Abstract: An optoelectronic unit includes a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit. The optoelectronic unit also includes a component including an optically active material. The component is arranged at least partially in the beam path of the semiconductor chip. The optically active material is not intended to be excited by the primary radiation with the first wavelength range. The optically active material incudes a proportion in the component of 0.004 wt %, inclusive, to 1 wt %, inclusive.

Abstract: In an embodiment a storage device includes a base carrier extending along a main surface having a surface structuring, a carrier foil including a first main surface and a second main surface, wherein the first main surface is fixable to or arrangeable on the main surface of the base carrier, and wherein the components are fixable to the second main surface and a fixing frame fixing the carrier foil, which is fixed or positioned to the main surface of the base carrier, to the base carrier and acting as a releasable clamp so that the carrier foil is clampable and securable in or to the base carrier.

Abstract: A method for producing a radiation emitting semiconductor chip may include providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, applying a reflective layer sequence over the semiconductor layer sequence, generating a first recess through an opening of a mask where the first recess completely penetrates the reflective layer sequence and the active region, and applying a dielectric mirror layer in the first recess through the same opening of the same mask. Furthermore, a radiation emitting semiconductor chip is disclosed.

Abstract: A laser device comprises a carrier, an optoelectronic component provided on the carrier, said component being designed to emit laser radiation, and an optical element designed to form the laser radiation emitted by the optoelectronic component, wherein: the optical element has a first layer that is at least partially transparent to the laser radiation, with a first refractive index, and a second layer that is at least partially transparent to the laser radiation, with a second refractive index; the first layer being applied to the optoelectronic component and having a surface with an imprinted structure; and the second layer is applied to the first layer, on the surface (24) having the imprinted structure.

Abstract: A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

Abstract: The invention relates to an optoelectronic component comprising a housing, an optoelectronic semiconductor chip and an optical element. The housing comprises a lead frame which has two external electrical contact points and two contact portions. The housing also comprises a housing body in which the lead frame is embedded, wherein each contact portion extends laterally out of one of the external electrical contact points in each case to a mounting surface of the housing, and therefore contact surfaces of the contact portions are exposed on the mounting surface. An electrical contact structure of the optical element is electrically conductively connected to the contact surfaces of the contact portions.

Abstract: A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.

Abstract: In an embodiment an apparatus includes at least one optoelectronic laser configured to provide excitation radiation to a sample, the excitation radiation being generated by an electric current flowing through the at least one optoelectronic laser, a transistor configured to modulate the electric current flowing through the at least one optoelectronic laser in order to switch on and off generation of the excitation radiation and a spectrometer configured to analyze Raman light scattered from the sample in response to exposing the sample to the excitation radiation, wherein the Raman light includes one or more spectral components, wherein the spectrometer includes a diffraction element configured to split the Raman light into the spectral components, and wherein the diffraction element includes at least a photonic crystal or a plasmonic Fabry Perot filter.

Abstract: Various implementations disclosed herein include a distance measuring unit for measuring, on the basis of a time-of-flight signal, a distance to an object situated in a detection field. The distance measuring unit includes an emitter unit for emitting pulses in the form of electromagnetic radiation, and a receiver unit comprising a sensor area for receiving the electromagnetic radiation in the form of echo pulses, and a mirror unit disposed upstream of the sensor area, wherein a detection field of the receiver unit is subdivided into a plurality of receiver solid angle segments, and wherein the plurality of receiver solid angle segments are assigned to the same sensor area in that echo pulses incident on the mirror unit from a respective receiver solid angle segment are reflected onto the sensor area when the mirror unit is in a tilt state associated with the respective receiver solid angle segment.

Abstract: A display device with a connection carrier and a plurality of pixels, which are drivable via row lines and column lines, is specified. The row lines and the column lines are arranged on the connection carrier. At least one row line is interrupted at an imaginary crossing point with a column line on the connection carrier. A bridging component is arranged on the connection carrier, which bridges the row line at the imaginary crossing point in an electrically conductive manner.

Abstract: In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

Abstract: An optical device including at least two optical systems comprising a respective light source that is individually controllable. Furthermore, a respective optical system includes a light guide into which the light of the respective light source can be input. Additionally, a respective optical system has a light output side, and the second optical system additionally has a light input side into which light exiting from the light output side of the first optical system irradiates. Moreover, an image mask is arranged between the optical systems, the image mask being provided in the optical path between the light output side of the first optical system and the light input side of the second optical system.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

Abstract: A radiation-emitting component is specified with a carrier having a cavity, a radiation-emitting semiconductor chip which is arranged on a bottom surface delimiting the cavity and which is configured to generate primary electromagnetic radiation, and a first reflector layer arranged above a top surface of the semiconductor chip, wherein the carrier is transparent in places to the primary electromagnetic radiation, and the semiconductor chip is spaced apart from at least one side surface delimiting the cavity.

Abstract: Disclosed is a semiconductor laser with a vertical emission direction including a first active region and a first photonic crystal, wherein during operation of the semiconductor laser, first radiation emitted in the first active region is partially deflected into the vertical emission direction by means of the first photonic crystal, a second active region and a second photonic crystal, wherein during operation of the semiconductor laser, second radiation emitted in the second active region is partially deflected into the vertical emission direction by means of the second photonic crystal, and a connection region which is arranged in the vertical emission direction between the first active region and the second active region and connects the first active region and the second active region together in an electrically conductive manner. Also disclosed is a method for producing a semiconductor laser.

Abstract: In an embodiment an electronic load for installation in a power supply of a vehicle lamp includes a first connection node connected to two first connection sections adapted to be connected between respective corresponding connection sections of a first line carrying a voltage potential, a second connection node connected to two second connection sections adapted to be connected between respective corresponding connection sections of a second line carrying a reference potential, wherein a difference between the voltage potential and the reference potential comprises a supply voltage configured to be supplied to the vehicle lamp and a current sink circuit coupled between the first and second connection nodes, the current sink circuit configured to cause a substantially constant current flow independently of a time-varying supply voltage from at least one of the first connection sections to at least one of the second connection sections.

Abstract: In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlxGa1-x)yIn1-y]zP1-z with x?0.5, and wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o<a?0.2.

Abstract: A laser device comprises a plurality of laser diodes, each laser diode emitting a light beam having a fast axis and a slow axis and a beam direction; and one or more optical components configured to modify a divergence of the light beams in a fast axis plane and/or in a slow axis plane such that the light beams have a same focal plane in the fast axis plane and in the slow axis plane.

Abstract: The invention relates to an optoelectronic semiconductor component having a frame body, which is radiolucent at least in regions, and at least one first semiconductor chip which is designed to emit a first electromagnetic radiation. The frame body has a recess. At least a first waveguide is formed in the frame body. A first coupling surface of the first waveguide is formed on a side surface of the recess facing the first semiconductor chip. A decoupling surface is formed on an outer surface of the frame body. The first semiconductor chip is arranged in the recess in such a way that at least a part of the first electromagnetic radiation enters into the first waveguide. The invention also relates to method for producing a plurality of optoelectronic semiconductor components.

Abstract: A laser diode component is described including: a semiconductor layer stack having an active zone for emitting laser radiation, a photonic crystal structure having a plurality of structured portions, contacts for electrically contacting the laser diode component, one contact having a plurality of contact portions arranged in recesses of the semiconductor layer stack (2), wherein the contact portions penetrate the active zone.