Abstract: An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18.

Abstract: A substrate holding apparatus includes an electrostatic chuck for electrostatically chucking and holding a substrate, an chucking power supply for applying a DC chucking voltage to the electrostatic chuck, a chuck drive device for mechanically driving the electrostatic chuck, and a drive control unit for controlling the chuck drive device by applying command information. The apparatus further includes a chucking control unit which compute the accelerations at each time point that the substrate being held undergoes when the electrostatic chuck is mechanically moved, according to the command information which is applied from the drive control unit to the chuck drive device, computes an chucking force required for holding the substrate at each time point by using the accelerations thus computed, and varies an chucking voltage output from the chucking power supply according to the computed chucking force so that the electrostatic chuck generates the computed chucking force.

Abstract: When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are generated when the ion beam collides with a plasma generating gas which flows out of the plasma production chamber into a path of the ion beam. The secondary electrons are led into the plasma production chamber by the positive voltage, and within the plasma production chamber, a plasma ignition is triggered using the secondary electrons led into the plasma production chamber and a radio frequency.

Abstract: A power fluctuation monitoring unit which monitors and detects the power fluctuation at a receiving point 9 by means of the measurement results of the voltage at injection point 14 of an intermediate-order harmonic current and the current at incoming line 10, a power compensation unit which forms the compensation power injection signal for canceling out the power fluctuation based on the detection results of the power fluctuation, and an inverter device 18 which is driven and controlled by the signal resulting from the addition of the intermediate-order harmonic current injection signal and the compensation power injection signal and injects the intermediate-order harmonic current and the compensation power into the injection point, are equipped.

Abstract: In an ion source, a rear reflector 10 is electrically insulated from both a plasma production vessel 2 and a filament 6. The rear reflector 10 and an opposed reflector 8 are electrically connected. Further, a DC bias power supply 32 is a power supply individuated from a filament power supply 24 and an arc power supply 26. The DC bias power supply 32 is placed for applying a bias voltage VB between the opposed reflector 8 and the rear reflector 10 and the plasma production vessel 2 with both the reflectors 8 and 10 as negative potential.

Abstract: A substrate chucking apparatus includes an electrostatic chuck for electrostatically chucking a substrate, and a DC power supply for applying a DC chucking voltage to the electrostatic chuck. An amplitude of the chucking voltage Vc is exponentially decreased with respect to a chucking time after an operation of chucking the substrate starts. Such a control of the chucking voltage variation is executed by a control device.

Abstract: Anion implantation apparatus includes an ion source for extracting ions therefrom at an extraction voltage, an acceleration pipe for accelerating the ions thus extracted at an acceleration voltage of VA and a momentum segregation magnet for selecting the ions having a specific momentum from the ions extracted from the acceleration pipe so that the desired ions are caused to be incident on a target. Assuming that MI denotes the mass number of the desired ions, ZI denotes the valence thereof, Mc denotes the mass number of noted impurity ions of the impurity ions generated an upstream side of the acceleration pipe, and ZC denotes the valence thereof, if the relationship that the value of MI·(VE+VA)/ZI and that of MC·VA/ZC are equal or approximately equal to each other is satisfied, one of the extraction voltage VE and the acceleration voltage VA is increased and the other thereof is decreased while the value of (VE+VA) is maintained substantially constant.

Abstract: The vacuum arc evaporation apparatus removes coarse particles from plasma containing cathode materials generated from a cathode 7 provided to a evaporation source 6 by a vacuum arc discharge, and is provided with a porous member 10 on the inside wall of a plasma duct equipped with means for forming deflection magnetic field having a magnetic coil 8 outside thereof so as to guide the plasma in the vicinity of a substrate 11 accommodated in the film forming chamber 1.

Abstract: The invention provides a plasma CVD method and device which can form a uniform or substantially uniform film on an outer surface of an object independently of the shape of the object, and also provides an electrode used in the method and device. More specifically, a plasma is formed from a deposition material gas by supplying an electric power to the gas, and a film is formed on the outer surface of a hollow object having an opening under the plasma. The electrodes for supplying the electric power for forming the gas plasma include an internal electrode arranged in an inner space of the hollow object and an external electrode arranged outside the object. The internal electrode can selectively have a reduced form allowing passage of the electrode through the opening of the hollow object and an enlarged form predetermined in accordance with the volume and shape of the inner space of the object.

Abstract: An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600° C. to lower than 1170° C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3−x (x is 1, 2 or 3) may be used.

Abstract: A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma.

