degree of vacuum for deposition, a gas is introduced into a space between the electrodes, an electric power for forming plasma from the gas is applied while applying a magnetic field, and the plasma produced thereby is supplied into the tube. If the deposition material gas is used, the film is formed on the inner peripheral surface of the tube. If the plasma source gas for sputtering is used, a sputtering voltage is applied to a sputtering target disposed inside the tube, so that the film is formed on the inner peripheral surface of the tube by sputtering the target with ions in the plasma.

Abstract: The arc-type evaporator of the present invention includes an anode and a cathode for generating arc discharging, a trigger electrode and a gas supply pipe. The trigger electrode is contacted with the cathode to cause a first spark, and thereafter is separated from the cathode to occur the arc discharge between the anode and the cathode. The gas supply pipe is provided independently of the trigger electrode, and supplies the cathode a reactive gas which reacts with a substance forming the cathode to produce a chemical compound. The gas supply pipe includes a gas blow-out port formed in the neighborhood of the side portion or rear side portion of the cathode to face the cathode. The reactive gas is supplied from the gas blow-out port to an area including the front surface of the cathode.

Abstract: A rotary section current transmitting mechanism includes a rotary member having an outer wall of a circular cross-section and a stationary member provided around the rotary member with separation from the rotary member by ring-shaped space so as to form concentric circles with the rotary member, and having an inner wall of a circular cross-section. The ring-shaped space accommodates a film-shaped wire. Both ends of the film-shaped wire are fixed in the same direction respectively to wire fixing sections of the rotary member and of the stationary member, and the film-shaped wire curves between the both ends. The film-shaped wire has a configuration in which conductors are sandwiched between insulating films. This configuration enables electric current to be stably transmitted from the stationary member to the rotary member which rotates forward and backward within a predetermined angle.

Abstract: A radio-frequency type charged particle accelerator includes a RFQ accelerator and a rear stage RF accelerator both of which are contained in a single evacuated chamber. The RFQ accelerator has quadrupole electrodes positioned along a traveling path of the charged particle and bunches and accelerates a charged particle beam by receiving a radio-frequency power from a radio-frequency power source and resonating. The rear stage RF accelerator is disposed in a rear stage of the RFQ accelerator and accelerates or decelerates the energy of the charged particle beam accelerated by the RFQ accelerator by receiving the radio-frequency power from the radio-frequency power source and resonating. A separating plate is disposed in the single evacuated chamber to separate the RFQ accelerator from the rear stage RF accelerator so that the RFQ accelerator and the rear stage RF accelerator work independently of each other.

Abstract: A radio-frequency type charged particle accelerator includes a first Radio Frequency Quadrupole (RFQ) accelerator, a second RFQ accelerator and a rear stage Rf accelerator. The first RFQ accelerator has quadrupole electrodes positioned along a traveling path of a charged particle beam and bunches and accelerates the charged particle beam by receiving a radio-frequency power from a radio-frequency power source and resonating. The rear stage RF accelerator is disposed in a rear stage of the first RFQ accelerator and changes the energy of the charged particle beam by receiving the radio-frequency power from the radio-frequency power source and resonating. The second RFQ accelerator is disposed between the first RFQ accelerator, has quadrupole electrodes positioned along the traveling path of the charged particle beam and normally accelerates the charged particle beam by receiving a radio-frequency power from the radio-frequency power source and resonating.

Abstract: A metal ion implanting apparatus according to the present invention includes a vacuum vessel also serving as an anode, a holder for holding a substrate to be processed, a plurality of arc evaporation sources, a plurality of arc power supplies and a bias power supply. Each of the plurality of arc evaporation sources has a cathode including at least one of metal and a metal compound. The cathode evaporates cathode substance by arc discharge between the cathodes and the vacuum vessel also serving as the anode. Each of the plurality of arc power supplies supply an arc discharge voltage between the cathode of the arc evaporation source corresponding to the arc power supply and the vacuum vessel with the cathode as a negative side. The bias power supply for applying a negative pulse-like bias voltage on a base of a potential of the vacuum vessel to the holder and the substrate held by the holder.

Abstract: In a method and an apparatus of orientation treatment of an orientation film according to the present invention, the surface of a orientation film formed on a substrate for orientating liquid-crystal molecules is rubbed in a predetermined direction. Thereafter ion beams are radiated onto the orientation film in a vacuum in a direction different from the rubbing direction, that is, in the direction obliquely above the orientation film surface. In the method, these steps can be reversed.

Abstract: A substrate holding device of the invention includes a base cooled with a heat absorbing fluid, a flexible sheet being extended on a surface of the base for forming a sealed portion between the sheet and the base, a heat absorbing fluid with which the sealed portion is filled, a sheet-like rubber elastic material being disposed on the sheet, and a substrate retainer for pressing fringes of a substrate, placed on the rubber elastic material, against the base. Metal elastic members may be distributed almost uniformly in the sealed portion, in place of or together with, the rubber elastic material.

Abstract: A film forming apparatus includes a film forming chamber in which a film is formed on a substrate at a film forming position, a plurality of load lock chambers provided on the film forming chamber through gate valves respectively, a plurality of pivots provided in the film forming chamber correspondingly to the respective load lock chambers, and carrying arms supported by the pivots respectively so as to move the substrate from any one of the load lock chambers to the film forming position and contrariwise from the film forming position to any one of the load lock chambers.

Abstract: A plasma material gas is introduced into a plasma producing chamber, and, if necessary, a processing gas is introduced into a processing chamber communicated with the plasma producing chamber. In the plasma producing chamber, a microwave is radiated to a sintered body of metal oxide forming a plasma source, so that plasma is generated from the plasma material gas. Ions generated thereby are accelerated and introduced into the processing chamber. Predetermined processing is performed on a work directly by the ions, or is performed in a plasma generated by the ions from the processing gas.

Abstract: In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

Abstract: In a plasma processing apparatus, wherein a power application electrode for generating plasma and an electrode opposed thereto are disposed in a process chamber which can be exhausted to attain a predetermined vacuum pressure, an electric power is applied to the power application electrode to generate the plasma from a process gas introduced between the electrodes, and intended plasma processing is effected on a substrate mounted on one of the electrodes in the plasma, the apparatus includes a particle discharge duct which surrounds a periphery and a rear side of the power application electrode and has an opening at a position neighboring to the periphery of the power application electrode, and an exhaust device connected to the duct at a position corresponding to a central portion of the rear side of the power application electrode.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Abstract: A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.

Abstract: A film forming apparatus includes a film forming chamber in which a film is formed on a substrate at a film forming position, a plurality of load lock chambers provided on the film forming chamber through gate valves respectively, a plurality of pivots provided in the film forming chamber correspondingly to the respective load lock chambers, and carrying arms supported by the pivots respectively so as to move the substrate from any one of the load lock chambers to the film forming position and contrariwise from the film forming position to any one of the load lock chambers.

Abstract: Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.