Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconducting recombination layer for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements on a first side of the recombination layer, at least one second contact element on the first side of the recombination layer, a plurality of semiconducting first connection regions, and at least one semiconducting second connection region. Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

Abstract: In an embodiment a method for producing a plurality of radiation-emitting devices includes providing a plurality of semiconductor chips on a main surface of a carrier, each semiconductor chip for emitting electromagnetic radiation from a radiation exit surface, arranging a lens mold with a plurality of cavities over the carrier, introducing a liquid mold material into the cavities of the lens mold and curing the liquid mold material such that a plurality of molded lenses is generated, wherein the molded lenses directly adjoin the main surface of the carrier, wherein regions of an outer surface of the molded lenses directly adjacent to the main surface of the carrier are free of planar areas, and wherein the carrier includes a plurality of carrier elements, the carrier elements having a first recess in a main surface extending from a side face of the carrier element.

Abstract: Aspects relate to an optoelectronic semiconductor component comprising a semiconductor body having an optically active region designed to emit or detect electromagnetic radiation, a support, a molded body, and a prefabricated optical shielding with a support structure and a diaphragm. The semiconductor body and the molded body are arranged on the front face of the support. The molded body at least partly surrounds the semiconductor body in a lateral direction, and the optical shielding is arranged on the molded body face facing away from the support and projects beyond the molded body in the lateral direction in the direction of the semiconductor body. The diaphragm has an opening which is oriented towards the optically active region. Additionally, an insulating structure is arranged adjacently to the semiconductor body, the insulating structure at least partly surrounding the semiconductor body. Aspects also relate to a method for producing the optoelectronic semiconductor component.

Abstract: An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.

Abstract: A light-emitting window element includes a transparent first carrier layer, a transparent second carrier layer, a substrate with a plurality of light-emitting semiconductor chips arranged thereon, and an optical layer having an adjustable transparency. The substrate with the plurality of light-emitting semiconductor chips and the optical layer are arranged between the first and second carrier layers, and the first and second carrier layers, the substrate with the plurality of light-emitting semiconductor chips and the optical layer form a laminate composite.

Abstract: An optoelectronic component may include at least one light-emitting semiconductor layer sequence and at least one luminescence conversion layer having a transparent conductive oxide and at least one dopant for forming luminescence centers.

Abstract: An optoelectronic semiconductor device may include a carrier having a roughened first main surface and optoelectronic semiconductor chips arranged over the roughened first main surface. The combined surface area of the optoelectronic semiconductor chips is smaller than the surface area of the carrier, and a part of the roughened first main surface is arranged between adjacent optoelectronic semiconductor chips.

Abstract: An optoelectronic component includes a housing. An optical element and a semiconductor laser are arranged along a common optical axis within the housing. The semiconductor laser is designed to generate, by means of a laser process, a light beam having a diffraction-limited divergence such that the light beam is substantially collimated on the optical element.

Abstract: A method for the time-differentiated detection of a spectrum of a test object comprises providing a first conversion dye, which is configured to convert light with a first spectral distribution in the visible range into light with a second spectral distribution in the infrared range. The first conversion dye is excited with a light pulse in the range of the first spectral distribution during a first time period, and a light fraction, reflected or transmitted by the test object, in the range of the first spectral distribution is registered during a first time interval. During a subsequent second time period, a fraction of converted light reflected or transmitted by the test object is registered. According to the invention, the first time interval is selected so that it lies substantially inside a luminescence lifetime for the first conversion dye in the first time period.

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

Abstract: In an embodiment an optical measuring arrangement includes a tube section-shaped hollow body having a central axis extending from a first end face to an opposite second end face of the hollow body, wherein a spiral-shaped hollow light guide is formed in an inner surface of the hollow body by the inner surface being formed at least partially from a light-reflecting material and being formed as a hollow spiral winding around the central axis with a hollow cross section open toward the central axis, a light source arranged at a first spiral end and lying on the first end face of the hollow body, the light source configured to emit a light beam into the hollow spiral so that the light beam is tangentially to its turns and, after a plurality of reflections inside the hollow spiral, emerges from a second spiral end lying on the second end face of the hollow body and a light detector arranged at the second spiral end, the light detector configured to detect the emerging light beam and to output an electronic measure

