Abstract: The invention relates to a laser diode component including a first semiconductor layer stack which has a first active zone for emitting a first laser radiation, a second semiconductor layer stack which has a second active zone for emitting a second laser radiation, the first and second semiconductor layer stacks following one another in a main emission direction, a resonator which has a first reflective layer and a second reflective layer, and an electrically conductive connecting region which is arranged between the first and second semiconductor layer stacks and has a first connecting layer and a second connecting layer, wherein the first connecting layer is applied to the first semiconductor layer stack, and the second connecting layer is applied to the second semiconductor layer stack. The invention also relates to a method for producing at least one laser diode component.

Abstract: A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.

Abstract: In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a co

Abstract: The invention relates to a surface-emitting photonic crystal laser (1). The laser has an active layer for generating electromagnetic radiation by combining charge carriers, wherein the active layer has a first main surface and a second main surface lying opposite the first main surface. The first main surface is equipped with a first waveguide layer, and the second main surface is equipped with a second waveguide layer, said waveguide layers having regions which are arranged periodically relative to one another and additional regions which have different refractive indices and which form a photonic crystal. The first waveguide layer is equipped with a first casing layer which has at least one p-connection region for injecting electrically positive charge carriers into the active layer and at least one n-connection region for injecting electrically negative charge carriers into the active layer.

Abstract: In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring

Abstract: In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: The invention relates to a laser component including a first laser chip with a first emission region, a second laser chip with a second emission region, and a connection carrier with an upper side and an underside, wherein the first laser chip is secured to the upper side of the connection carrier and is electrically connected, the second laser chip is secured to the underside of the connection carrier and is electrically connected, and the connection carrier has a thickness of max. 200 ?m.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

Abstract: In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

Abstract: A diode array with at least two image elements. The diode array includes a distribution transistor as well as a feed line for receiving a reference current and a first supply terminal coupled to the distribution transistor for supplying the distribution transistor. A diode and an input transistor are provided for each image element, each of which is coupled to the diode for supplying the diode. The distribution transistor forms a distribution current mirror with the respective input transistor of at least two image elements.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.