Patents Assigned to NXP
  • Patent number: 9153529
    Abstract: Consistent with an example embodiment, a semiconductor device comprises a patterned conductive layer defining contact pads for being connected to terminals of a semiconductor chip. The semiconductor chip comprises the terminals at a first side and an adhesive layer at a second side opposite to the first side; wherein, the semiconductor chip is mounted with an adhesive layer on a patterned conductive layer such that the semiconductor chip part of each respective contact pad leaves part thereof uncovered by the chip for wire bonding. Wire bonds connect respective terminals of the semiconductor chip and respective contact pads at the first side thereof. A molding compound covers the semiconductor chip, the wire bonds and the contact pads; wherein, the molding compound is also located on the second side of the semiconductor device, separating the contact regions that are located directly on a backside of the contact pads.
    Type: Grant
    Filed: April 2, 2014
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventors: Jan van Kempen, René Wilhelmus Johannes Maria van den Boomen, Emiel de Bruin
  • Patent number: 9152902
    Abstract: To provide an identification document, particularly a passport, in which at least one contactless RFID chip (10) and an antenna (12) connected thereto are integrated on a page of the identification document, an additional layer (22) mechanically reinforcing the RFID chip is situated at the area of the RFID chip (10) on the page, thus providing an arrangement with which the RFID chip can withstand mechanical stress for years on end.
    Type: Grant
    Filed: August 30, 2005
    Date of Patent: October 6, 2015
    Assignee: NXP, B.V.
    Inventors: Volker Timm, Kim Nguyen
  • Patent number: 9154126
    Abstract: An output driver circuit is provided. In accordance with various example embodiments, an output driver circuit includes a high-side driver circuit having transistors coupled in anti-series between a power source and an output node, and a low-side driver circuit having transistors coupled in anti-series between the output node and ground. For each transistor, a diode is connected between the source and drain of the transistor, with the diodes of the respective high-side and low-side circuits being arranged to prevent/mitigate the flow of current in opposite directions.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventors: Pieter Gustaaf Nierop, Clemens Gerhardus Johannes de Haas, Luc Van Dijk
  • Patent number: 9154116
    Abstract: Various aspects are directed to providing an output/state based upon an input value. Consistent with one or more embodiments, an apparatus includes a bias circuit that is connected between power and common rails and includes first and second current paths that provide first and second reference currents. A current-mirroring circuit provides a first mirrored current in response to a voltage input transitioning in a first direction between voltage levels, and a second mirrored current in response to a voltage input transitioning in an opposite direction. A logic circuit operates in a first state based upon the first mirrored current and the first reference current, and operates in a second state based upon the second mirrored current and the second reference current.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventor: Clemens Gerhardus Johannes de Haas
  • Patent number: 9153958
    Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventors: Gijs de Raad, Paul Cappon, Albert Jan Huitsing
  • Patent number: 9154881
    Abstract: Systems and method for audio processing are disclosed. Left and right channels of an audio data stream are combined to derive sum and difference signals. A time domain to frequency domain converter is provided for converting the sum and difference signals to the frequency domain. a first processing unit is provided for deriving a frequency domain noise signal based at least partly on the frequency domain difference signal. A second processing unit is provided for processing the frequency domain sum signal using the noise signal thereby to reduce noise artifacts in the sum signal. A frequency domain to time domain converter is provided for converting at least the processed frequency domain sum signal to the time domain.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventors: Temujin Gautama, Alan Ocinneide
  • Patent number: 9154187
    Abstract: Systems and methods for operating a filter for echo cancellation are described. In one embodiment, a method for operating a filter for echo cancellation involves monitoring at least one of a filter coefficient of the filter and an echo cancellation error to generate a monitoring result and, in response to the monitoring result, adjusting at least one of delay elements and filter taps of the filter to vary an impulse response of the filter. Other embodiments are also described.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventors: Sujan Pandey, Frits Steenhof
  • Patent number: 9154875
    Abstract: A device (200) for processing an audio data stream, the device (200) comprising a transient detection unit (201) adapted to detect a transient portion of an audio input data stream (202), and a harmonics generator (203) adapted to generate an audio output data stream (204) based on the audio input data stream (202), the audio output data stream (204) comprising a sequence of harmonics (205) generated only from a non-transient portion of the audio input data stream (202).
    Type: Grant
    Filed: December 7, 2006
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventor: Kristof Van Reck
  • Patent number: 9154149
    Abstract: An input stage for an A/D converter includes a transconductance element adapted to receive, at a first input of the transconductance element, an analog input signal that is to be converted to a digital signal by the A/D converter, a feedback path for providing an analog feedback signal to a second input of the transconductance element, the analog feedback signal being based on a digital output signal of the A/D converter, and an integrator for integrating an output current of the transconductance element, wherein the integrating element is adapted to generate an integrator output signal representative of the integrated output current. The input stage may be included in an A/D converter. A plurality of such A/D converters may be included in a system.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: October 6, 2015
    Assignee: NXP B.V.
    Inventors: Robert Hendrikus Margaretha van Veldhoven, Fabio Sebastiano
  • Publication number: 20150280327
    Abstract: A device is described. The device includes a chip, a reflector, and an antenna. The reflector is disposed on a surface of the chip. The reflector is a metalized layer on the surface of the chip.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 1, 2015
    Applicant: NXP B.V.
    Inventor: Maristella Spella
  • Publication number: 20150278674
    Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure by applying an adhesive material to partially cover an overlapping area of the at least one antenna contact and the substrate, which is a component of a dual-interface IC card. Other embodiments are also described.
    Type: Application
    Filed: April 2, 2015
    Publication date: October 1, 2015
    Applicant: NXP B.V.
    Inventors: Patrick Schoengrundner, Ernst Eiper, Christian Zenz
  • Publication number: 20150278489
    Abstract: A method of binding a software to a device is disclosed. Accordingly, during a setup of the software in the device, a unique identifier is derived from contents stored in the device and the derived unique identifier is encrypted. The derived unique identifier is then stored in a configuration of the software. During a next invocation of the software in the device, a new unique identifier is derived from the contents stored in the device. The newly derived unique identifier is then matched with the stored unique identifier. The execution of the software is terminated if the matching fails.
    Type: Application
    Filed: March 27, 2014
    Publication date: October 1, 2015
    Applicant: NXP B.V.
    Inventors: Peter Maria Franciscus ROMBOUTS, Frank MICHAUD, Philippe TEUWEN
  • Publication number: 20150278673
    Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure, which is a component of a dual-interface IC card. Other embodiments are also described.
    Type: Application
    Filed: April 1, 2014
    Publication date: October 1, 2015
    Applicant: NXP B.V.
    Inventors: Christian Zenz, Tonny Kamphuis, Johannes Wilhelmus van Rijckevorsel, Bodin Kasemset, David Ceccarelli, Boudewijn van Blokland, Patrick Schoengrundner
  • Publication number: 20150279803
    Abstract: One example embodiment discloses a chip having a chip area, wherein the chip area includes: an overhang area; a rigid coupling area, having a set of rigid coupling points, located on one side of the overhang area; and a flexible coupling area, having a set of flexible coupling points, located on a side of the overhang area opposite to the a rigid coupling area. Another example embodiment discloses a method for fabricating a die interconnect, comprising: fabricating a rigid coupler area, having a set of rigid coupler points, within a chip having a chip area; defining an overhang area within the chip area and abutted to the rigid coupler area; and fabricating a flexible coupler area, having a set of flexible coupler points, within the chip area abutted to a side of the overhang area opposite to the rigid coupler area.
    Type: Application
    Filed: March 28, 2014
    Publication date: October 1, 2015
    Applicant: NXP B.V.
    Inventors: Leonardus Antonius Elisabeth van Gemert, Coenraad Cornelis Tak, Marten Oldsen, Hendrik Bouman
  • Patent number: 9147732
    Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: September 29, 2015
    Assignee: NXP B.V.
    Inventors: Johannes Theodorus Marinus Donkers, Stephan Heil, Romain Delhougne, Hans Broekman
  • Publication number: 20150270949
    Abstract: A method of performing a keyed cryptographic operation mapping an input message to an output message, wherein the cryptographic operation includes at least one round including a non-linear mapping function configured to map input data to output data, including: splitting the input data into n split input data, wherein the splitting of the input data varies based upon the value of the input message; inputting each split input data into the non-linear mapping function to obtain n split output data, wherein a combination the n split output data indicates an output data, wherein the output data results when the input data is input to the non-linear mapping function.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 24, 2015
    Applicant: NXP B.V.
    Inventor: Wil Michiels
  • Publication number: 20150270951
    Abstract: A method of performing a secure function on data inputs by a security module, including: receiving an encrypted data value by the security module; decrypting the encrypted data value using a white-box decryption block cipher and encoding the decrypted data value, wherein the data value is invisible to an attacker; performing a function on the encoded data value and producing an encoded result of the function, wherein the data value and the result are invisible to the attacker; decoding the encoded result of the programmed function and then encrypting the result using a white-box encryption block cipher, wherein the result is invisible to the attacker.
    Type: Application
    Filed: March 20, 2014
    Publication date: September 24, 2015
    Applicant: NXP B.V.
    Inventors: Wil Michiels, Jan Hoogerbrugge
  • Publication number: 20150270950
    Abstract: A method of performing a keyed cryptographic operation mapping an input message to an output message, wherein the input message comprises m input data and the output message comprises m output data and wherein the cryptographic operation includes at least one round and the cryptographic operation specifies a substitution box for mapping input data into output data, including: transforming each of the m input data into n output data using n split substitution boxes, wherein the n split substitution boxes sum to the specified substitution box; and mixing and combining the m×n output data.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 24, 2015
    Applicant: NXP B.V.
    Inventors: Wil Michiels, Jan Hoogerbrugge
  • Patent number: 9143158
    Abstract: A sigma-delta modulator (300) comprising a first filter stage (304); a second filter stage (306) in series with the first filter stage (304); a first feedback path (311) between the output of the second filter stage (306) and the input to the second filter stage (306), the first feedback (311) comprising a first gain stage (308, 308?) such that the first feedback path (311) is configured to provide a first gain value; and a second feedback path (313) between the output of the second filter stage (306) and the input to the first filter stage (304), the second feedback path (313) comprising a second gain stage (309; 310?) such that the second feedback path (313) is configured to provide a second gain value. The first gain value is different to the second gain value.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: September 22, 2015
    Assignee: NXP, B.V.
    Inventor: Lucien Johannes Breems
  • Patent number: 9140678
    Abstract: An integrated circuit arrangement (100) is disclosed comprising a substrate (210); and a gas such as a CO2 sensor comprising spatially separated electrodes including at least an excitation electrode (132) and a sensing electrode (142); a volume (120) in contact with said pair of electrodes, said volume including a chemical compound for forming a reaction product with said gas in an acid-base reaction; a signal generator (212) conductively coupled to the excitation electrode and adapted to provide the excitation electrode with a microwave signal; and a signal detector (214) conductively coupled to the sensing electrode and adapted to detect a change in said microwave signal caused by a permittivity change in said volume, said permittivity change being caused by said reaction product. A device comprising such an IC arrangement and a method of sensing the presence of a gas using such an IC arrangement are also disclosed.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: September 22, 2015
    Assignee: NXP, B.V.
    Inventors: Dimitri Soccol, Youri Victorovitch Ponomarev, David van Steenwinckel