Abstract: A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.

Abstract: A micro-light-emitting diode (microLED) display panel includes a display area divided into a plurality of blocks; a plurality of drivers that drive microLEDs of the blocks respectively; and at least one timing controller that controls the drivers. In each block, anodes of microLEDs in a same row are connected to a corresponding data line, and cathodes of microLEDs in a same column are connected to a corresponding common line.

Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

Abstract: A micro-light-emitting diode (microLED) display panel includes a timing controller, and a plurality of drivers controlled by the timing controller and arranged in an order according to distance from the timing controller. Each driver includes a buffer that buffers a signal before being sent to a succeeding driver.

Abstract: A deep ultraviolet (DUV) light-emitting diode (LED) module structure contains: a holder configured to accommodate a substrate. The holder including a receiving cup mounted therein and a transparent layer mounted on a top of the receiving cup. The holder includes a DUV LED chip adhered on the substrate, and the holder, the substrate, and the DUV LED chip are connected and packaged. The substrate is electrically connected with a drive circuit, and the drive circuit is configured to turn on/off the DUV LED chip. Thereby, the DUV LED module structure enhances DUV radiation intensity, reduces a loss of optical path, and slows down deterioration because of DUV irradiation.

Abstract: A microLED display includes a first main substrate, microLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.

Abstract: An image-sensing device is provided. The image-sensing device includes a substrate, a light-sensing element, a first dielectric layer, a light-guiding structure, and a patterned conductive layer. The light-sensing element is disposed in the substrate. The first dielectric layer is disposed on the first side of the substrate. The light-guiding structure is disposed in the first dielectric layer. The patterned conductive layer is disposed between the light-sensing element and the light-guiding structure. In addition, the patterned conductive layer includes a subwavelength structure. An image-sensing system including the above image-sensing device is also provided.

Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

Abstract: A display system includes a display panel that includes a plurality of micro-light-emitting diodes (microLEDs), the display panel being divided into a plurality of display blocks; and a plurality of drivers correspondingly driving the plurality of display blocks. Data signals of each driver are provided to a corresponding display block at different times within a horizontal scan period.

Abstract: An image-sensing system for the efficient detection of defective pixels is shown. An arithmetic logic unit (ALU) determines a defective pixel candidate of an image sensor based on the first frame captured by the image sensor, performs a lower-part comparison on the defective pixel candidate based on the first frame, and performs an upper-part comparison on the defective pixel candidate based on the second frame captured by the image sensor. The defective pixel candidate is confirmed to be defective based on the first frame as well as the second frame. Only limited pixel data is buffered for the defective pixel detection.

Abstract: A light-emitting diode display is provided. The light-emitting diode display includes a substrate, a plurality of wires, a plurality of light-emitting areas, and at least one driver IC. The plurality of wires are formed on the substrate. The plurality of light-emitting areas include a light-emitting diode area and a virtual area. The plurality of light-emitting areas are arranged in a matrix. The virtual area of the plurality of light-emitting areas corresponds to each other. The driver IC is formed on the virtual area of the plurality of the light-emitting areas or on the plurality of the light-emitting areas.

Abstract: An image sensing device is provided. The image sensing device includes a substrate, a plurality of photosensitive elements, a dielectric layer, a reflector, a color filter, and a microlens structure. The substrate has a first pixel and a second pixel adjacent to the first pixel, and the substrate has a front side and a back side opposite the front side. The photosensitive elements are disposed in the substrate. The dielectric layer is disposed on the back side of the substrate. The reflection is disposed on the front side of the substrate and has a parabolic surface. The color filter layer is disposed on the dielectric layer. The microlens structure is disposed on the color filter layer.

Abstract: A proximity sensor which uses very narrow divergent beams from Vertical Cavity Surface Emitting Laser (VCSEL) for the illumination source is disclosed. Narrow divergent beams in the range 0.5 to 10 degrees can be achieved to provide high proximity sensing accuracy in a small footprint assembly. One approach to reducing the beam divergence is to increase the length of the VCSEL resonant cavity using external third mirror. A second embodiment extends the length of the VCSEL cavity by modifying the DBR mirrors and the gain region. Optical microlenses can be coupled with the VCSEL to collimate the output beam and reduce the beam divergence. These can be separate optical elements or integrated with the VCEL by modifying the substrate output surface profile or an added a transparent layer. These methods of beam divergence reduction are incorporated into various embodiment configurations to produce a miniature proximity sensor suitable for cell phones and tablets.

Abstract: A bottom emission microLED display includes a microLED disposed above a transparent substrate; a light guiding layer surrounding the microLED to controllably guide light generated by the microLED towards the transparent substrate; and a reflecting layer formed over the light guiding layer to reflect the light generated by the microLED downwards and to confine the light generated by the microLED to prevent the light from leaking upwards or sidewards.

Abstract: A method for black-level calibration for an image-sensing device is provided. The image-sensing device includes a pixel array that has a first non-light-sensing region, a second non-light-sensing region, and an image-pixel region. The method includes the following steps: receiving a first analog signal, a second analog signal, and a third analog signal respectively from the first non-light-sensing region, the second non-light-sensing region, and the image-pixel region every predetermined scanning period; utilizing an analog-to-digital converter (ADC) of the image-sensing device to convert the first analog signal, the second analog signal, and the third analog signal to a first digital signal, a second digital signal, and a third digital signal, respectively; and performing a black-level-calibration (BLC) process on the first digital signal, the second digital signal, and the third digital signal to generate a black-level-calibrated digital signal, wherein the BLC process is implemented using a Kalman filter.

Abstract: A miniature illuminator is described which is suitable for assembly into mobile electronics devices such as cell phones and computer tablets. Features of the invention overcome the complexity of current miniature illuminators by using single molded structure which includes all the electrical feedthrough connections and has the features necessary for accurate mounting of optical components. The molded structure includes laser safety connections which provide an electrical interrupt signal when the illuminator is damaged in a way that could result in propagation of non-eye safe illuminator beams. In an alternate operation the illuminator provides a signal when a subject gets too close to the illuminator and would receive unsafe VCSEL illuminator beam. The laser safety feature is integrated into the molded Illuminator package so that separate electrically connected structures to achieve this function are eliminated.

Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.

Abstract: A VCSEL illuminator package includes one or more VCSELs in a substrate. The one or more VCSELs are operable to generate a VCSEL output radiation beam. An encapsulant covers the one or more VCSELs, and an optical structure is integrated in the encapsulant. The optical structure is disposed in a path of the VCSEL output radiation beam and is operable to change at least one of a propagation characteristic or intensity distribution of the VCSEL output radiation beam exiting the encapsulant.

Abstract: A bonding method of a semiconductor device is disclosed. The method includes steps of forming a plurality of holes on two bonding parts of a main substrate, respectively; disposing a semiconductor device on the main substrate, and aligning the two bonding parts with two conduction parts of the semiconductor device; aligning a laser to the conduction parts and operating the laser to emit a laser beam from a lower part of the main substrate, wherein the laser beam passes through the holes of the bonding part to strike on the conduction part, so as to melt each conduction part to bond with the bonding part. With configuration of the holes, the conduction parts and the bonding part can be smoothly bonded by using laser, so as to achieve the purpose of transferring the semiconductor device.