Abstract: The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range.

Abstract: A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.

Abstract: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Abstract: In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface a

Abstract: The invention relates to an optoelectronic semiconductor component including a semiconductor body having a first region with a first conductivity, a second region with a second conductivity and an active region which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body. The semiconductor body has a mounting side and side surfaces running transversely to the mounting side. Side surfaces running parallel to the resonator axis are covered by an electrically insulating passivation. A cooling layer which is designed to dissipate at least part of the power loss created in the semiconductor body during operation is arranged on a side of the passivation facing away from the semiconductor body. The invention also relates to an optoelectronic module.

Abstract: A mirror for a laser is specified, the mirror including a layer stack having at least a first layer containing a first material and at least a second layer containing a second material, the first material having a first refractive index and the second material having a second refractive index, the first refractive index and the second refractive index differing by at least 0.2, and the reflectivity of the mirror in the event of a first exit medium adjoining the mirror, the first exit medium being translucent at least at points to electromagnetic radiation at a specifiable wavelength, differing by less than 10% from the reflectivity of the mirror in the event of a second exit medium adjoining the mirror. the second exit medium differing from the first exit medium and being translucent at least at points to electromagnetic radiation at the specifiable wavelength, for a wavelength range of at least ±20 nm about the specifiable wavelength. Moreover, a laser and a laser component are specified.

Abstract: The invention relates to a laser component including a semiconductor laser chip having a laser facet with an active zone, and an optical element which is mounted after the semiconductor laser chip on the laser facet, wherein the semiconductor laser chip and the optical element are connected to each other by a welding connection that is free from welding additives.

Abstract: In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

Abstract: In an embodiment a method for manufacturing at least one electronic component includes providing a second surface area of the component adjacent to a first surface area, wherein the second surface area is repulsive to a first fluid to be applied, applying the first fluid without additional pressurization to the first and/or second surface area, wherein the first surface area is wetted by the first fluid and the first fluid is repelled from the second surface area and applying a second fluid to the first surface area, to the second surface area and/or to a surface area of the solidified first fluid, after solidification of the first fluid applied to the first surface area, wherein applying the second fluid includes applying a positive pressure, a plasma action and/or a compression molding, and wherein the second fluid wets the second surface area.

Abstract: An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

Abstract: A low-dropout regulator for low voltage applications includes a buffer circuit being arranged between an output terminal of an error amplifier and a control node of a pass device. The buffer circuit includes a driver having a first transistor being embodied as an NMOS transistor. The output terminal of the error amplifier is coupled to the control node of the first transistor. The control node of the pass device is coupled to an internal node of a first current path including the first transistor. The low-dropout regulator has high load capability, even if an input supply voltage is very low.

Abstract: The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

Abstract: The invention relates to an optoelectronic lighting device comprising a carrier, at least one light emitting semiconductor element which is arranged on a top surface of the carrier and is configured to emit light with a wavelength smaller than 550 nm, a mold compound which is substantially transparent to the light emitted by the semiconductor element and encapsulates the light emitting semiconductor element on the carrier, a frame which is arranged on the top surface of the carrier and projects beyond the light emitting semiconductor element in a direction perpendicular to the top surface of the carrier, and which delimits the mold compound in at least one spatial direction, and a cover element which is substantially transparent to the light emitted by the semiconductor element and which is arranged floating on the mold compound as seen in an emission direction of the optoelectronic lighting device.

Abstract: A driver circuit for low voltage differential signaling, LVDS, includes a phase alignment circuit including an input configured to receive an input signal, a first output configured to provide an internal signal as a function of the input signal, and a second output configured to provide an inverted internal signal, which is the inverted signal of the internal signal, and an output driver circuit coupled to the phase alignment circuit, the output driver circuit including a first input configured to receive the internal signal, a second input configured to receive the inverted internal signal, a first output configured to provide an output signal as a function of the internal signal and a second output configured to provide an inverted output signal which is the inverted signal of the output signal. The phase alignment circuit provides the inverted internal signal with its phase aligned to a phase of the internal signal.

Abstract: The invention relates to a semiconductor component with a semiconductor chip and a radiation conversion element which is arranged on the semiconductor chip. The semiconductor chip has an active region which is designed to generate a primary radiation with a peak wavelength, the radiation conversion element has a quantum structure, the peak wavelength of the primary radiation lies in the infrared spectral range, and the quantum structure at least partly converts the primary radiation into a secondary radiation, wherein the emission wavelength of an emission maximum of the secondary radiation is greater than the peak wavelength. The invention additionally relates to a method for producing radiation conversion elements.

Abstract: In an embodiment an optoelectronic component includes a carrier with a mounting area, an optoelectronic semiconductor chip, a dielectric protective layer and a dielectric encapsulation, wherein the protective layer is directly located at the mounting area in a chip mounting region, wherein the semiconductor chip is located at the protective layer in the chip mounting region and is electrically conductively connected with the carrier, wherein the encapsulation is directly located at the mounting area in a region adjacent to the chip mounting region and is directly located at the protective layer in an overlap region, and wherein the encapsulation is arranged exclusively in the region adjacent to the semiconductor chip.

Abstract: In an embodiment a pulse sensor includes two light sources configured to emit light in a direction of a perfused tissue of a living being so that the perfused tissue scatters the light and so that the scattered light is modulated on basis of a pulse of the living being, at least one luminescent concentrator including an entry face, an exit face smaller than the entry face, and a fluorescent material arranged in a light path between the entry face and the exit face, wherein the luminescent concentrator is configured to receive at least some of the modulated scattered light entering through the entry face, convert the entered light by the fluorescent material and emit the modulated converted light from the exit face, and one light detector configured to detect at least some of the modulated converted light emerging from the exit face, wherein, in plan view, the luminescent concentrator is strip-shaped and extends perpendicular to a connecting line between the two light sources, wherein side faces of the lumines

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to a laser package comprising a first laser diode for emitting light of a first wavelength and at least one second laser diode for emitting light of a second wavelength. The laser package also comprises a reflector module which is arranged in the beam path of the first and of the at least one second laser diode and which is configured to shape the light emitted by the laser diodes and to deflect it by at least 90° in the direction of an optical fiber with respect to an emission direction of the first and of the at least one second laser diode. The light guide runs essentially parallel to the emission direction and comprises an incoupling structure which is configured to couple the light deflected by the reflector module in the direction of the light guide into the light guide.