Abstract: An electromagnetic waveform developing in synchronism with a system power supply by a partial discharge of electric equipment such as a power distribution device is received by an antenna 1. From the electromagnetic waveform of measurement frequency included in the received signal, there are extracted a component changing according to the frequency of the system power supply and a component changing at the frequency twice that of the system power supply. The presence or absence of discharge is determined from the magnitude of each of the extracted components, thereby detecting a partial discharge.

Abstract: A method and apparatus for radiation of ions from an ion source 4 onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source 5 onto the surface of the substrate, simultaneously while the substrate is continuously moved. The ion radiation from the ion source 4 is applied to a portion of a region reached by the evaporation material from the evaporation source 5, upstream relative to the direction of movement of the substrate from the center of that region and which is lower in evaporation speed than the center of the region, to thereby continuously form a mixture layer of substrate material atoms and evaporation material atoms on the surface of the substrate and then continuously form a vacuum evaporation film with a predetermined thickness on the mixture layer.

Abstract: This ion source is set up to satisfy a relation

Abstract: A vaporizing apparatus has a vaporizing container into which a liquid raw material is introduced and which is made of metal, a heater for heating the vaporizing container to vaporize liquid introduced into the vaporizing container and a metal nozzle (an electrode) disposed in the vaporizing container in such a manner that the nozzle is electrically insulated from the vaporizing container. Moreover, the vaporizing apparatus has a cleaning-solution supply apparatus for supplying, to the inside portion of the vaporizing container, a cleaning solution for solving residues generated in the vaporizing container and a plasma generating power source for supplying high-frequency electric power to a position between the nozzle and the vaporizing container to generate plasma in the vaporizing container by using the vaporized cleaning solution.

Abstract: A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.

Abstract: RFQ electrodes for use as an acceleration tube of a high energy ion implanter, capable of accelerating an ion beam of large current without divergence are arranged, with respect to a low resonance frequency of substantially 33 MHz suitable for heavy ions such as B, P, and As, such that a radius R1 of a beam passage spacing surrounded by four RFQ electrodes is 5 mm to 9 mm, a curvature R2 in a direction perpendicular to an axis of a crest portion of repetitive crest and trough portions on surfaces of the electrodes in a beam propagation direction is 5 mm to 9 mm, and a height H from a peak of the crest portion to a bottom surface is set so that H/R1 is 4 to 6. When the height H of the electrodes is reduced, while shunt impedance is increased and power efficiency is improved, a cooling ability becomes insufficient due to the fact that a cross section of a coolant channel cannot be increased, and a problem is presented that oscillation of electrodes is likely to occur due to insufficient mechanical strength.

Abstract: Frequencies fx between the measurement harmonic (mth-degree harmonic) and the (m±1)th-degree harmonics are determined from an expression of fx=(fs*m)±{(fs/n)*k)} where n and k are each an integer. Currents of inter-harmonics of the frequencies fx above and below the measurement harmonic are injected into an inject point in a power system in n cycles of the fundamental wave. Voltage at the inject point based on the injected currents and currents at least either upstream or downstream from the inject point are measured. Admittances for the inter-harmonics above and below the measurement harmonic on at least either the upstream or downstream side from the harmonic inject point are calculated from the measurement results. Interpolation processing based on the calculation results is performed, thereby finding and determining an admittance for the measurement harmonic.

Abstract: An insulating member is interposed between a film formation chamber container and a plasma chamber container. Both containers are adjacent to and communicated with each other. In the film formation chamber container, a base material holder is provided for holding the base material. Raw material gas is introduced into the plasma chamber container and ionized by high frequency electric discharge, to generate plasma. A high frequency electrode and a high frequency electric power source are provided as a plasma generating unit. There is provided a porous electrode 30, the electric potential of which is the same as that of the plasma chamber container 24, between both chambers 22, 24 to partition both chambers.

Abstract: A first coil is provided at a position near the start terminal (closer to the window) of plasma chamber. A second coil is provided at a position near the end terminal thereof (plasma electrode). To adjust an ion beam current, a constant current, which is capable of developing a magnetic field greater than a resonance magnetic field, is fed to the first coil, and a second coil current is varied within a range within which it develops a magnetic field less than the resonance magnetic field.

