Abstract: The invention relates to an optoelectronic device having at least two emission regions and having a radiation exit face, the emission regions each having an active region provided to generate radiation, the active regions of the emission regions being arranged in a common emitter plane. The emission regions are each assigned a portion of the radiation exit face through which portion the radiation emitted by the respective emission region exits, wherein the radiation exit face is formed at least in part by a radiation-permeable body which is arranged on at least one of the emission regions, and wherein the portions of the radiation exit face are arranged at differing distances from the common emitter plane.

Abstract: In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm?3.

Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (612a), (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612

Abstract: An optoelectronic component (1) is specified, with at least one radiation-emitting semiconductor chip generating electromagnetic radiation during operation, a coating surrounding the at least one semiconductor chip in lateral directions, a magnetic structure covered by the coating, wherein the magnetic structure enables the component to be identified. Furthermore, a process for the manufacture of such an optoelectronic component is given.

Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The at least one doped well and the substrate are electrically contactable. A cover layer is arranged on the main surface of the substrate. The cover layer is at least one of an epi-layer of the first type of electric conductivity and a dielectric surface passivation layer comprising a plurality of space charges, or a combination thereof.

Abstract: An optical system for use in a headlamp of a motor vehicle includes condenser optics formed by a condenser lens matrix and being provided to focus incoming light beams. It further includes at least one reflective shield being provided to reflect at least a subset of the focused light beams and to create a cut-off line of outgoing light beams. It further includes imaging optics formed by an imaging lens matrix, which is provided to project the focused light beams and the reflected light beams in front of the headlamp, such that the reflected light beams contribute to an intensity hotspot on one side of the cut-off line.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A transimpedance amplifier may include a voltage-controlled operational amplifier having a non-inverting input connected to ground, an inverting input receiving a current signal to be amplified, an output coupled to the inverting input via a coupling resistor, and a power-down input (PWDN input) activated upon receipt of at least one power-down signal (PWDN) such that at least one internal current source is thereupon deactivated.

Abstract: A method for operating clocked and regulated electronic power converters may be contained in operating devices for light-emitting diodes. An associated regulating circuit may include at least one regulating amplifier having at least two regulating inputs, from the output of which a negative feedback network runs to one of its regulating inputs, a first input for the signal for a target value of the average of the output power to be regulated, and a second input which forwards a signal for the target value of a waveform or of a pulse pattern for the output power to be regulated to one of the regulating inputs via a DC current-blocking high-pass filter.

Abstract: An optical absorbance spectrometer includes a sample housing, a light source and a spectral sensor. The sample housing comprises at least two sample cells configured to hold a sample, respectively, and includes an optical waveguide which is configured to guide light from an input side, through the sample cells, to an output side. The light source is operable to emit broadband light and is connected to the input side to couple emitted light into the optical waveguide. The spectral sensor is connected to the output side and operable to receive light from the optical waveguide and to detect the intensity of the received light at multiple wavelengths.

Abstract: A test strip cassette includes a housing defining a first opening being configured to receive a sample liquid, the housing further defining a second opening configured to provide an optical path into the housing, and a spacer structure. It further includes a carrier including at least one photodetector, the at least one photodetector being aligned with the second opening of the housing. It further includes a test strip including a sample pad aligned with the first opening and at least one active area aligned with the second opening and the at least one photodetector. The housing encloses the carrier and the test strip, such that the test strip is spaced from the carrier by the spacer structure and arranged between the second opening and the carrier.

Abstract: In a method of manufacturing a package, in particular an injection molded circuit carrier, MID, at least one injection molded cover plate forming a cavity is provided having a cover area and a perimeter defining the cover area; wherein the cover area includes an opening. Two conductive traces having a first portion on a top edge of the surround, a second portion on a side surface of the surround, and a third portion on the cover area are formed, and then an optical element is formed in the opening of the cover area. Finally, a loop-shaped interlock circuit is applied to the optical element in an edge portion between the opening and the cover area, wherein one end of the loop-shaped interlock circuit is connected to each of the first and second conductive paths.

Abstract: A method for forming a lift-off mask structure includes providing a substrate body, depositing a layer of bottom anti-reflective coating, BARC, over a surface of the substrate body, and depositing a layer of photosensitive resist over the BARC layer. The method further includes exposing the resist layer to electromagnetic radiation through a photomask, and forming the lift-off mask structure by applying a developer for selectively removing a portion of the BARC layer and of the resist layer such that an underlying portion of the surface of the substrate body is exposed.

Abstract: A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.

Abstract: In an embodiment a beam-guiding cavity structure includes at least one first curved surface, one second curved surface and one third curved surface spanning a cavity, the first-third curved surfaces respectively having at least one first focal point and one second focal point, wherein the cavity is configured such that substantially no distance is laterally formed between the first focal point of the first curved surface and the second focal point of the second curved surface, wherein the cavity is further configured such that substantially no distance is laterally formed between the first focal point of the second curved surface and the second focal point of the third curved surface, wherein the first focal point of the second curved surface is arranged next to a connecting line of the first and second focal points of the first curved surface, wherein the first focal point of the third curved surface is arranged next to a connecting line of the first and second focal points of the second curved surface, and

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The invention relates to a radiation-emitting laser component including:—an edge-emitting laser diode which is designed to generate electromagnetic laser radiation, and—a substrate, on which the edge-emitting laser diode is arranged, wherein—the edge-emitting laser diode has a contact layer,—the substrate has a substrate web, and—the contact layer is connected to the substrate web by means of a solder layer in a mechanically stable manner. The invention also relates to a method for producing a radiation-emitting laser component.

Abstract: In at least one embodiment a camera system includes a multi-focus lens, an image sensor and an image processor. The multi-focus lens has a first focal length and a second focal length. The image processor is arranged downstream of the multi-focus lens. In operation, the image sensor generates a combined image according to the first and second focal lengths of the multi-focus lens. The image processor receives the combined image and separates the combined image into a first image of the first focal length and a second image of the second focal length.

Abstract: A projection apparatus includes a light source for emitting light with an initial spectral distribution, an optical element, and a projection surface. The optical element is arranged in a beam path of light emitted from the light source between the light source and the projection surface. The optical element includes a number of pixels. The pixels of the optical element are each configured to convert light with the initial spectral distribution into light with a predetermined final spectral distribution different from the initial spectral distribution.

Abstract: A method for producing a plurality of semiconductor lasers is specified, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.