Abstract: A semiconductor wafer processing system in accordance with an embodiment of the present invention includes a loading station, a load lock, a process module, an intermediate process module, and a transport module which further includes a load chamber, a transfer chamber, and a pass-through chamber between the load chamber and the transfer chamber. The intermediate process module may be coupled to the load chamber, or both the load chamber and the transfer chamber. In one embodiment, the load lock is a single-wafer load lock capable of accommodating only a single wafer at a time to allow for fast pump down and vent cycles. In one embodiment, the pass-through chamber is configured as a cooling station to improve throughput for processes that require the wafer to be cooled in-between depositions, for example.

Abstract: A method of damping a semiconductor wafer handling arm by attaching a spring and a mass coupled to the spring to form a mass spring system that is tuned to vibrate at a structural resonant frequency of the vibrating wafer handling arm. The spring has temperature insensitive spring characteristics and the mass and spring are constructed of materials that do not outgas or produce contaminants in a semiconductor processing environment. The mass spring system is preferably a cantilever beam spring connected to a high response point on the vibrating arm and oriented to vibrate in a plane perpendicular to the plane of the wafer. The mass is slidably adjustable along the length of the cantilever beam spring to adjust the resonant frequency. Vibration damping of the wafer handling arm is accomplished by the transfer of kinetic energy from the vibrating wafer handling arm to the mass spring system.

Abstract: A process for enhancing the adhesion of directly plateable materials to an underlying dielectric is demonstrated, so as to withstand damascene processing. Using diffusion barriers onto which copper can be deposited facilitates conventional electrolytic processing. An ultra-thin adhesion layer is applied to a degassed, pre-cleaned substrate. The degassed and pre-cleaned substrate is exposed to a precursor gas containing the adhesion layer, optionally deposited by a plasma-assisted CVD process, resulting in the deposition of an adhesion layer inside the exposed feature. The treated wafer is then coated with a diffusion barrier material, such as ruthenium, so that the adhesion layer reacts with incoming diffusion barrier atoms. The adhesion layer may be selectively bias-sputter etched prior to the deposition of the diffusion barrier layer. A copper layer is then deposited on the diffusion barrier layer.

Abstract: A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the heated low k insulating layer for adsorption of such gaseous particles onto the heated surface, wherein the insulating layer maintains its original thickness. A capping layer is then deposited directly over the insulating layer wherein the treated surface area of the insulating layer significantly improves adhesion between the insulating layers and the capping layers to prevent delamination therebetween during subsequent processing steps of forming the integrated circuit.

Abstract: A method of endpoint detection during plasma processing of a semiconductor wafer comprises processing a semiconductor wafer using a plasma, detecting radiation emission from the plasma during the semiconductor processing, and tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing. At any point prior to or during processing a plurality of profiles are provided, each profile representing a different processing condition affecting detection of the desired plasma processing endpoint of the semiconductor wafer. After selecting a desired profile, a first set of parameters are input, representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches a desired endpoint.

Abstract: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

Abstract: The present invention provides apparatus and methods for controlling flow dynamics of a plating fluid during a plating process. The invention achieves this fluid control through use of a diffuser membrane. Plating fluid is pumped through the membrane; the design and characteristics of the membrane provide a uniform flow pattern to the plating fluid exiting the membrane. Thus a work piece, upon which a metal or other conductive material is to be deposited, is exposed to a uniform flow of plating fluid.

Abstract: A method describing a low temperature process of forming a cobalt nitride layer using electroless deposition, followed by a nitridation step, is disclosed. The process described is useful in integrated circuit device fabrication applications, especially those involving the use of copper. The invention can be used to create a highly effective capping layer in high interconnect copper devices.

Abstract: The present invention pertains to methods for cleaning semiconductor wafers, more specifically, for removing polymeric and other residues from a wafer using dry plasmas generated with microwave (MW), electromagnetic field (inductively-coupled plasma (ICP)), and radio frequency (RF) energy. First, a wafer is treated by applying a microwave-generated plasma or an inductively-coupled plasma. Second, a radio frequency generated plasma is applied. Each of the microwave-generated plasma and the inductively-coupled plasma is produced from a gas mixture, which includes an oxygen source gas, a fluorine source gas, and a hydrogen source gas. Using such plasmas provides more controllable etch rates than conventional plasmas via control of fluorine concentration in the plasma. Application of a radio frequency generated (preferably oxygen-based) plasma is used for additional photoresist and polymer removal.

Abstract: Methods and apparatus are provided for conditioning of polishing surfaces utilized during CMP processing. The method comprises contacting the polishing surface and a conditioning surface with a first force, one of the surfaces coupled to a support member that has an axis. The polishing surface and/or the conditioning surface is moved at a constant velocity. Torque exerted by the support member about the axis to effect a relative position between the conditioning surface and the polishing surface is measured and used to obtain a process variable. The process variable is compared to a setpoint value for the relative position of the conditioning surface and the polishing surface. A second force is calculated and the polishing surface and the conditioning surface then are contacted with the second force, if the process variable differs from the setpoint value by more than an allowed tolerance.

