Abstract: An imaging lens assembly includes, in order from an object side to an image side, a first lens element with positive refractive power, a second lens element with negative refractive power, a third lens element with positive refractive power. The first lens element has a convex image-side surface in a paraxial region. The second lens element has a concave object-side surface and a convex image-side surface in a paraxial region, and at least one of its surfaces is aspheric. The object-side surface of the third lens element is convex in a paraxial region and concave in a peripheral region. The image-side surface of the third lens element is concave in a paraxial region. The object-side surface and image-side surface of the third lens element are both aspheric. The imaging lens assembly satisfies 0.062 mm<D<0.091 mm, where D represents the maximum effective focus shifts range under all the defocus curves at 0.4 modulus of the OTF (optical transfer function).

Abstract: A set of VCSEL fabrication methods has been invented which enhance the performance and long time reliability of VCSEL devices and arrays of devices. Wafer bow caused by growing a large number of epitaxial layers required to fabricate VCSEL device generates strain and results in bowing/warping of the device wafer. The stress so generated is eliminated by applying a stress compensation layer on the substrate to a surface opposite to the epitaxial layer surface. New oxidation equipment designs and process parameters are described which produce more precision apertures and reduce stress in the VCSEL device. An ultrathin fabrication procedure is described which enables high power VCSELs to be made for high power operation at many different wavelengths. A low temperature electrical contacting process improves VCSEL long term reliability.

Abstract: A high efficiency optical ignition device is provided in a two-part compact and robust package to be mounted directly on an internal combustion engine chamber. The ignition device ignites a combustion fuel with a high intensity plasma generated by a high power laser beam from a solid state laser operable in Q-switched, or non-Q-switched mode for producing short or long pulses, respectively. Multiple pulses are generated, and duration and frequency of the laser beam pulses are controlled by controlling an optical pump module to pump the solid state laser. The optical pump module comprises a semiconductor laser, preferably a VCSEL device. One or more laser beams are precisely directed, each one to a desired location anywhere within the combustion chamber for more efficient and near complete burning of the combustion fuel. The robust packaging is well suited to withstand mechanical and thermal stresses of the internal combustion engine.

Abstract: The present invention provides an image-correction system, including an image-capture module, a first calculation module, a second calculation module and an output module. The image-capture module obtains an input image and a guide image. The first calculation module obtains a first correction image according to a first parameter and a second parameter, obtains the first parameter according to the mean value of the guide image, a variance value of the guide image, a mean value of the input image and a smooth function, and obtains the second parameter according to the first parameter, the mean value of the guide image and the mean value of the input image. The second calculation module obtains the ratio value of the mean value of the guide image and the variance value of the guide image. The output module outputs the first correction image.

Abstract: A miniature structured light illuminator is provided. The miniature structured light illuminator uses a semiconductor surface emitting array including VCSEL or RC-LED array and an array of microlens elements to generate a wide range of structured light illumination patterns. The emission beam from a surface emitter array may be selectively directed, steered, focused or expanded, by applying a lateral displacement of the microlens array, such that centers of the emission beam and microlens array are misaligned. Emitted beams may be directed through small optical components to project the structured light pattern to a distant plane. The surface emitting arrays may be configured in addressable form to be activated separately for continuous or pulsed operation with very fast pulses having <100 ps risetime. A compact structured light illuminator module with projection optics is provided in very small physical size (˜6×6×3 mm3) suitable to configure in a handheld device.

Abstract: The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate located at one side of the channel, a voltage transfer region formed in the substrate located at the other side of the channel, a first gate dielectric layer formed on the substrate, a second gate dielectric layer formed on the substrate, wherein the first gate dielectric layer and the second gate dielectric layer have a joint above the channel, and the thickness of the first gate dielectric layer is thicker than that of the second gate dielectric layer, and a gate formed on the first gate dielectric layer and the second gate a is dielectric layer. The present invention also provides a method for fabricating the image sensor device.

Abstract: An image sensor is provided. The image sensor includes a pixel array, an analog-to-digital converter, and a processor. The analog-to-digital converter converts a black level reference signal and a pix signal from the pixel array into a first digital signal and a second digital signal, respectively. The processor obtains a black level reference value according to the first digital signal, and obtains a compensation coefficient according to the black level reference value, a maximum digital level of the analog-to-digital converter and a full signal range value. The processor obtains pix data according to the compensation coefficient, the black level reference value and the second digital signal.

Abstract: A structured light source comprising VCSEL arrays is configured in many different ways to project a structured illumination pattern into a region for 3 dimensional imaging and gesture recognition applications. One aspect of the invention describes methods to construct densely and ultra-densely packed VCSEL arrays with to produce high resolution structured illumination pattern. VCSEL arrays configured in many different regular and non-regular arrays together with techniques for producing addressable structured light source are extremely suited for generating structured illumination patterns in a programmed manner to combine steady state and time-dependent detection and imaging for better accuracy. Structured illumination patterns can be generated in customized shapes by incorporating differently shaped current confining apertures in VCSEL devices.

Abstract: An apparatus and a method are provided for 3-D imaging and scanning using a 2-D planar VCSELs source configured as a lightfiled optical source. VCSELs are configured in different 2-D spatial arrangements including single VCSEL, or preferably a group, cluster, or array each to be operated effectively as an independent VCSEL array source. A set of microlens and an imaging lens positioned at a pre-determined distance collimates radiation from each VCSEL array source to a set of parallel beams. The parallel beams from different VCSEL array sources generated in a rapid pre-determined timing sequence provide scanning beams to illuminate an object. The radiation reflected from the object is analyzed for arrival time, pulse shape, and intensity to determine a comprehensive set of distance and intensity profile of the object to compute a 3-D image.