Abstract: The ion-implanting apparatus includes an implanting control device 26a having the functions of sweeping an ion beam by a sweeping magnet 12 and scanning a target by a scan mechanism. The implanting control device 26a has the functions of changing a sweep frequency of the ion beam to be swept by said sweeping magnet according to at least one of the species and energy of the ion beam and changing the minimum number of times of scanning of the target to be scanned by said scan mechanism according to the changing of the sweep frequency.

Abstract: A charge-up measuring apparatus has a plurality of measurement conductors being arranged on a plane crossing an ion beam for receiving the ion beam, a plurality of bidirectional constant-voltage elements connected to the measurement conductors in a one-to-one correspondence, and a plurality of current measuring instruments each for measuring the polarity and the magnitude of an electric current flowing through the corresponding bidirectional constant-voltage element.

Abstract: When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are generated when the ion beam collides with a plasma generating gas which flows out of the plasma production chamber into a path of the ion beam. The secondary electrons are led into the plasma production chamber by the positive voltage, and within the plasma production chamber, a plasma ignition is triggered using the secondary electrons led into the plasma production chamber and a radio frequency.

Abstract: An ion source vaporizer comprises a hollow vaporizer main body, a heater, and a nozzle. The hollow vaporizer main body has an opening portion. The heater is installed outside the vaporizer main body and evaporates a solid sample within the vaporizer main body. The nozzle feeds a vapor produced within the vaporizer main body into an arc chamber. The ion source vaporizer further comprises a crucible for filling the solid sample which is provided within a cavity of the vaporizer main body, and a pressing unit for pressing a crucible bottom against a cavity bottom of the vaporizer main body. One end of the nozzle is screwed with an upper part of the crucible.

Abstract: A method of forming a silicon-contained crystal thin film can efficiently form the crystal thin film of a relatively large thickness. In the method, hydrogen ions are implanted into a silicon-contained crystal substrate. Voids are formed by immersing the ion-implanted crystal substrate in a melted metal liquid containing, e.g., silicon and indium for heating the substrate. While pressing an ion-injected surface of the substrate, the substrate is heated by the melted metal liquid to form the voids. By cooling the liquid, the silicon in the supersaturated liquid is deposited on the surface of the substrate so that the silicon-contained crystal film is formed on the surface of the substrate. The substrate is divided in the void-formed position. Thereby, a thin film including the silicon-contained crystal film layered on a portion of the substrate is obtained. The silicon-contained crystal thin film thus obtained can be adhered to a support substrate, if necessary.

Abstract: The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from the material gas is performed by applying an RF power and a DC power, and the DC power is applied to an electrode carrying the deposition target object. The present invention also provides a plasma CVD apparatus for forming a plasma from a deposition material gas by applying an electric power from the power applying means, and thereby forming a film on a deposition target object by exposing the deposition target object to the plasma, wherein the power applying means includes RF power applying means and DC power applying means, and the DC power applying means applies an electric power to the electrode carrying the deposition target object.

Abstract: A DC-DC converter has converter circuit portions 11 and 12, transformers Tr1 and T r2, and rectifier circuit portions 21 and 22. Two sets of converter circuit portions 11 and 12 respectively include two pairs of switching elements Q1 to Q4, and two pairs of switching elements Q5 to Q8 connected in full bridge configuration, series capacitors C1 and C2 are inserted and connected between the converter circuit portions 11 and 12 and the transformers Tr1 and Tr2 respectively. The switching phase of one switching element Q4 or Q8 is shifted by a 1/3n period from the switching phase of the other switching element Q1 or Q5 in the pair of switching elements. The switching phases of corresponding switching elements Q1 and Q5 in the converter circuit portions 11 and 12 are shifted by a 1/2n period from each other.

Abstract: A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma.

Abstract: According to the invention, a complex (M or M′) formed by stacking in a closely contacted state a single crystal &agr;-SiC base material (1) and a polycrystalline plate (2) which is produced into a plate-like shape by the CVD method with interposing an intermediate layer (4 or 4′) containing Si and O as fundamental components, such as silicon rubber between opposing faces of the two members (1) and (2) in a laminated manner is heat-treated at a temperature of 2,200° C. or higher, and under a saturated SiC vapor pressure, thereby causing polycrystal members of the polycrystalline plate (3) to be transformed in a same direction as single crystal of the single crystal &agr;-SiC base material (1) to integrally grow single crystal. Therefore, single crystal SiC of a high quality in which crystal defects and distortion are prevented from occurring and micropipe defects hardly occur can be produced easily and efficiently.