Abstract: A light emitting diode package structure includes an insulating carrier base formed with a recess or a through hole. The recess or the through hole has a depth enough for completely accommodating a light emitting diode. The recess or the through hole may have two stepwise portions for providing two intermediate mesa planes. Two planar metal layers are separately formed on the two intermediate mesa planes and, respectively, connected to two metal pads which are arranged outside of the recess or the through hole. Two wiring lines connect two electrodes of the light emitting diode with the two planar metal layers, respectively. A resin fills the recess or the through hole for sealing all of the light emitting diode and the two wiring lines.

Abstract: The present invention relates to a temperature measurement device, particularly to a temperature measurement device for the cold junction of a non-contact temperature measurement element, characterized in that a plurality of electrical-conductive pins is provided on the bottom surface of a base.

Abstract: The present invention discloses a light-emitting diode with enhanced light-emitting efficiency, in which the active current is prevented from flowing in the region under the top electrode so that the light-emitting efficiency as well as the brightness can be improved.

Abstract: The present invention discloses an electroluminescent device with a drying film and a method for fabricating the same. The present invention is characterized in that the method comprises: providing a substrate; forming, in sequence from substrate up, a transparent electrode, a luminescent layer, and an opposed electrode; and forming a drying film by providing a raw material composed of barium (Ba), magnesium (Mg) or calcium (Ca) to react with a gaseous reactant composed of oxygen on the surface of the opposed electrode. The drying film composed of barium oxide (BaO), magnesium oxide (MgO) or calcium oxide (CaO) can be employed to absorb the moisture. Therefore, the generation of dark spots can be prevented and the reliability of the device can be improved.

Abstract: The present invention discloses a white light emitting organic electroluminescent (EL) device and a method for fabricating the same. The device comprises: a substrate; an anode formed on the substrate; at least one hole transporting layer formed on the anode; at least one luminescent layer (DPVBi) formed on the hole transporting layer, wherein a first dopant (DCM2) is doped into the luminescent layer; at least one electron transporting layer formed on the luminescent layer, wherein a second dopant (C6) is doped into the electron transporting layer; and a cathode formed on the electron transporting layer; wherein a first light (red) is emitted by the first dopant, a second light (green) is emitted by the second dopant, and a third light (blue) is emitted by the luminescent layer when the device is applied with a bias voltage.

Abstract: A forming method and a structure of a high efficiency electro-optics device are disclosed. In the present invention, the cell-fixing surface between the die carrier and the electro-optics cell is decreased to increase the light emitting and absorbing regions of the electro-optics device. Thus, the operating efficiency and the sensitivity of the electro-optics device is increased substantially. Especially, the present invention has the advantage of fully showing the efficacy of device using the transparent substrate. Furthermore, when the electro-optics cell is fixing on the cell-fixing surface by utilizing the eutectic or metal-melting bonding method, a result of self-alignment can be achieved. Thus, the accuracy of the packaging device is increased substantially, thereby reducing the loss caused by the failure of poor cell-fixing while in mass production and meanwhile increasing the accuracy of fixing cell. Therefore, the present technology is quite suitable for use in the packaging of high precision.

Abstract: A white light emitting organic electro-luminescent (EL) device and a method for fabricating the same are provided. The device comprises: a substrate; a bottom electrode formed on a top surface of the substrate; at least an organic layer comprising an organic emitting layer formed on a surface of the bottom electrode to emit a first-color light; at least a transparent opposed electrode formed on a surface of the organic layer; and a sealing cap layer covering the organic layer and the transparent opposed electrode, wherein a color conversion layer is disposed on an inner surface of the sealing cap layer for converting a percentage of the first-color light into a second-color light and a third-color light. Therefore, a white light source is achieved by mixing the three primary colors.

Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

Abstract: A method for packaging an electro-optics device is disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Abstract: A light emitting element array module includes a board; a silicon base having a first side, a second side opposite to the first side and adhered to the board, a third side having a first angle with the second side, a fourth side substantially in parallel with the first side and having a second angle with the third side, and a fifth side having a third angle with the fourth side; a chip having a first main surface formed with at least one light emitting element array and at least one pad array, and a second main surface adhered to the board; a driving device adhered to the first side of the silicon base; and a plurality of metal wires for connecting the pad array to the driving device.

