Abstract: A europium-activated barium aluminate phosphor is described wherein the phosphor is doped with tetravalent ions of Hf, Zr, or Si. Preferably, the phosphor is represented by (Ba1?xEux)MgAl10O17:(Hf,Zr,Si)y where 0.05?x?0.25 and 0<y?0.05. The tetravalent dopant ions are shown to enhance the stability of the phosphor in UV/VUV applications.

Abstract: A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).

Abstract: An embodiment of the present invention pertains to an electrode that is substantially transparent and conductive and that is incorporated within an organic electronic device. This electrode includes a first layer and a second layer that is on the first layer. The electrode optionally includes a third layer on the second layer. The first layer, the second layer, and the third layer are exposed to a medium and reactions between various combinations of the first layer, the second layer, the third layer, and the medium produce the substantially transparent and conductive electrode.

Abstract: The invention relates to a luminescence conversion led based illumination deice that emits primarily radiation in the range of from 370 and 430 nm of the optical spectrum (peak wavelength). Said radiation is converted to radiation having a longer wavelength using three luminescent substances that emit in the red, green and blue range.

Abstract: A thallium-free metal halide fill for ceramic metal halide lamps is provided wherein the fill comprises mercury, sodium iodide, an alkaline earth iodide selected from calcium iodide, strontium iodide, barium iodide, or combinations thereof, and a rare-earth iodide selected from cerium iodide, dysprosium iodide, holmium iodide, thulium iodide, or combinations thereof. In a preferred embodiment, the fill allows dimming of discharge lamps containing same to about 60% of rated power without substantially affecting the color of the emitted light.

Abstract: For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Abstract: A high intensity discharge lamp (10a) contains an unshrouded arc tube (14a) mounted in an outer envelope (12a). The outer envelope is surrounded by a protective device (50). The device (50) comprises a translucent pocket (52) constructed of a fine mesh having a strength component sufficient to retain any shards from the outer envelope or arc tube in the event of an arc tube burst and a temperature component sufficient to handle arc tube shards that can have a temperature of ?1000° C.

Abstract: A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material.

Abstract: A casting resin compound as an assembly and encapsulation material for electronic and optoelectronic component parts, modules and components, for example for casting out optoelectronic components on the basis of acid anhydride-curable epoxy compounds, particularly bisphenol A-diglycidyl ether, contains multi-functional epoxy novolak resins, particularly an epoxy cresol novolak. This casting resin compound exhibits a clearly increased glass transition temperature, is suitable for mass-production, exhibits no health deteriorations, and supplies SMT-capable products that can be utilized in the automotive sector.

Abstract: A passive radiation optical system includes a one-piece module having a plurality of individual optical components wherein the one-piece module is radiation-permeable or reflective. The optical components are connected to one another via predetermined breaking points for forming a radiation optical system module. In addition, the one-piece module can be separated to form optical components that include one or more individual optical components. The one-piece module is particularly for use with light emitting diodes. The passive radiation optical system module is suitable for mass production, and because of its modular principle, it enables flexible adaptation to the shape and size of the desired lighting device, such as lighted advertising or safety lighting.

Abstract: A vehicle headlamp (10) has a first light source (12) for illuminating an area forward of the light source (12). The first light source (12) is preferably a filamented tungsten halogen capsule. The first light source (12) is arrayed along a longitudinal axis (14) and emits substantially white light. A second light source (16) in the form of a plurality of light emitting diodes is arrayed about the first light source (12), and the second light source (16) emits light in directions substantially normal to the longitudinal axis (14), for example, along an axis (16a) for providing essentially aesthetic illumination. The aesthetic illumination can be used with or without the first light source being illuminated.

Abstract: An LED lamp and a method of making an LED lamp in which the lamp includes a heat conductive post with a base and a top, an insulative body within the post that includes plural wireways and plural electrical leads that each extend through a different one of the wireways and whose ends emerge from the top and the base of the post, a head with plural LED assemblies on the top of the post, and a circuit board for the LED assemblies at the base of the post, the leads being connected to respective LED assemblies and to the circuit board. During manufacture, the leads are mounted in the wireways of the insulative body and the assembled body is inserted into the post.

Abstract: A PAR lamp (10) having a tungsten halogen capsule (12) mounted in a hard glass, pressed reflector (14). A hard glass lens (16) is bonded to the envelope (14) by an adhesive such as epoxy or silicone. More specifically, the envelope (14) defines a cavity (18) having a base (20) and an opening (22) defined by an edge (24), the opening (22) being opposite the base (20). The capsule (12) is mounted in the base (20) and contains a filament (26) that is designed for operation at greater than 2700K. The lens (16) is preferably a borosilicate glass and contains between 0.3 and 5 weight percent neodymium.

Abstract: In a two-pole SMT miniature housing in leadframe technique for semiconductor components, a semiconductor chip is mounted on one leadframe part and is contacted to a further leadframe part. The further leadframe part is conducted out of the housing in which the chip is encapsulated as a solder terminal. No trimming or shaping process is required and the housing is tight and is capable of further miniaturization. The solder terminals as punched parts of the leadframe are conducted projecting laterally from the housing sidewalls residing opposite one another at least up to the housing floor which forms the components' mounting surface. The chip mounting surface and the components' mounting surface form a right angle with one another.

Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.

Abstract: The inventive white-light emitting luminescent conversion LED uses a chlorosilicate luminous substance which is doped with europium in addition to containing Ca and Mg and a garnet rare-earth substance, especially Y and/or Tb. This results in high quality colour reproduction and highly constant lighting properties at various temperatures.

Abstract: A moisture-resistant electroluminescent phosphor is provided wherein the individual phosphor particles have a first coating of an inorganic moisture-resistant coating and a second coating of an organic moisture-resistant coating. The process for making the moisture-resistant phosphor comprises applying a first layer of an inorganic moisture-resistant coating to individual particles of an electroluminescent phosphor to form a first-coated phosphor, substantially isolating said first-coated phosphor from contact with atmospheric oxygen and moisture, and applying a second layer of an organic moisture-resistant coating to the first-coated phosphor to form a second-coated phosphor.

Abstract: The invention proposes an arrangement of luminescent materials for excitation by means of a radiation source and involving the use of a luminescent material having a Ce-activated garnet structure A3B5O12, in which the first component A contains at least one element from the group consisting of Y, Lu, Sc, La, Gd, Sm and Tb and the second component B represents at least one of the elements Al, Ga and In, and a plurality of the luminescent materials are mixed together.

Abstract: The invention relates to a method for producing an electrical leadframe (10), in particular for a light-emitting diode component, having at least one first electrical connection conductor (2) and at least one second electrical connection conductor (3). The method includes a) production of a layer composite comprising an electrically insulating carrier layer (101) and an electrically conductive connection conductor layer (102), b) patterning of the carrier layer (101) in such a way that at least one contact-making window (7) toward the connection conductor layer (102) is produced in said carrier layer, and c) patterning of the connection conductor layer (102), in such a way that the first electrical connection conductor (2) and the second electrical connection conductor (3) are produced, at least one of which can be electrically connected through the contact-making window (7).

Abstract: An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.