Abstract: In an embodiment a lamp includes a light source having a light source circuit board and a light emitting element arranged on the light source circuit board, a driver configured to drive the light source and having a driving circuit board and a driving electronic element arranged on the driving circuit board, a connector connectable to a power source, wherein the driver is connected to the connector such as to be spatially separated from the light source and a heat sink inside which the light source and the connector are fixedly attached in such a manner that the light source and the driver are radially surrounded by the heat sink, wherein the connector includes a supporting column configured to support the driving circuit board and a retainer configured to hold the driving circuit board.

Abstract: The invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and an active layer between the first and the second semiconductor layers. The optoelectronic semiconductor chip further comprises a first contact structure with a plurality of first contact pins and a first contact layer for electrically contacting the first semiconductor layer and a second contact structure for electrically contacting the second semiconductor layer. The first semiconductor layer is disposed between the first contact layer and the active layer. The first contact pins are disposed between the first contact layer and the first semiconductor layer and are separated and spaced at a distance from one another in the lateral direction. An electrical connection with an electrical resistance between the first contact layer and the first semiconductor layer is formed by each first contact pin.

Abstract: A luminophore having the empirical formula A3M*OxF9-2x:Mn4+ where A may be or include Li, Na, Rb, K, Cs, or combinations thereof. M* may be or include Cr, Mo, W, or combinations thereof. x may be or include 0<x<4.5.

Abstract: The invention relates to a semiconductor light emitting chip including a semiconductor layer sequence having an active layer which is provided and arranged to generate light when in operation and to couple out via a light outcoupling surface, a filter layer deposited on the light outcoupling surface, and a contact structure deposited on the light outcoupling surface in a region free of the filter layer. The invention also relates to a method for producing said light-emitting semiconductor chip.

Abstract: An optoelectronic device is specified having a transmitter which is designed to emit electromagnetic radiation and to be operated at an input voltage, a support for the transmitter, said support having a top surface and a bottom surface, a first receiver which is designed to receive at least part of the electromagnetic radiation and to supply at least part of an output voltage, wherein the transmitter comprises at least one surface emitter, the at least one surface emitter of the transmitter is mounted on the top surface of the support and radiates at least part of the electromagnetic radiation through the support, the first receiver (3) comprises at least one photodiode, and the first receiver is arranged on the bottom surface of the support.

Abstract: The invention relates to an optoelectronic semiconductor layer sequence comprising:—an active layer for generating radiation, and—at least one filter layer configured to at least partially absorb the electromagnetic radiation generated by the active layer of wavelengths smaller than a predetermined cutoff wavelength. The invention also relates to an optoelectronic semiconductor device.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.

Abstract: A method of manufacturing a semiconductor device includes epitaxially growing a sacrificial layer over a GaN substrate, epitaxially growing a first semiconductor layer over the sacrificial layer and forming a first layer over a first main surface of the first semiconductor layer, the first main surface being on a side of the first semiconductor layer remote from the GaN substrate. The method further includes forming a fluid channel or trench extending through the first layer and the first semiconductor layer to the sacrificial layer, etching the sacrificial layer, including introducing an etchant into the fluid channel or trench, to remove the GaN substrate and forming a second dielectric layer over a second main surface of the first semiconductor layer.

Abstract: A method of producing an optoelectronic component includes providing a semiconductor wafer with a functional semiconductor layer that has electronic control elements, and a growth layer; generating a plurality of recesses in the semiconductor wafer exposing the growth layer in places; and epitaxially growing a plurality of semiconductor layer stacks on the exposed growth layer, wherein a surface of the exposed growth layer is used as a growth surface for the semiconductor layer stacks, and the growth surface is inclined to a main extension plane of the semiconductor wafer.

Abstract: The invention relates to a radiation-emitting semiconductor body, having a first semiconductor region of a first doping type, which has a first material composition, a second semiconductor region of a second doping type, which has a second material composition, an active region, which is located between the first semiconductor region and the second semiconductor region, and a first intermediate region, which is located between the first semiconductor region and the active region, wherein the active region includes a plurality of quantum well layers and a plurality of barrier layers, which are arranged alternatingly one above the other, the barrier layers have a third material composition, the first intermediate region includes at least one first blocking layer and at least one first intermediate layer, and the first blocking layer has a fourth material composition and the first intermediate layer has a fifth material composition. The invention also relates to a laser diode and to a light-emitting diode.

