Abstract: The invention relates to a method for producing a semi-conductor laser arrangement, in which a first laser diode chip is arranged on a first intermediate support. A second laser diode chip is arranged on a second intermediate support. The second laser diode chip with the second intermediate support is arranged on the first intermediate support, the second intermediate support being arranged on a side of the second laser diode chip facing away from the first intermediate support. The invention furthermore relates to a semi-conductor arrangement.

Abstract: A method for assigning light sensors for regulating a lighting system includes switching the lighting of the lighting system into a first switching state such that a first lighting group emits light with a predetermined luminous flux, switching the lighting of the lighting system into a second switching state such that the first lighting group emits light with a reduced luminous flux by comparison with the predetermined luminous flux or emits no light, and measuring a luminance of the light reflected by a reference surface respectively assigned to the light sensors with the aid of the light sensors to determine a first measurement value in the first switching state and a second measurement value in the second switching state. The method may further include assigning a sensor to the first lighting group based on a comparison of difference values formed for each of the light sensors, and storing the assignment.

Abstract: A placement device for placing optoelectronic components on electrical lines includes a holding device for holding at least one electric line extending in a longitudinal direction, and an application device for arranging optoelectronic components on the at least one electrical line.

Abstract: An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.

Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm?2.

Abstract: An image element is disclosed having first and second supply terminals, a light emitting semiconductor component, a driver circuit comprising a driver transistor, a storage capacitor, and a switching transistor, and a trigger circuit comprising an output transistor and a control capacitor. The light emitting semiconductor component and the driver transistor are arranged in series with each other and between the first supply terminal and the second supply terminal. A first electrode of the storage capacitor is coupled to a control terminal of the driver transistor. The switching transistor is configured to switch on and off a current flow through the light emitting semiconductor component. A first electrode of the control capacitor is connected to a control terminal of the output transistor. A first terminal of the output transistor is connected to a control terminal of the switching transistor. Furthermore, a method for operating an image element, in particular such an image element, is disclosed.

Abstract: A method for the time-differentiated detection of a spectrum of a test object comprises providing a first conversion dye, which is configured to convert light with a first spectral distribution in the visible range into light with a second spectral distribution in the infrared range. The first conversion dye is excited with a light pulse in the range of the first spectral distribution during a first time period, and a light fraction, reflected or transmitted by the test object, in the range of the first spectral distribution is registered during a first time interval. During a subsequent second time period, a fraction of converted light reflected or transmitted by the test object is registered. According to the invention, the first time interval is selected so that it lies substantially inside a luminescence lifetime for the first conversion dye in the first time period.

Abstract: An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.

Abstract: A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

Abstract: A method and an optical sensor are described herein. The optical sensor may include a communication interface for receiving data from a control unit and for transmitting data to the control unit, a storage unit with at least one register for storing data, and a CRC generator for generating a CRC checksum. The optical sensor may be configured in such a way that when data stored in the storage unit is to be transmitted to the control unit, the communication interface receives from the control unit a device address specific to the optical sensor and an address of a register in which the data to be transmitted is stored. The CRC generator may be initialized using the device address received from the communication interface and/or the register address received from the communication interface, before the CRC generator generates a CRC checksum for the data to be transmitted.

Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC?N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.2 and 0?m<0.

Abstract: An interference filter comprises a substrate, a filter stack and at least one absorption layer. The filter stack comprises alternating layers of optical coatings with different refractive indices arranged on the substrate. The at least one absorption layer is comprised of an optically absorbing material which is arranged on the substrate.

Abstract: The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in p

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Abstract: In one embodiment, the substrate is configured for a semiconductor laser diode and comprises a plurality of substrate layers. The substrate layers include insulating layers and carrier layers, which are thicker. A plurality of electrical contact surfaces, which are configured for the semiconductor laser diode, a laser capacitor and a control chip, are located on an assembling side of a first, uppermost substrate layer, which is an insulating layer. Electrical conductor tracks, which electrically interconnect the contact surfaces, are located on the one hand between the first insulating layer and a second insulating layer, and on the other hand between the second insulating layer and a third substrate layer, which is preferably an insulating layer.

Abstract: An optical module (100) for reading a test region of an assay. The optical module comprises: a first light source (101) for illuminating the test region of the assay; an optical detector (103), comprising an optical input for receiving light emitted from the test region and an electrical output; a substrate (104) for mounting the first light source (101) and the optical detector (103); and a housing (105) comprising: a first opening (106) for providing a first optical path from the first light source (101) to the test region (103); wherein the housing (105) and the substrate (104) enclose and positionally align the first source (101) and the optical detector (103) relative to the first opening (106). The housing (105) may comprise one or more legs (108), such as a flexible hook portion which secures the housing (105) to the substrate (104) with a snap-fit engagement, extending from a first and/or second outer surface of the housing (105) in a vertical direction.

Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.