Abstract: The present invention pertains to apparatus and methods for introduction of solid precursors and reactants into a supercritical fluid reactor. Solids are dissolved in supercritical fluid solvents in generator apparatus separate from the supercritical fluid reactor. Such apparatus preferably generate saturated solutions of solid precursors via recirculation of supercritical fluids through a vessel containing the solid precursors. Supercritical solutions of the solids are introduced into the reactor, which itself is charged with a supercritical fluid. Supercritical conditions are maintained during the delivery of the dissolved precursor to the reactor. Recirculation of supercritical precursor solutions through the reactor may or may not be implemented in methods of the invention. Methods of the invention are particularly well suited for integrated circuit fabrication, where films are deposited on wafers under supercritical conditions.

Abstract: Methods and apparatus are provided for performing a chemical-mechanical process on a workpiece surface. The apparatus includes a platen having a top surface and at least one inlet configured to receive a polishing fluid, a plurality of holes formed in the top surface, a manifold system in fluid communication with the at least one inlet and each of the holes, a controller adapted to supply valve command signals, and a plurality of valves, each valve being disposed in one of the holes and coupled to the controller to receive the valve command signals and being operable, in response thereto, to selectively move between an open and a closed position. The method includes the steps of supplying the valve command signals, and selectively opening and closing the valves in response to the valve command signals.

Abstract: A system and sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto the substrate in an evacuated chamber includes introducing at least one feed gas into the chamber; generating a plasma from the feed gas; exposing said substrate to ions and/or radicals formed by the plasma; modulating any ions; reacting the substrate with said modulated ions and/or radicals to remove any contaminants from the substrate and producing a modified substrate.

Abstract: Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.

Abstract: A method is provided for controlling a chemical mechanical polishing (CMP) operation. The method is operative in a CMP apparatus having a plurality of end point detection probes and in which a plurality of process variables can be set to adjust the removal rate across a layer that is to be polished. In accordance with the method, the process variables are adjusted to a first setting and a layer overlying a work piece is polished using that setting. Information from the plurality of end point detection probes is collected and evaluated to determine removal rate of the layer. The process variables are adjusted in response the evaluation and a second layer on a second work piece is polished using the adjusted settings.

Abstract: In one embodiment, a wafer-handling robot in a wafer processing system is automatically calibrated by determining an orientation of the robot relative to a chassis of the wafer processing system, determining hand-off coordinates of a load port in the wafer processing system, and determining hand-off coordinates of a load lock in the wafer processing system. Also disclosed is a calibration fixture for automatically calibrating the wafer-handling robot to the load port.

Abstract: A method and system are provided for endpoint detection of plasma chamber cleaning or plasma etch processes. Optical emission spectroscopy is utilized to determine a spectral emission ratio of two or more light emitting reaction components at wavelengths in close proximity. When a spectral emission ratio or derivative thereof or mathematical function thereof falls below a selected threshold value, the plasma process may be terminated within a calculated time from the threshold value prior to an endpoint value cutoff. Advantageously, the system and methods of the present invention provide real-time, in-situ monitoring of plasma clean or etch processes to optimize the process and avoid under-cleaning or over-cleaning.

Abstract: An assembly for a chemical-mechanical polishing process includes a platen having an outer edge, a top surface, and at least one inlet for introducing fluid to the top surface; a manifold system, entrenched in the top surface and in communication with the at least one inlet, for channeling the fluid about the top surface; a polishing pad having a top pad surface, and a plurality of fluid delivery through-holes for introducing the fluid from the manifold system to the top pad surface; and a fluid distribution system, entrenched in the top pad surface and in communication with the through-holes, for substantially uniformly distributing the fluid about the top pad surface. The fluid distribution system includes a set of intersecting first grooves defining an array of lands, each of the first grooves having a first cross sectional area.

Abstract: A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. The current of a plating cell is provided from an azimuthally asymmetric anode, which is rotated with respect to the work piece (i.e., either or both of the work piece and the anode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece, whereby peripheral regions of the work piece see less current than central regions over the period of rotation. In some embodiments, the total current is distributed among a plurality of anodes in the plating cell in order to tailor the current distribution in the plating electrolyte over time. Focusing elements may be used to create “virtual anodes” in proximity to the plating surface of the work piece to further control the current distribution in the electrolyte during plating.

Abstract: A method of delivering a reagent to a wafer is provided. A solvent is provided. A set of conditions of temperature and pressure is provided to the solvent, which is sufficient to bring the solvent to supercritical conditions. A reagent is provided. A surfactant is provided, where the surfactant has a first moiety with an affinity for the solvent and a second moiety with an affinity for the reagent, where the surfactant increases the concentration of the reagent that may be carried by the solvent. The solvent, surfactant, and reagent are combined to form a solution. The solution is delivered to a supercritical process chamber, wherein a wafer is exposed to the solution in the process chamber.