Abstract: A method and a structure for packaging an electro-optics device are disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Abstract: A charging/discharging circuit comprises a PNP transistor controlled by a diode, an NPN transistor arranged on a discharging path and controlled by at least one photodiode, and a capacitor arranged between a photodiode and the NPN transistor. During charging stage, a charging current flows through the diode to produce a voltage drop, which cuts off the transistors to prevent leakage current. The photodiode generates a photo current such that the capacitor presents a negative voltage on one contact thereof, which facilitates the discharging process.

Abstract: A method for packaging an electro-optics device is disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Abstract: The invention provides a method for manufacturing a gallium nitride-based III-V group compound semiconductor device, which comprises the following steps: forming a semiconductor stacked structure over a substrate, wherein the semiconductor stacked structure comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; etching the semiconductor stacked structure to expose a part of the n-type semiconductor layer; forming a first electrode on the n-type semiconductor layer, wherein the first electrode comprises an ohmic contact layer, a barrier layer, and a pad layer; performing an annealing process to lower the contact resistance between the first electrode and the n-type semiconductor layer and activate the p-type semiconductor layer at the same time; and forming a second electrode on the p-type semiconductor layer.

Abstract: A method for manufacturing III-nitride semiconductor devices is disclosed. The method employs oxidation and sulfurated treatment to reduce the specific contact resistance between metal and p-type III-nitride semiconductors. The method includes surface treatment of p-type III-nitride semiconductors using (NH4)2Sx solution to remove the native oxide from their surface; evaporating metal layer onto the surface-treated p-type III-nitride semiconductors; and then alloy processing the metals and the p-type III-nitride semiconductor with thermal alloy treatment. The method may further include a pre-oxidation step prior to the sulfurated treatment. In this way, ohmic contact can be formed between the metal layer and the p-type III-nitride semiconductors.

Abstract: A light emitting diode (LED) includes a heat dissipation structure characterized by having a heat dissipating fluidic coolant filled in a hermetically sealed housing where at least one LED chip mounted on a metallic substrate is dwelled inside. The heat dissipation structure is configured with a metallic wall erected from the metallic substrate, which is used to hold a transparent cap of the sealed housing in correct position. Furthermore, the erected wall surrounds in proximity with the at least one LED chip, so that the joule heat generated therefrom can be quickly spread out, through the heat dissipating fluidic coolant, to the erected wall, and then diffused along the wall down to the metallic substrate which adjoins with a larger external heat sink for draining the heat, thus preventing the at least one LED from overheating.

Abstract: A method and a structure for packaging an electro-optics device are disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Abstract: A forming method and a structure of a high efficiency electro-optics device are disclosed. In the present invention, the cell-fixing surface between the die carrier and the electro-optics cell is decreased to increase the light emitting and absorbing regions of the electro-optics device. Thus, the operating efficiency and the sensitivity of the electro-optics device is increased substantially. Especially, the present invention has the advantage of fully showing the efficacy of device using the transparent substrate. Furthermore, when the electro-optics cell is fixing on the cell-fixing surface by utilizing the eutectic or metal-melting bonding method, a result of self-alignment can be achieved. Thus, the accuracy of the packaging device is increased substantially, thereby reducing the loss caused by the failure of poor cell-fixing while in mass production and meanwhile increasing the accuracy of fixing cell. Therefore, the present technology is quite suitable for use in the packaging of high precision.

Abstract: A photo sensing device uses surface-emitting LED as light emitter to increase responsive of light receiver and prevent the short circuit of connection wires, and the manufacturing method thereof. The light emitter is directly mounted on top front surface of an encapsulating epoxy enclosing a light receiver. The light emitted from backside of the light emitter passes through the encapsulating epoxy and is directly absorbed by the light receiver. The response is enhanced as compared with prior art.

Abstract: A method for forming thermal isolation for a micro thermopile device comprises steps of forming a narrow etching window on the membrane and forming a plurality of micro connection structures each crossing the narrow etching window and connecting the edge portion of the membrane on both sides of the narrow etching window, and etching the silicon substrate through the narrow etching window to form a pit between the silicon substrate and the membrane, whereby the membrane becomes a floating membrane and has thermal isolation with the silicon substrate. By this method, the area of the floating membrane is increased and the strain of the floating membrane is reduced.