Abstract: Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers.

Abstract: A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target through an inert gas ion beam drawn out of an ion source in a vacuum vessel. An aluminum film coated matter formed by coating a surface of a synthetic resin substrate with an aluminum film, is characterized in that the aluminum film contains aluminum crystals at a portion in the film at a depth of not more than 600 .ANG. from a film surface thereof which contacts with the substrate. The aluminum crystals has a relation in which a crystal axis <111> perpendicular to a (111) plane is perpendicular or substantially perpendicular to the film surface. Also, the aluminum crystals exhibits a diffraction X-ray spectrum of a (111) plane when measured by X-ray diffraction according to a diffractometer method under the following conditions: target: Cu, X-ray type: K.alpha.

Abstract: A composite substrate comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a metal layer formed on the ceramic layer, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, each of the mixed layers being composed of the materials of the layers situated on both sides thereof. The composite substrate may comprise a plurality of electrically insulating dissimilar ceramic layers between the metal substrate and the metal layer, and a mixed layer formed in an area near the interface between any two of the adjacent ceramic layers.

Abstract: An ion source for producing wide, large area type ion beams with a mass-separation device. Four, five six or so electrode plates with ion holes at the same positions are installed at the outlet of the ion source. Second or third one of the electrodes has Wien filters at the ion holes. The Wien filter has permanent magnets and electrodes for producing a magnetic field and an electric field perpendicular to the axial direction of the ion holes. Ion beams which have not been accelerated so fast are separated by mass by the Wien filter. Low kinetic energy of ions alleviates the strength of the magnetic field and the electric field. Wide, large area type ion beams without impurities are obtained.

Abstract: A connection control device for controlling the connection of a small generator unit, which is installed at the consumer's location, to an electric power system. The connection control device detects variations in frequency components which result from interruptions in the distribution of electric power to the consumer from the electric power system. When a significant variation in a frequency component is present, the connection control device disconnects the consumer from the electric power system in order to prevent injury to line workers.

Abstract: An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.

Abstract: A device for measuring a gas dissolved in an oil comprising a sample container for containing a sample oil, an air bubble generator for extracting the gas dissolved in the oil, a gas container for containing the gas, a gas sensor for detecting the gas charged in the gas container, gas measuring means for measuring a concentration of the gas in response to a signal dispatched from the gas sensor, and a pump for supplying air to the air bubble generator.

Abstract: A method of forming a diamond film on a substrate comprises the steps of depositing carbon on said substrate in vacuum by vapor deposition, and irradiating accelerated ions onto said substrate, said ions being obtained by ionizing a gas composed of at least one of a hydrogen gas, inert gases, hydrocarbon gases, organic compound gases and silicon base gases.

Abstract: Method of forming aluminum nitride film on a substrate by subjecting the substrate to aluminum evaporation and nitrogen ion irradiation in a vacuum. Defects in the aluminum nitride film due to ion irradiation is minimized by irradiating the substrate with low energy nitrogen ions, i.e., nitrogen ions having an energy level no higher than 1 KeV. The particle ratio (composition ratio of Al/N) used in forming the aluminum nitride film is between 0.5 to 2.0.

Abstract: Apparatus and method for measuring a dissolved gas in oil wherein air is blown into an oil sample through a bubble generator, bubbles are passed through the oil sample to extract dissolved gas therefrom, a resulting air-extracted gas mixture is contacted by a gas sensor for detecting and measuring the dissolved gas and the mixture is recirculated through the oil sample. Preferably, the air bubbles are within the range of 0.1 mm to 8.0 mm, and, also, the volume of the apparatus is selected so that the quantity of the gas to be measured is not more than 20% of the combined volume of the extraction vessel, the sensor chamber, and the connecting conduit.

Abstract: A process for producing a superconducting thin film on a surface of a substrate of the present invention comprises the steps of: sputttering a target made of a group IIIa metal and/or an oxide thereof, a group IIa metal and/or an oxide thereof and copper and/or an oxide theref with an ion beam or a neutral beam to allow the sputtered particles from the target to be deposited on the substrate; and impinging an oxygen neutral beam on the substrate.

Abstract: A method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by are discharge at a carbon cathode while applying a voltage to the substrate to deposit carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes.

Abstract: A surface analyzer for analyzing the atomic composition of the surface of sample. An ion source generates a proton beam. A magnet directs the proton beam through an accelerating device toward the sample for collision therewith. Protons that are scattered at an angle of 180.degree. pass through the accelerating device in the reverse direction and are decelerated. The magnet directs the protons as a parallel beam to a position detecting device that indicates the position at which the proton beam strikes and energy loss of the protons can be determined.

Abstract: A coated material comprises: a substrate; and a film containing boron, nitrogen and one selected from a group consisting of silicon and germanium, the film being formed on the substrate. An X-ray exposure mask of the present invention comprises: an X-ray absorbent layer; an X-ray permeable support layer for supporting the absorbent layer; and a mask support member for supporting the support layer; wherein the support layer contains boron and nitrogen and one element selected from a group consisting of silicon and germanium.

Abstract: A process for producing a superconducting thin film of the present invention comprises: supplying onto a substrate a group IIa metal and/or an oxide thereof, a group IIIa metal and/or an oxide thereof, and copper and/or an oxide thereof; and irradiating the substrate with an oxygen neutral beam, to thereby form a thin film of IIa-IIIa-Cu oxide.

Abstract: A method for depositing a thin aluminum film in a vacuum on a surface of a substrate which comprises the steps of:(a) Irradiating the surface of the substrate with a beam of ions of an inert gas, having a kinetic energy ranging from 100 eV to 1,000 eV at an angle of incidence ranging from about 0.degree. to 60.degree. to a normal of the surface.(b) Depositing vaporized aluminum on the surface of the substrate, in which the ratio of the amount of ions irradiating the surface to the amount of vapor deposited on the surface ranges from about 0.5% to 30% and wherein the temperature of the substrate ranges from about room temperature to 300.degree. C.

Abstract: An end station for ion implantation apparatus comprising an ion implantation process unit having a wafer holder and capable of implanting ions in wafers in a high vacuum, and a wafer supply-collection unit for the process unit.

Abstract: A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evapo

Abstract: An apparatus for ion and vapor deposition comprises an ion implantation assembly including an ion source, a power supply for the ion source and an accelerator-injector for implanting ions from the ion source, a film forming assembly including an evaporation source and a power supply for the evaporation source, and a control assembly for controlling the two assemblies. The control assembly comprises means for maintaining ion implantation and vapor deposition in a specified ratio at all times when ion implantation and vapor deposition are effected at the same time and, which assures that ion implantation and vapor deposition are effected at the same time in a specified ratio to form a thin film of good quality and strong adhesion.

Abstract: A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evapo