Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.

Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

Abstract: A semiconductor structure and a light-emitting device having a light-emitting diode and a plurality of semiconductor structures are disclosed. In an embodiment, the semiconductor structure includes an elongated seed particle including a first semiconductor material, wherein the seed particle has an aspect ratio of greater than 2.0, and wherein the semiconductor structure is part of or forms a quantum dot.

Abstract: A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess.

Abstract: A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Abstract: A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence.

Abstract: An optoelectronic lighting device includes a black housing including a cavity, wherein the cavity includes a base, a semiconductor component is arranged on the base of the cavity with an underside of a main body facing the base, and the cavity is filled with a reflective material from the base up to a predetermined height, which is smaller than a height of a top side of the main body relative to the base of the cavity such that electromagnetic radiation emerging from the main body through side faces may be reflected by the reflective material back in the direction of the side faces to couple reflected electromagnetic radiation into the main body such that at least part of the electromagnetic radiation coupled in may emerge again from the main body through the top side of the main body.

Abstract: An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract: A filament for a filament lamp includes a plurality of light emitting semiconductor chips, wherein the light emitting semiconductor chips are located on a carrier board, the light emitting semiconductor chips are electrically connected, and the carrier board is a flexible carrier board.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including first and second electrical contacts, a first leadframe section including a first chip contact pad and a first soldering contact pad situated opposite the first chip contact pad, and a second leadframe section including a second chip contact pad and a second soldering contact pad situated opposite the second chip contact pad, wherein the first electrical contact electrically conductively connects to the first chip contact pad and the second electrical contact electrically conductively connects to the second chip contact pad, the first and second leadframe sections are embedded into a housing such that at least parts of the first and second soldering contact pads are accessible at an underside, and a solder stop element is arranged at the underside of the housing, the solder stop element extending between the first soldering contact pad and the second soldering contact pad.

Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Abstract: A semiconductor structure includes a quantum dot. A polymeric organic layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional organic layer and/or inorganic insulator layer encapsulates the coated quantum dot, wherein forming the one or more layers of organic material that encapsulates the coated quantum dot comprises forming a plurality of layers of polymers using a layer-by-layer deposition process.

Abstract: An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.

Abstract: An optoelectronic component includes an active zone that generates electromagnetic radiation, wherein the electromagnetic radiation is guided in a guide plane, the electromagnetic radiation is output essentially in the guide plane, the active zone emits stray radiation laterally with respect to the guide plane, an electrical contact pad is provided, the contact pad is arranged outside the guide plane, the contact pad is formed by a surface at least partially covered by a conductive layer, the surface has inclined partial faces, and the electrically conductive layer on at least a subset of the inclined faces of the contact pad is configured to be so thin that electromagnetic stray radiation is emitted via the subset of the inclined faces.

Abstract: A component includes a carrier with a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer includes a first subregion and a second subregion, and at least one of the subregions extends in a vertical direction through a mold body to electrically contact a semiconductor body, and the first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body.

Abstract: An optoelectronic lighting device includes a carrier, a plurality of light-emitting optoelectronic components arranged on an upper side of the carrier, and at least one layer of a hydrophobic aerogel that protects the plurality of light-emitting optoelectronic components from influences of moisture. A video wall module includes the optoelectronic light device. A signal transmitter for a light signaling installation includes the optoelectronic light device.