Abstract: A radiation-emitting and/or radiation-receiving semiconductor component in which a radiation-emitting and/or radiation-receiving semiconductor chip is secured on a chip carrier part of a lead frame. The chip carrier part forms a trough in the region in which the semiconductor chip is secured wherein the inner surface of the trough is designed in such a way that it constitutes a reflector for the radiation emitted and/or received by the semiconductor chip.

Abstract: A method of removing contaminants from a double-ended arc discharge tube includes the steps of providing at least one capillary channel at each end of the tube, where the ends of the tube are sealed closed except at the capillary channels, and introducing a flushing gas into the tube through one capillary channel at one end of the tube and removing the flushing gas and contaminants through another capillary channel at another end of the tube. During manufacture, the double-ended arc discharge tube has a sealed electrode and an open capillary channel at each end of the tube.

Abstract: An optically pumped semiconductor laser device having a substrate (1) having a first main area (2) and a second main area (3), with at least one pump laser (11) being arranged on the first main area (2). The semiconductor laser device comprises a vertically emitting laser (4) having a resonator having a first mirror (9) being arranged on the side of the first main area (2) and a second mirror (20) being arranged on the side of the second main area (3) of the substrate (1).

Abstract: A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

Abstract: A signaling device includes a light source and a Fresnel optical system. Constructed in the form of ellipses on its rear side, the Fresnel optical system has defocusing lenses that form elongated focal areas in the focal plane. Despite the use of a light source of small lateral extent, the signaling device has a radiation characteristic with a large aperture angle.

Abstract: A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

Abstract: A low insertion force seating grommet assembly (10a) has a hollow body (12) arrayed along a longitudinal axis (14). The body (12) has a wide end (16) and a narrow end (18) connected by an intermediate portion (20). The narrow end (18) has a cylindrical aperture (18a) and the wide end (16) has a cup-shaped aperture (16a). A flange (22) surrounds the wide end (16) and is provided with a wall-opening engaging portion (24). Longitudinally extending relief grooves (26) are formed on the internal surface (28) of the cup-shaped aperture (18a). A cable (32) is frictionally engaged in the cylindrical aperture and penetrates the cup-shaped aperture. A cover (30) closes the cup-shaped aperture. The cable enters the cover along the longitudinal axis and exits the cover at an angle of 90 degrees relative to the longitudinal axis.

Abstract: Superior color stability in a miniature HID lamp can be achieved by reducing the size of the lamp, reducing the mercury concentration, reducing the salt concentration and increasing the heat to the lamp seal. In general the result concentrates the salts in the central, lower section of the lamp envelope and displaces them from the hot spot and electrode roots were deleterious chemical reactions can occur that are believed to subsequently reduce lamp performance.

Abstract: An optoelectronic semiconductor chip, comprising a plurality of semiconductor function regions (10) arranged on a common carrier layer (1, 7), at least one of the semiconductor function regions being a defect region (12), and a contact structure (18) for making electrical contact with the optoelectronic semiconductor chip. The contact structure is electrically conductively connected to at least one of the semiconductor function regions, and the contact structure is adapted to be electrically separated, or it is electrically separated, from the defect region.

Abstract: An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

Abstract: A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

Abstract: A radiation-emitting and/or -receiving semiconductor component comprising a semiconductor body (1), which has an active zone (2) provided for radiation generation or for radiation reception, a lateral main direction of extent and a main area, and also a protective layer (6) arranged on the main area and a contact (5) arranged on the main area, the protective layer (6) being spaced apart from the contact in the lateral direction. A method for the application of a contact to a semiconductor body (1) is also disclosed.

Abstract: In an embodiment of the invention, an electronic device includes an interfacial layer with traps. This interfacial layer is between an electrode and an organic layer, and if the electrode was adjacent to the organic layer, the energy barrier between these two layers is such that the current through the organic layer is limited by charge injection into this layer rather than the transport properties of the organic layer. The traps are used to accumulate charges of one charge type (e.g., either electrons or holes) within the interfacial layer. By accumulating charges, the bands of the interfacial layer are bent so that charges can tunnel from the electrode to the organic layer thus increasing the efficiency of the electronic device and allowing organic layers to be used within an electronic device that otherwise would be too inefficient for use in that device.

Abstract: A mount assembly (10) for an arc discharge vessel has a glass stem (12) having a longitudinal axis (14) that includes a flare (16) with a barrel portion (18) and a seal portion (20) containing at least two relatively rigid stem-leads, (22 and 24), projecting therefrom A relatively rigid wire frame (26) is provided with the frame (26) having a distal end (28) and a proximal end (30). A loop portion (32) is formed at the proximal end (30) and has a diameter substantially equal to the diameter of the barrel (18) and is affixed thereto. The distal end (28) of the wire frame (26) extends away from the barrel portion in a direction transverse to the plane of the loop portion (32). An arc discharge vessel (34, 34a), having a substantially linear configuration and having electrode connections (36) and (38) extending from the ends thereof is positioned on the longitudinal axis (14) and is affixed to the wire frame.

Abstract: A semiconductor laser has an antiresonant waveguide (10), which is formed by a layer sequence applied to a substrate (1). The layer sequence has outer waveguide regions (2, 8), reflection layers (3, 7), and a waveguide core (11) with an active layer (5). With this structure, semiconductor lasers with only slight vertical beam divergence and with a large beam cross section can be produced.

Abstract: A tungsten disulfide powder comprised of macro-spherical particles of tungsten disulfide having an average particle diameter of from about 5 to about 50 micrometers is prepared by successively treating spray-dried powders of ammonium metatungstate with heat in air and sulfidizing the resultant tungsten trioxide in a carbon disulfide-containing atmosphere at about 750° C. The tungsten disulfide powder may also be formed to have a bimodal particle size distribution of the macro-spherical particles and smaller, dispersed micro- to submicron-sized fine particles.

Abstract: A light-emitting power semiconductor device is placed on a metillic substrate structure with the formation of a good heat-transfer contact, in which a plastic protective body surrounds the power semiconductor device, leaving exposed a light exit region in the nature of a cap.

Abstract: A method and system for controlling lighting in a space reduces energy consumption of the light sources by changing at least one of the color rendering index (CRI) and the correlated color temperature (CCT) while maintaining illumination levels. Preferably, the method and system sense movement of people in the space relative to light sources that light the space, and automatically and individually adjust plural solid state lighting devices that form each of the respective light sources to a first lighting condition when people are in a first position, wherein the lamps respectively emit light of a first illumination level and a first CRI at a first electrical power level, and to a second lighting condition when people are in a second position, wherein the light sources respectively emit light of the first illumination level and a smaller CRI than the first CRI and at a lower electrical power level than the first electrical power level.

Abstract: A solid-state light source (10) that is compatible with the existing sockets normally reserved for filamented lamps (100). The solid-state light source (10) comprises a hollow base (12) formed to mechanically and electrically adapt to an existing socket normally reserved for lamps (100). A sub-assembly (14) is adapted to cooperate with and fit into the hollow base (12). The sub-assembly (14) comprises a circuit board (16) with a plurality of solid-state light sources (18) mechanically and electrically connected to one side (20) of the circuit board. Two electrical contacts (22, 24) are positioned on the other side (26) of the circuit board for connection to an electrical circuit. A light pipe (28) covers the plurality of light sources (18) and extends away therefrom to a terminal end (30).