Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: An adjustable LED display module is provided, including a plurality of light-emitting units, and at least a set of spacing adjusting mechanism. The spacing adjusting mechanism is of a retractable grid-like structure or a retractable mesh-structure. The plural light-emitting units are distributed on different locations of the components of the spacing adjusting mechanism. When the spacing adjusting mechanism operates to adjust the spacing, at least spacing between some neighboring light-emitting units will change so that the location after adjustment will vary. Hence, the display module will have different form factor and light dots arrangement to provide higher flexibility for various application environments and conditions as well as convenience for storage and transportation when contracted.

Abstract: A light-emitting diode (LED) lamp and a polygonal heat-dissipation structure thereof are provided. The LED lamp includes a polygonal heat-dissipation unit and a lighting module. The polygonal heat-dissipation unit has a polygonal hollow column and fins. The fins and the lighting module are thermally disposed on an inner surface and an outer surface of the polygonal hollow column, respectively. Thus, heat generated by the lighting module is dissipated by the fins rapidly. As the fins are thermally disposed on the inner surface of the polygon hollow column instead of being exposed, the volume of the LED lamp can be minimized, and the look of the LED lamp also can be prettified.

Abstract: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Abstract: A light emitting diode includes a permanent substrate having a first portion and a second portion, and a chip attached on the first portion of the permanent substrate by a chip bonding technology. The chip includes at least one first electrode and a light emitting region. The manufacturing method comprises a step of mounting a single chip on the first portion of the permanent substrate by a chip bonding technology to overcome the fragility problem of an EPI-wafer.

Abstract: According to the method, a trench structure is formed in a substrate. LED arrays and driver ICs are located in the corresponding trenches. An insulating layer is formed over the substrate, the LED arrays and the driver ICs. A photolithography process forms an electrical connection structure between the LED arrays and the driver ICs. Then, a die-cutting process cuts out individual units. These units are fixed in a PCB and an electrical connection structure is formed between these units and input/output pins on the PCB.

Abstract: A lighting system capable of adjusting color temperature is provided. The lighting system mainly comprises a light source module and a mixing assembly. The light source module produces red-color, blue-color, and green-color lights so as to control the color temperature of a white light resulted from mixing the color lights. The mixing assembly is located at a side of the light source module and comprises a first, a second, and a third mixing device sequentially arranged along the light transmission path. The function of the first and third mixing devices is for light mixing by causing the lights to undergo multiple internal reflections. The second mixing device directs the lights passing through the first mixing device in a reverse direction (180 degrees) and enters into the third mixing device.

Abstract: An organic electroluminescent device with the feature of three-wavelength luminescence is provided. The device includes a hole transporting layer, an electron blocking layer, a first host material layer, a second host material layer, a hole blocking layer, and an electron transporting layer placed between an anode and a cathode in turn. In which, the first host material layer has a first guest luminous substance mixed therein for projecting a first color light source (B), while the second host material layer correspondingly has a second guest luminous substance and a third guest luminous substance mixed therein for projecting a second color light source (G) and a third color light source (R), respectively, under the effect of an external bias voltage, wherein said second guest luminous substance or said third guest luminous substance may be a phosphorescence substance.

Abstract: The present invention discloses a light-emitting diode and a method for manufacturing such a light-emitting diode with a direct band-gap III-V compound semiconductor material on a GaAs substrate. It is implemented by forming a first conductive electrode on the top edge of the epitaxial LED layer and a second conductive electrode opposite the first conductive electrode on the edge of a transparent substrate. Further, after the first conductive electrode and second conductive electrode are connected by chip bonding skill, it is selectively to remove the GaAs substrate and plate a transparent electrode on the top portion of the epitaxial LED layer. Therefore, when casting from P-N junction of the light-emitting diode, the light will go through with directions of the top portion of epitaxial layer and transparent substrate.

Abstract: An organic electro-luminescent (EL) device is provided. The present invention discloses that the number of moisture-absorbing channels is increased to prevent the generation of dark spots and to improve the luminescence quality of the organic EL device. The organic electro-luminescent (EL) device comprises: a substrate; at least a bottom electrode, formed on the substrate, a plurality of isolation ribs for moisture-absorption and insulation, formed on a surface of the bottom electrode, intersecting the bottom electrode, wherein regions between every two of the isolation ribs are pre-determined light-emitting regions; at least an organic layer comprising an organic electro-luminescent layer, formed on a surface of the bottom electrode in the pre-determined light-emitting region; and at least an opposed electrode, formed on a surface of the organic layer.

Abstract: A white light emitting organic electro-luminescent (EL) device and a method for fabricating the same are provided. The device comprises: a substrate; a bottom electrode formed on a top surface of the substrate; at least an organic layer comprising an organic emitting layer formed on a surface of the bottom electrode to emit a first-color light; at least a transparent opposed electrode formed on a surface of the organic layer; and a sealing cap layer covering the organic layer and the transparent opposed electrode, wherein a color conversion layer is disposed on an inner surface of the sealing cap layer for converting a percentage of the first-color light into a second-color light and a third-color light. Therefore, a white light source is achieved by mixing the three primary colors.