Abstract: An apparatus and a method are provided for 3-D imaging and scanning using a 2-D planar VCSELs source configured as a lightfiled optical source. VCSELs are configured in different 2-D spatial arrangements including single VCSEL, or preferably a group, cluster, or array each to be operated effectively as an independent VCSEL array source. A set of microlens and an imaging lens positioned at a pre-determined distance collimates radiation from each VCSEL array source to a set of parallel beams. The parallel beams from different VCSEL array sources generated in a rapid pre-determined timing sequence provide scanning beams to illuminate an object. The radiation reflected from the object is analyzed for arrival time, pulse shape, and intensity to determine a comprehensive set of distance and intensity profile of the object to compute a 3-D image.

Abstract: A new VCSEL design is presented to achieve high output power and high brightness with a strong selection of a linear polarization state in high speed pulsing operation. Higher output power is achieved by including multiple gain segments in tandem, in the gain region. To achieve single mode operation with high output power, an extended cavity three reflector design is presented. High degree of polarization selectivity is achieved by a linear grating deployed with the third reflector, such that lasing is allowed only in a preferred linear polarization state. A polarization selective reflector including a linear grating is designed to impart strong polarization selectivity for a preferred linear polarization state. The polarization selective reflector used as the third reflector in an extended cavity VCSEL device, exhibits strong polarization selection for a preferred linear polarization state during high speed pulsing including in the gain switching resonance regime.

Abstract: A method for manufacturing a transfer gate transistor of an image sensor device is disclosed. The transistor includes a substrate, a gate oxide layer on the substrate and a gate electrode portion on the gate oxide layer. The gate electrode portion has a trench or an insulating layer used for accurately defining a first region and a second region in the gate electrode portion, wherein the first region has a first conductivity type, and the second region has a second conductivity type or is an undoped region.

Abstract: An apparatus and a method are provided for 3-D proximity sensing, imaging and scanning using a 2-D planar VCSEL array source using reflected radiation from an object being detected. An important aspect of the apparatus is a compact high power optical source and in particular, an optical source comprising a plurality of VCSELs to illuminate the object. VCSELs in the optical source are configured in different 2-D planar arrangements, such that the optical source may be used in many different modes to adapt to different sensing, imaging and scanning requirement suited for different environments including one where shape, size and illumination mode require to be altered dynamically. When used in different modes of operation the apparatus provides a comprehensive set of measured distance and intensity profile of the object to compute a 3-D image.

Abstract: A set of VCSEL fabrication methods has been invented which enhance the performance and long time reliability of VCSEL devices and arrays of devices. Wafer bow caused by growing a large number of epitaxial layers required to fabricate VCSEL device generates strain and results in bowing/warping of the device wafer. The stress so generated is eliminated by applying a stress compensation layer on the substrate to a surface opposite to the epitaxial layer surface. New oxidation equipment designs and process parameters are described which produce more precision apertures and reduce stress in the VCSEL device. An ultrathin fabrication procedure is described which enables high power VCSELs to be made for high power operation at many different wavelengths. A low temperature electrical contacting process improves VCSEL long term reliability.

Abstract: The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate adjacent to one side of the channel, a voltage transfer region formed in the substrate adjacent to the other side of the channel, wherein the doping concentration of the channel is decreased from the side adjacent to the photoelectric transfer region to the other side adjacent to the voltage transfer region of the channel, a gate dielectric layer formed on the substrate, and a gate formed on the gate dielectric layer. The present invention also provides a method for fabricating the image sensor device.

Abstract: The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate located at one side of the channel, a voltage transfer region formed in the substrate located at the other side of the channel, a first gate dielectric layer formed on the substrate, a second gate dielectric layer formed on the substrate, wherein the first gate dielectric layer and the second gate dielectric layer have a joint above the channel, and the thickness of the first gate dielectric layer is thicker than that of the second gate dielectric layer, and a gate formed on the first gate dielectric layer and the second gate a is dielectric layer. The present invention also provides a method for fabricating the image sensor device.

Abstract: A sensing device may include a cholesteric crystal device including two optically transparent substrates; a liquid crystal having portions adapted for producing a plurality of optical states, said liquid crystal being arranged between the two optically transparent substrates; an optical sensor for changing optical states of respective portions of said liquid crystal to produce a range of respective optical states including all optical states produced by said liquid crystal ranging from one state to any combination of broadband reflection, tunable narrow band reflection, light scattering, and transparency in accordance with an amount of voltage applied across said cholesteric crystal device for changing optical states.

Abstract: A process to bond VCSEL arrays to submounts and printed circuit boards is provided. The process is particularly suited to large area thin and ultra-thin VCSEL arrays susceptible to bending and warping. The process integrates a flatness measurement step and applying appropriate combination of pressure prior to bonding the VCSEL array to the submount or a printed circuit using a vacuum flux-less bonding process. The process is very promising in making very good quality bonding between the VCSEL array and a submount or a printed circuit board. The process is applied to construct optical modules with improved flatness that may be integrated with other electronic components in constructing optoelectronic systems.

Abstract: An active pixel sensor comprising: a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, and the plurality of pixels have at least one floating diffusion region; and a plurality of processing circuits associated with the plurality of pixels; wherein each processing circuit comprises a charge amplifier.

Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels. Each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, and a reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of the reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die.