Abstract: The invention relates to an illumination device having a housing with a light-exit region and an assembly element arranged below the light-exit region. A conversion element is arranged on the assembly element and designed to convert pump light into emission light in a surface region of the conversion element and to emit said emission light via the surface region. Two surface-emitting laser apparatuses for producing the pump light are arranged opposite one another on the assembly region and are arranged laterally offset to the light-exit region and arranged at a distance from the conversion element and at a distance therefrom. A reflector element connected to the housing is arranged above laser apparatuses and designed to reflect the pump light emitted by the laser apparatuses onto the surface region. The assembly element serves the purpose of heat dissipation for the heat produced and, at the same time, substantial thermal decoupling from the conversion element.

Abstract: A method for producing a multiplicity of semiconductor laser chips, the method including growing a semiconductor layer having an active region, forming a multiplicity of laser chip regions, each laser chip region having a part of the active region, a part of the semiconductor layer, a first mirror and a second mirror, applying a sacrificial layer to the laser chip regions, shaping at least one support region per laser chip region within the sacrificial layer, applying an auxiliary carrier to the sacrificial layer, singulating the laser chip regions into semiconductor laser chips on the auxiliary carrier, each semiconductor laser chip having a first region of the semiconductor layer and a second region of the semiconductor layer, the first region and the second region having mutually different extents parallel to the main plane of extent of the semiconductor layer, and the first mirror and the second mirror adjoining the second region, removing the sacrificial layer, and simultaneously transferring at least so

Abstract: A light emitting device includes a radiation source for the emission of electromagnetic radiation and a converter element on which the electromagnetic radiation impinges in a first surface region and which, excited by the impinged electromagnetic radiation, emits visible light into an environment in a second surface region which differs at least partially from the first surface region. The wavelength of the light emitted into the environment differs from the wavelength of the electromagnetic radiation impinged on the converter element. The converter element includes a luminous element including a textile with a converter material. The converter material due to excitation by the electromagnetic radiation with a first wavelength emits visible light with a second wavelength differing from the first wavelength. The radiation source realizes a background illumination for the converter element. The first surface region is formed by a side surface or a back surface of the converter element.

Abstract: A distance measurement performing a signal propagation time-based measurement of a distance from an object located in a sensing field, the unit including an emitter unit having a plurality of emitters for emitting pulses and a receiver unit for receiving echo pulses. The distance measurement unit is configured for measurement such that the echo pulses are associated with the different solid angle segments and at least two of the emitters emit pulses into at least some of the solid angle segments.

Abstract: In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 ?m, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.

Abstract: The invention relates to a lead frame assembly comprising a plurality of regularly arranged lead frames, each of which is suitable for electrically contacting components, comprises at least two lead frame elements distanced laterally by a recess and which are provided as electrical connections of different polarity, and has at least one anchoring element, which is suitable for anchoring a housing body of the component, the lead frame elements being thinned, flat regions of the lead frame, and the at least one anchoring element protrudes from a plane of the lead frame elements in the form of a pillar, and a plurality of connection elements, which in each case connects two lead frame elements of adjacent lead frames to one another, the two connected lead frame elements being provided as terminals of different polarity.

Abstract: A structure comprising a nanoparticle converting electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength range, an interlayer at least partially surrounding the nanoparticle, and an encapsulation at least partially surrounding the interlayer is specified, wherein the interlayer comprises a plurality of first amphiphilic ligands and a plurality of second amphiphilic ligands and the first ligands and the second ligands are intercalated. Furthermore, an agglomerate comprising a plurality of structures, an optoelectronic device as well as methods for producing a structure and an agglomerate are disclosed.

Abstract: A laser component is provided, the laser component including at least one first laser diode, and at least one second laser diode, the first laser diode and the second laser diode each including an active zone in a semiconductor layer, the active zones each extend parallel to the main plane of extension of the respective laser diode, the semiconductor layers each include a first side and a second side facing away from the first side, the first side and the second side each extending parallel to the main plane of extension of the respective laser diode, the second laser diode being arranged on the first laser diode in a vertical direction which is perpendicular to the main plane of extensions of the laser diodes, the first laser diode having a larger extent in its main plane of extension than the second laser diode in its main plane of extension and at least one electrical contact is arranged in a contact region of the first laser diode which is arranged on the side of the first laser diode facing the second la

Abstract: A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.