Abstract: A laser diode chip is described, comprising including: an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact, at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: The invention relates to an optical arrangement comprising at least one spatial modulator for light, comprising at least one light source and comprising at least one projection region, it being possible for the spatial modulator to be irradiated by the light from the light source and the projection region being connected downstream of the spatial modulator in the beam path of the light, characterized in that the light source can be at least temporarily modulated and the modulator can be controlled such that at least one portion of the projection region can be irradiated by the modulated light, and in that the optical arrangement comprises at least one sensor, by means of which a change to the modulatable light owing to a body approaching and/or retreating and/or being arranged at or in the portion can be detected. The invention further relates to a method using the optical device.

Abstract: In an embodiment a method includes providing a substrate having at least one conductor track situated thereon, applying at least one accumulation of an electrically conductive material to a surface of the conductor track, providing a carrier having at least one electrical contact, applying an electrically conductive adhesive to the at least one accumulation of the electrically conductive material and/or the at least one electrical contact and arranging the substrate and the carrier such that the accumulation of the electrically conductive material and the at least one electrical contact are situated opposite and at a distance from one another, wherein the electrically conductive adhesive forms a mechanical and electrical connection between the accumulation of the electrically conductive material and the at least one electrical contact, and wherein an interspace between the at least one accumulation of the electrically conductive material and the at least one electrical contact is filled with the electrically

Abstract: In an embodiment a method includes arranging a first semiconductor wafer above a carrier, wherein the first semiconductor wafer includes a plurality of first semiconductor optoelectronic components, separating a plurality of the first components from the first semiconductor wafer by laser radiation so that the first components fall onto the carrier and attaching the first components separated from the first semiconductor wafer to the carrier, wherein regions of the first semiconductor wafer between adjacent first components are thinned and the first components are covered with a passivation layer before the first components are separated from the first semiconductor wafer.

Abstract: In an embodiment an optoelectronic lighting device includes a support and at least one pixel having three illuminating elements, wherein the illuminating elements of the pixel are arranged on an upper side of the support, each illuminating element having a center point, wherein the illuminating elements are arranged around a central point lying on the upper side of the support such that the center points of the illuminating elements lie on a circular path with a defined radius revolving around the central point, wherein each illuminating element includes a base body with a quadrangular base surface, a corner of the base body of each illuminating element lying at least approximately on a line which extends between the center point of the respective illuminating element and the central point, and/or wherein each illuminating element includes a base body with a square base surface, the illuminating elements being arranged on the upper side of the support such that mutually opposite side surfaces of the base body

Abstract: In an embodiment, the semiconductor device is surface mountable and comprises a light emitting semiconductor chip which comprises electrical contact pads. An opaque base body laterally surrounds the semiconductor chip. An electrical fanning layer contains electrical conductor tracks. Electrical connection pads are used for external electrical contacting of the semiconductor device. The contact pads and the connection pads are located on different sides of the fanning layer. The contact pads are electrically connected to the associated connection pads by means of the fanning layer. The connection pads are expanded relative to the contact pads.

Abstract: A phosphor, wherein the phosphor has a formula: VIII(Y1-x-z-w,Luz,Gdw,Cex)3VI(Al1-yMny)2IV(Al1-2y/3,Si2y/3)3O12, wherein 0<x?0.05, 0<y?0.04, 0<x+z<1, 0?w?0.50 when z?0, 0?w?0.35 when z=0, and 0<x+z+w?1, is described. Furthermore, a light-emitting device and methods for preparing the phosphor and the light-emitting device are described.

Abstract: In an embodiment a component includes a semiconductor chip, a connection member and a carrier, wherein the semiconductor chip is mechanically and electrically connected to the carrier via the connection member, wherein the connection member includes a contiguous metallic connecting layer and a plurality of metallic through-vias extending vertically through the connecting layer and being laterally spaced from the connecting layer by insulating regions, wherein the insulating regions are filled with a gaseous medium and are hermetically sealed, and wherein the gaseous medium contains an insulating gas having a higher breakdown field strength compared to nitrogen, or wherein a gas pressure is less than 1 mbar in the hermetically sealed insulating regions.