Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Abstract: It is proposed to use self-mixing interferometry for determining an absorption. The monitoring device for use in lateral flow testing for detecting presence or amount of an analyte in a liquid includes a housing, the housing including a carrier holder for holding a carrier for transport of the liquid; at least a first light source which is a resonant-cavity light source having a cavity; and an evaluation unit, operationally connected to at least the first light source for detecting a measurement signal. The first light source is structured and arranged to illuminate with light a test range in a test area of a carrier held in the carrier holder; and to couple back into the cavity of the first light source a portion of the light coming back from the test range.

Abstract: The disclosure relates to a halogen lamp replacement, in particular for car headlights, having a carrier plate which is covered on both main surfaces by structured electrically conductive layers, to which at least one respective light-emitting component, in particular at least one respective light-emitting-diode chip, is attached, the carrier plate being designed to dissipate heat generated by the light-emitting components to a heat sink formed by a coupling structure.

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A method for manufacturing a light-emitting device may include producing a support having at least one conductor track on a surface of the support. The method may further include producing a reflective coating directly on the at least one conductor track by means of a film transfer method such that the conductor track is substantially covered by the reflective coating and arranging a light-emitting component on or above the reflective coating. The light-emitting component may be electrically conductively connected to the conductor track(s).

Abstract: An optoelectronic component and a manufacturing method are disclosed. In an embodiment an optoelectronic component includes an optoelectronic semiconductor chip, a housing having a top side and two protrusions on the top side projecting beyond the top side and a transparent structure, wherein the optoelectronic semiconductor chip is arranged between the protrusions, and wherein the transparent structure is at least partially arranged on the top side of the housing between the protrusions and partially above the optoelectronic semiconductor chip.

Abstract: The invention relates to a laser device which includes at least one laser diode having an emission surface via which the laser diode can emit laser light during operation, and a screening element having an entry surface facing the emission surface.

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

Abstract: In an embodiment a LED chip insert for a printed circuit board includes a lead frame in which a number of electrically conductive strings with respective ends are formed by punching, the strings having support surfaces which are configured for mounting on the printed circuit board and which form a common plane, wherein the lead frame has a region formed as a recess with respect to the ends, an injection molded frame including an electrically insulating material and annularly surrounding a surface of the lead frame exposed within the region formed as the recess facing the ends of the strings, and thereby effecting an overall trough-like structure; and at least one LED chip which is placed in the region formed as the recess and has a first electrical contact terminal and a second electrical contact terminal, the first electrical contact terminal being electrically conductively connected to a first one of the strings and the second electrical contact terminal being electrically conductively connected to a second

Abstract: A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

Abstract: A driver circuit for low voltage differential signaling, LVDS, includes a phase alignment circuit including an input configured to receive an input signal, a first output configured to provide an internal signal as a function of the input signal, and a second output configured to provide an inverted internal signal, which is the inverted signal of the internal signal, and an output driver circuit coupled to the phase alignment circuit, the output driver circuit including a first input configured to receive the internal signal, a second input configured to receive the inverted internal signal, a first output configured to provide an output signal as a function of the internal signal and a second output configured to provide an inverted output signal which is the inverted signal of the output signal. Therein the phase alignment circuit is configured to provide the inverted internal signal with its phase being aligned to a phase of the internal signal.

Abstract: A low-dropout regulator for low voltage applications includes a buffer circuit being arranged between an output terminal of an error amplifier and a control node of a pass device. The buffer circuit includes a driver having a first transistor being embodied as an NMOS transistor. The output terminal of the error amplifier is coupled to the control node of the first transistor. The control node of the pass device is coupled to an internal node of a first current path including the first transistor. The low-dropout regulator has high load capability, even if an input supply voltage is very low.

Abstract: A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement.

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Abstract: Various implementations disclosed herein include a method for operating a LIDAR sensor, comprising repeatedly performing measurements in a respective measurement time window (M), at the beginning of which at least one measurement light pulse (A) having at least one predefined wavelength is emitted by the LIDAR sensor, and determining whether a light pulse (A?) having the at least one predefined wavelength is detected by the LIDAR sensor within the measurement time window (M), wherein a time interval (D1, D2, D3) between two consecutive measurement time windows (M) is varied.

Abstract: A lighting assembly is provided with a housing defining a cavity that is aligned along a longitudinal axis. A light source is supported by the housing and aligned with the longitudinal axis. A lens is supported by the housing to collimate light from the light source. An image plate with a plurality of apertures formed through passes a portion of the collimated light as light segments. An exit lens includes a first series of optics arranged on a first plane spaced apart from the image plate at a first focal distance to focus the light segments at a first distance from the housing, and a second series of optics arranged on a second plane spaced apart from the image plate at a second focal distance to focus the light segments at a second distance from the housing. The second focal distance is greater than the first focal distance.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al2O3 single crystals, and wherein the conversion element comprises at least one groove.