Patents Assigned to OSRAM Opto Semiconductors GmbH
  • Patent number: 10535515
    Abstract: A method of producing an optoelectronic semiconductor chip includes in order: A) creating a nucleation layer on a growth substrate, B) applying a mask layer on to the nucleation layer, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, D) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and creating a roughening by etching.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: January 14, 2020
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Joachim Hertkorn
  • Publication number: 20200006594
    Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.
    Type: Application
    Filed: February 28, 2018
    Publication date: January 2, 2020
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Marcus Eichfelder
  • Patent number: 10522699
    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: December 31, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Strauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
  • Patent number: 10519371
    Abstract: A luminescent material may include the formula (MB) (TA)3?2x(TC)1+2xO4?4xN4x:E where 0<x<0.875. —TA may be selected from a group of monovalent metals, such as Li, Na, Cu, Ag, and combinations thereof. —MB may be selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn, and combinations thereof. —TC may be selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals, and combinations thereof. —E may be selected from a group including Eu, Mn, Ce, Yb, and combinations thereof.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: December 31, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Markus Seibald, Dominik Baumann, Thorsten Schroeder, Stefan Lange, Gregor Hoerder, Gina Maya Achrainer, Hubert Huppertz, Simon Peschke, Alexey Marchuk, Philipp Schmid, Franziska Hummel, Stephanie Dirksmeyer
  • Patent number: 10520164
    Abstract: A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: December 31, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: I-Hsin Lin-Lefebvre, Reinhard Streitel, Michael Schmal, Urs Heine, Eric Lefebvre, Markus Keidler
  • Publication number: 20190393676
    Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25).
    Type: Application
    Filed: September 27, 2016
    Publication date: December 26, 2019
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Sven GERHARD, Alfred LELL, Clemens VIERHEILIG, Andreas LOEFFLER, Christoph EICHLER
  • Patent number: 10516252
    Abstract: A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: December 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alexander Bachmann, Volker Grossmann
  • Patent number: 10516079
    Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the firs
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: December 24, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Isabel Otto, Alexander F. Pfeuffer, Dominik Scholz
  • Patent number: 10511138
    Abstract: A laser component includes a housing that includes a base section including a top side and an underside, wherein a plurality of electrical soldering contact pads are configured at the underside of the base section, the electrical soldering contact pads enabling surface mounting of the laser component, a plurality of electrical chip contact pads are configured at the top side of the base section and electrically conductively connect to the soldering contact pads, the housing includes a cavity adjoining the top side of the base section, and a laser chip is arranged in the cavity and electrically conductively connects to at least some of the chip contact pads.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: December 17, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Andreas Wojcik, Martin Haushalter
  • Patent number: 10510916
    Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: December 17, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Mohammad Tollabi Mazraehno, Peter Stauß, Alvaro Gomez-Iglesias
  • Patent number: 10510935
    Abstract: An optoelectronic component includes at least one optoelectronic semiconductor chip, wherein the semiconductor chip is arranged on a leadframe section, the leadframe section includes a stiffening structure projecting away laterally from the leadframe section, and the leadframe section, the stiffening structure and the semiconductor chip are embedded in an electrically insulating housing.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: December 17, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Daniel Richter
  • Patent number: 10505337
    Abstract: A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: December 10, 2019
    Assignee: OSRAM OPTO SEMICONDUCTOR GMBH
    Inventors: Sven Gerhard, Andreas Löffler
  • Patent number: 10505085
    Abstract: An optoelectronic semiconductor device, a method for manufacturing an optoelectronic semiconductor device and light source having an optoelectronic semiconductor device are disclosed.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: December 10, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventor: Norwin von Malm
  • Patent number: 10504879
    Abstract: The invention relates to a component with at least one optoelectronic semiconductor chip, comprising: a connection substrate, which has an assembly surface and electric contact structures, and a plurality of structured semiconductor units, each of which has a plurality of monolithically connected pixels with a respective active layer that emits light during operation, wherein: the semiconductor units are arranged at a lateral distance to one another on the assembly surface, the distance between adjacent semiconductor units is at least 5 ?m and maximally 55 ?m, and the pixels can be controlled in an electrically separated manner. The invention also relates to a method for producing said component.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: December 10, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Alexander Martin, Norwin Von Malm
  • Patent number: 10505091
    Abstract: A component comprising a support and a semiconductor body arranged on the support, the support formed by a molded body and a metal layer. The metal layer has a first subregion and a second subregion laterally spaced apart by an intermediate space and thereby electrically separated. The molded body fills the intermediate space and has a surface extending in lateral directions free from the subregions of the metal layer and forms the rear side of the support. The support has a side face formed by a surface of the molded body extending in vertical directions, at least one of the subregions formed such that electrical contact can be made by way of the side face.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: December 10, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Norwin von Malm, Frank Singer
  • Patent number: 10505080
    Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: December 10, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Markus Seibald, Dominik Baumann, Tim Fiedler, Stefan Lange, Hubert Huppertz, Daniel Dutzler, Thorsten Schroeder, Daniel Bichler, Simon Peschke
  • Patent number: 10497838
    Abstract: A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 ?m inclusive.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: December 3, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: I-Hsin Lin-Lefebvre, Reinhard Streitel, Darshan Kundaliya
  • Patent number: 10497830
    Abstract: An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 ?m in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).
    Type: Grant
    Filed: January 11, 2016
    Date of Patent: December 3, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Thomas Lehnhardt, Martin Mandl
  • Publication number: 20190363234
    Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a plurality of active regions configured to emit electromagnetic radiation, wherein the active regions are arranged spaced apart from each other, wherein the active regions have a main extension direction, wherein each active region has a core region, an active layer covering the core region at least in directions transverse to the main extension direction, wherein each active region has a cover layer covering the active layer at least in directions transverse to the main extension direction, wherein each active region has a current spreading layer at least partly covering sidewalls of each respective active region, and wherein a metal layer directly adjoins parts of the active regions and parts of the current spreading layers.
    Type: Application
    Filed: January 23, 2018
    Publication date: November 28, 2019
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventor: Tansen VARGHESE
  • Patent number: 10490121
    Abstract: A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: November 26, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Stefan Illek, Norwin von Malm, Tilman Ruegheimer