Abstract: A current mirror arrangement includes an input stage with a series connection of an input mirror transistor and an input cascode transistor between supply terminals. A buffer stage is configured to generate an input control voltage based on an input voltage for a gate terminal of the input mirror transistor, to generate an intermediate control voltage at a replica terminal based on the input voltage and to generate a compensation control voltage based on the input control voltage, the buffer stageincluding a compensation current mirror with an input side connected to a feedback terminal and with an output side being connected to the replica terminal.

Abstract: Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps:—providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation,—producing a first recess in the semiconductor layer sequence, which fully penetrates the active region,—producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Abstract: The invention relates to an optoelectronic laser device which includes: a first set of edge-emitting laser diodes, the first set of edge-emitting laser diodes having one or more first laser diodes, each of which has a first light emission region for laser light on a side face, and a second set of edge-emitting laser diodes, the second set of edge-emitting laser diodes having one or more second laser diodes, each of which has a second laser emission region for laser light on a side face, wherein the side faces of the first and second laser diodes lie at least substantially in the same plane, wherein a particular second laser diode (21b, 21d, 21f) is allocated to a particular first laser diode, and wherein the light emission regions of the first and of the allocated second laser diode are arranged at a distance from each other which is smaller than 10 ?m, preferably smaller than 5 ?m, further preferably smaller than 3 ?m, and even further preferably smaller than 2 ?m.

Abstract: Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).

Abstract: An image element is disclosed having first and second supply terminals, a light emitting semiconductor component, a driver circuit comprising a driver transistor, a storage capacitor, and a switching transistor, and a trigger circuit comprising an output transistor and a control capacitor. The light emitting semiconductor component and the driver transistor are arranged in series with each other and between the first supply terminal and the second supply terminal. A first electrode of the storage capacitor is coupled to a control terminal of the driver transistor. The switching transistor is configured to switch on and off a current flow through the light emitting semiconductor component. A first electrode of the control capacitor is connected to a control terminal of the output transistor. A first terminal of the output transistor is connected to a control terminal of the switching transistor. Furthermore, a method for operating an image element, in particular such an image element, is disclosed.

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Abstract: In an embodiment a method for manufacturing an optoelectronic semiconductor device includes providing a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, forming a mask layer having a plurality of recesses on the coupling-out surface on the semiconductor body, depositing metallic separators in the recesses and applying a wavelength conversion element to the coupling-out surface of the semiconductor body such that the metallic separators are at least partially embedded therein.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: A method for electrically contacting components in a semiconductor wafer includes providing a flexible board comprising a first main surface on which a plurality of conductor tracks are arranged, positioning the board with respect to a semiconductor wafer such that the first main surface of the board faces the semiconductor wafer, the board is bent and pressed onto the semiconductor wafer in such a way that contact elements of a plurality of components arranged in a row in the semiconductor wafer come into contact with the conductor tracks, and electrical signals are applied to the components through the conductor tracks.

Abstract: In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter.

Abstract: A tracking system for tracking objects within a field of view is disclosed. The field of view may include a first zone and an adjacent zone of interest where at least two gates are associated with respective sides of the first zone within the field of view. The first camera is configured to detect when an object crosses one of the at least two gates and track the object throughout the first zone and the zone of interest. The tracking system is configured to generate a first event message in response to the object being tracked from one of the gates into the zone of interest and subsequently leaving the first zone through a dedicated gate of the at least two gates.

Abstract: A nanoparticle is specified. The nanoparticle comprises a nanocrystal configured to convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, a first encapsulation comprising pores which reach into or through the first encapsulation, and a second encapsulation which is different from the first encapsulation, wherein the second encapsulation abuts at least one of the pores. Furthermore, a structure comprising a plurality of nanoparticles and a method for producing nanoparticle is specified.

Abstract: An optical measuring system includes a multiplicity of apparatuses for emitting electromagnetic radiation, said apparatuses being configured to emit a signal simultaneously. The optical measuring system further includes a modulation device for altering a frequency of the respectively emitted electromagnetic radiation and a multiplicity of detectors which are suitable for detecting a superposition signal, which comprises the emitted electromagnetic radiation and electromagnetic radiation reflected at an object, and a measuring device, wherein the measuring device is suitable for being successively connected to each individual detector of the multiplicity of detectors.

Abstract: The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.

Abstract: A sensing system comprising a light filtering apparatus configured to pass a first wavelength of light corresponding to an emission spectrum characteristic of Mercury. The sensing system comprises a sensor configured to receive light passed by the light filtering apparatus and produce a sensor response that is indicative of the light passed by the light filtering apparatus. The sensing system comprises a processor configured to use the sensor response to distinguish between light emitted by a fluorescent light source and light emitted by a light emitting diode.

Abstract: In one embodiment, the optoelectronic semiconductor component includes at least one optoelectronic semiconductor chip for generating radiation and a housing, in which the at least one optoelectronic semiconductor chip is hermetically encapsulated. The housing includes a housing cover which is secured to a housing main part by a connection means. The housing additionally includes a gas exchange channel which is hermetically sealed by a seal.

Abstract: The invention relates to a method for producing optoelectronic components. The invention comprises: provision of a metal substrate, the substrate having a front side and a rear side opposite the front side; front-side removal of substrate material such that the substrate comprises substrate sections protruding in the region of the front side and recesses arranged there between; formation of a plastic body adjacent to substrate sections; arrangement of optoelectronic semiconductor chips on substrate sections; rear-side removal of substrate material in the region of the recesses, such that the substrate is structured into separate substrate sections; and performance of a separation process. The plastic body is divided into separate substrate sections and individual optoelectronic components with at least one optoelectronic semiconductor chip are formed. The invention also relates to an optoelectronic component.

Abstract: An arrangement for operating a diode array includes a plurality of LEDs. Each LED is assigned a respective sensor element which is configured to detect a characteristic value representative of a luminous flux of the respective LED. The arrangement also includes a respective supply input for providing a current for light-emitting operation of the respective LED. The arrangement further includes in each case a control unit which is coupled on the input side to the respective supply input and the respective sensor element and on the output side to the respective LED and is configured to control the current for light-emitting operation of the respective LED as a function of the corresponding characteristic value. The arrangement additionally includes a respective supply input for providing a current for light-emitting operation of the respective LED.

Abstract: An optoelectronic light emitting device includes a plurality of programmable pixels arranged in a matrix of rows and columns, each pixel including at least one optoelectronic semiconductor component, and programming device configured to program the pixels in a plurality of successive time intervals. A row pattern including a subset of the rows of the matrix is given. The programming device is configured to program the pixels of those rows per time interval which are comprised by the row pattern. The row pattern is shifted by at least one row per time interval.