Abstract: A work is supported by a work support electrode arranged in a vacuum container, a treatment gas corresponding to intended treatment of the work is supplied into the container, and a vacuum is produced in the container. Plasma is formed from the gas by applying an amplitude-modulated high-frequency power to an electrode electrically insulated from the work support electrode, said amplitude-modulated high-frequency power being prepared by effecting amplitude modulation on a basic high-frequency power having a predetermined frequency in a range from 10 MHz to 200 MHz with a modulation frequency in a range from 1/1000 to 1/10 of said predetermined frequency. A positive pulse voltage is applied to the work support electrode to effect the treatment on the surface of the work supported by the work support electrode.

Abstract: A large-area ion beam having a one-directionally long section is generated in a magnetically shielded ion source. The ion beam is bent evenly to form a large center angle of about 90 degrees in the direction of the short side by a window/frame type magnet having a large gap and having left and right frames each wound with a plurality of coils. Then, the ion beam is made to pass through a slit plate having a one-directionally long opening so that unnecessary ions are removed. The ion beam is then radiated onto a subject which makes a translational motion in the direction of the short side of the beam.

Abstract: A system interconnection device connected between two systems, such as a commercial bus line carrying power from a commercial power line and a private bus line carrying power from a private power generator, is able to connect and disconnect the two systems, and, in the event of a fault, has a current-limiting effect, thus preventing instantaneous voltage drop of the respective bus lines. In the system interconnection device, unit parallel circuits made up of diodes and DC reactors are serially connected so that the diodes thereof have opposite directions. With this structure, in realizing operations equivalent to those of a conventional system interconnection device having a DC reactor between DC terminals of a single-phase rectifying bridge circuit, the number of diodes, which are rectifying elements, can be halved.

Abstract: A crucible is formed of metal, that is, any one of Mo, Ta and W with a thickness of 3 mm or more, and the crucible is melted to produce melted Si liquid, thereby forming a molecular beam. An inner surface of the crucible can be coated with silicide. Also, resistance-type heaters can be used to heat solid Si in the crucible into the liquid Si. Such heaters can include reflection portions surrounding the crucible. The crucible can be used as an effusion cell in a molecular beam epitaxy system.

Abstract: An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is made of at least one kind of material selected from a group including polymer material such as resin or rubber as well as glass, and the contact portion has a surface entirely or partially coated with a carbon film (typically, a DLC film) having a wear resistance as well as at least one of a lubricity, a water repellency and a gas barrier property. The carbon film is formed on the object with a good adhesion.

Abstract: A film is deposited on a target object by exposing the target object to film deposition plasma of a film deposition material gas while irradiating the target object with ion beams. An ion source is used for the irradiation with the ion beams. The ion source has a plasma container and an ion beam producing electrode system formed of four electrodes. The plasma container and the first electrode located in an inner position nearest to the plasma container carry a positive potential. The second electrode carries a negative potential or a lower potential than the film deposition plasma. The third electrode carries a positive potential or a higher potential than the film deposition plasma. The fourth electrode in the outer position remotest from the plasma container carries a ground potential.

Abstract: A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

Abstract: Single-phase currents at two frequencies f.alpha. and f.beta. (f.alpha.<n.multidot.fs<f.beta.) of non-integral multiples of a system fundamental wave frequency fs sandwiching an targeted harmonic (frequency n.multidot.fs) are injected between two phases of a three-phase power system as interharmonic currents. A frequency analysis of measurement current and measurement voltage of each phase in the system is carried out and a positive-phase-sequence current I1, a positive-phase-sequence voltage V1, a negative-phase-sequence current I2, and a negative-phase-sequence voltage V2 are detected for each of the two frequencies f.alpha. and f.beta. in the system based on injecting of the interharmonic currents. Positive-phase-sequence and negative-phase-sequence admittances Y1 and Y2 or positive-phase-sequence and negative-phase-sequence impedances Z1 and Z2 are found for each of the frequencies f.alpha. and f.beta. in the system as Y1=I1/V1 and Y2=I2/V2 or Z1=V1/I1 and Z2=V2/I2.

Abstract: A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.

Abstract: A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve.

Abstract: A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma.