Patents Assigned to OmniVision Technologies
  • Patent number: 8329497
    Abstract: A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: December 11, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Howard E. Rhodes, Hsin-Chih Tai, Vincent Venezia, Duli Mao
  • Patent number: 8330839
    Abstract: An image sensor for capturing a color image is disclosed having a two-dimensional array having first and second groups of pixels wherein pixels from the first group of pixels have narrower spectral photoresponses than pixels from the second group of pixels and wherein the first group of pixels has individual pixels that have spectral photoresponses that correspond to a set of at least two colors. Further, the placement of the first and second groups of pixels defines a pattern that has a minimal repeating unit including at least twelve pixels. The minimal repeating unit has a plurality of cells wherein each cell has at least two pixels representing a specific color selected from the first group of pixels and a plurality of pixels selected from the second group of pixels arranged to permit the reproduction of a captured color image under different lighting conditions.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: December 11, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: John T. Compton, John F. Hamilton, Jr.
  • Patent number: 8330195
    Abstract: An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: December 11, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Vincent Venezia, Ashish Shah, Rongsheng Yang, Duli Mao, Yin Qian, Hsin-Chih Tai, Howard E. Rhodes
  • Patent number: 8318580
    Abstract: An electrical component includes a semiconductor layer having a first conductivity type and a interconnect layer disposed adjacent to a frontside of the semiconductor layer. At least one bond pad is disposed in the interconnect layer and formed adjacent to the frontside of the semiconductor layer. An opening formed from the backside of the semiconductor layer and through the semiconductor layer exposes at least a portion of the bond pad. A first region having a second conductivity type extends from the backside of the semiconductor layer to the frontside of the semiconductor layer and surrounds the opening. The first region can abut a perimeter of the opening or alternatively, a second region having the first conductivity type can be disposed between the first region and a perimeter of the opening.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: November 27, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Cristian A. Tivarus
  • Patent number: 8319301
    Abstract: An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: November 27, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hsin-Chih Tai, Duli Mao, Vincent Venezia, WeiDong Qian, Ashish Shah, Howard E. Rhodes
  • Patent number: 8318529
    Abstract: A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: November 27, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes
  • Patent number: 8314866
    Abstract: A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a color filter optically aligned with the photosensitive element to filter incident light prior to reaching the photosensitive element. The micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: November 20, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventor: Dominic Massetti
  • Patent number: 8314869
    Abstract: An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: November 20, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wei Zheng, Hsin-Chih Tai, Yin Qian, Hongjun Li, Howard E. Rhodes
  • Patent number: 8306362
    Abstract: A method for reading out pixel values for a two dimensional array, the method includes the steps of periodically combining at least two pixel values of a same first color in a first dimension of the two dimensional array; reading out the combined pixel values of the first color; and reading out pixels of a second color in the first dimension of the two dimensional array.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: November 6, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventor: John T. Compton
  • Patent number: 8299513
    Abstract: An image sensor includes a photosensitive element, a reset circuit, an amplifier transistor, and a current source. The photosensitive element is coupled to generate an image charge in response to incident light and transfer the image charge to a circuit node. The reset circuit is coupled to selectively reset a voltage at the circuit node. The amplifier transistor includes a gate terminal responsive to the voltage at the circuit node. A current source is coupled between a high level power rail and a second terminal of the amplifier transistor.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: October 30, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventor: Tiejun Dai
  • Patent number: 8293629
    Abstract: Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: October 23, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes
  • Patent number: 8294187
    Abstract: An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one photosensitive region and convening the charge to a voltage; an amplifier transistor having a source connected to an output node, having a gate connected to the charge-to-voltage conversion node and having a drain connected to at least a portion of a power supply node; and a reset transistor connecting the output node and the charge-to-voltage conversion node.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: October 23, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventor: Christopher Parks
  • Patent number: 8294077
    Abstract: An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: October 23, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Howard E. Rhodes, Sohei Manabe
  • Patent number: 8289634
    Abstract: An image capture lens module includes a first compound lens with a first lens element, a second lens element, and a third lens element arranged in sequence from an object side to an image side. A second compound lens includes a fourth lens element, a fourth lens element, and a fifth lens element arranged in sequence from an object side to an image side. A cover glass for an image sensor is positioned behind the second compound lens, wherein the first compound lens, the second compound lens and the cover glass are arranged in sequence from an object side to an image side.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: October 16, 2012
    Assignees: Omnivision Technologies, Inc., Visera Technologies Company Limited
    Inventors: Jau-Jan Deng, Yun-Chiang Hsu
  • Patent number: 8279535
    Abstract: Image capture lens modules and image capture systems are presented. An image capture lens module includes a first compound lens with a first lens element, a second lens element, and a third lens element arranged in sequence from an object side to an image side. A second compound lens includes a fourth lens element, a fourth lens element, and a fifth lens element arranged in sequence from an object side to an image side. A curvature radius of the first lens element is positive, a curvature radius of the third lens element is negative, a curvature radius of the fourth lens element is negative, and a curvature radius of the sixth lens element is negative. An abbe number of the first lens element exceeds 55 and an abbe number of the third lens element is less than 30.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: October 2, 2012
    Assignees: Omnivision Technologies, Inc., VisEra Technologies Company Limited
    Inventors: Yun-Chiang Hsu, Jau-Jan Deng
  • Patent number: 8278690
    Abstract: A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: October 2, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes
  • Patent number: 8274101
    Abstract: An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: September 25, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Vincent Venezia, Duli Mao, Hsin-Chih Tai, Yin Qian, Howard E. Rhodes
  • Patent number: 8274715
    Abstract: A method for forming a final digital color image includes capturing an image using an image sensor having panchromatic pixels and color pixels corresponding to at least two color photoresponses; providing from the captured image a digital panchromatic image and an intermediate digital color image; and using the digital panchromatic image and the intermediate digital color image to provide the final digital color image.
    Type: Grant
    Filed: July 28, 2005
    Date of Patent: September 25, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: John F. Hamilton, Jr., John T. Compton
  • Patent number: 8269864
    Abstract: An image sensor includes multiple photoactive pixels and multiple dark reference pixels arranged in rows and columns to form a pixel array. A dark signal is read out of one or more dark reference pixels in each column and used to determine a column offset for one or more columns in the pixel array. An offset window is used for each column in the pixel array to define an acceptable maximum dark signal and an acceptable minimum dark signal for each column. The dark signals from each column are analyzed to determine if there are any dark signals outside the offset window. If any of the dark signals are outside the offset window, the dark signal or signals can be compensated for or discarded.
    Type: Grant
    Filed: December 31, 2009
    Date of Patent: September 18, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeffrey S. Gerstenberger, Ravi Mruthyunjaya, David W. Bishop
  • Patent number: 8269264
    Abstract: An image sensor having an array of pixels disposed in a substrate. Each pixel includes a photosensitive element, a color filter, and waveguide walls. The waveguide walls are disposed in the color filter and surround portions of the color filter to form waveguides through the color filter. The refractive index of the waveguide walls is less than the refractive index of the color filter. The image sensor may be back side illuminated (BSI) or front side illuminated (FSI). In some embodiments, metal walls may be coupled to the waveguide walls.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: September 18, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hidetoshi Nozaki, Fei Wu