Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: The invention relates to a semiconductor laser device a surface emitting semiconductor laser element having a GaN-containing compound semiconductor layer and a converter. The converter is adapted to convert a wavelength of laser radiation emitted from the surface emitting semiconductor laser element.

Abstract: An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.

Abstract: An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.

Abstract: A component having a carrier and at least one main body where the main body may include a semiconductor body and the carrier may have a mounting surface for arranging the mounting body thereon. A stopping structure may be arranged on the mounting surface and may project vertically beyond the mounting surface. The main body may be directly adjacent to the stopping structure such that the position of the main body is bounded along at least one lateral direction by the stopping structure.

Abstract: An optoelectronic sensing device may include an optoelectronic detection device configured to detect light and provide an electrical signal as a function of detected light. The device may further include a signal detection device configured to store at least one signal value of the electrical signal in a memory during a time interval of repeating time intervals and to output an indication signal after the time interval has elapsed.

Abstract: The invention relates to a laser chip located between a first and a second electrically and thermally conductive component, wherein: a first lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the first component; the second lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the second component; the laser chip has a radiation side which is located between the components; the radiation side is arranged set back inwardly at a predefined distance from the first end faces of the components; and a radiation space, which extends from the radiation side of the laser chip to the first end faces of the components is formed between the first lateral surfaces of the two components and adjacent to the radiation side of the laser chip.

Abstract: An optoelectronic semiconductor chip may have or include an x-doped region, a y-doped region, an active region arranged between the x-doped region and the y-doped region, and an x-contact region. The x-contact region may be arranged to the side of the x-doped region facing away from the active region. The x-contact region may include at least one first region and at least one second region. The x-contact region may be designed such that, during operation of the optoelectronic semiconductor chip, more charge carriers are injected into the x-doped region via the second region than via the first region.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side.

Abstract: An assembly of electronic semiconductor components includes a carrier, at least one optoelectronic semiconductor component, a varactor component and a receiving element. The optoelectronic semiconductor component, the varactor component and the receiving element are arranged on the carrier. The optoelectronic semiconductor component and the varactor component are formed with the same semiconductor material. The optoelectronic semiconductor component has an active region configured for emitting electromagnetic radiation. The varactor component together with the receiving element forms a tunable resonant circuit. The resonant circuit is configured to draw energy for operating the optoelectronic semiconductor component from an alternating electromagnetic field.

Abstract: In an embodiment a transfer tool includes an adhesive stamp having an adhesive surface configured to pick up a semiconductor chip and a device configured to adjust a surface area of the adhesive surface, wherein the adhesive stamp is deformable, wherein the adhesive surface is formed by a part of an outer surface of the adhesive stamp, wherein the surface area of the adhesive surface is adjustable by deformation of the adhesive stamp, and wherein the adhesive surface is free of interruptions.

Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0.

Abstract: The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.

Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0?x?1, 0?y<1 and x+y?1, wherein at least one layer of the layer system includes an aluminum portion x?0.05 or an indium portion y?0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Abstract: Disclosed is an optoelectronic semiconductor component including at least one optoelectronic semiconductor chip in an interior of a housing; the housing has a base part and a top part, the base part is a ceramic support, the top part is made of one or more glass materials, a connection layer that is made of a solder glass is arranged between the base part and the top part, and the ceramic support includes a connection portion with a nickel-containing surface which is in direct contact with the solder glass.

Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror includes a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror includes a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: In an embodiment, an adhesive stamp includes a plurality of variable-length stamp bodies arranged in an array, wherein each stamp body has an adhesive surface on a head portion of the stamp body, the adhesive surface configured to hold a semiconductor chip, wherein a first electrode is arranged in the head portion, wherein the first electrode is chargeable and whose polarity is changeable, wherein a second electrode is arranged in a foot portion of the stamp body, wherein the second electrode is chargeable and whose polarity is changeable, wherein a length of the stamp body is variable depending on charges applied to the first electrode and the second electrode, and wherein the adhesive stamp is configured to transfer semiconductor chips.

Abstract: Various implementations disclosed herein include a distance measuring unit for signal transition time-based measurement of a distance to an object located in a detection field, with an emitter unit with multiple emitters, each designed to emit pulses in the form of electromagnetic radiation, a receiver unit for receiving the electromagnetic radiation after a distance-dependent transition time, and a tiltable mirror, wherein the distance measuring unit is configured such that a first of the emitters emits multiple pulses sequentially via the mirror, including at a first time in a first solid angle segment in a first angular position of the mirror, and at a second time in a second solid angle segment in a second angular position of the mirror; and a second of the emitters also emits a pulse in at least one of the solid angle segments via the mirror.