Abstract: A projection lamp for illumination includes a pump radiation unit configured to emit pump radiation, a phosphor element for the at least partial conversion of the pump radiation into a conversion light, and a micromirror array having a multiplicity of micromirror actuators which are arranged in the form of a matrix. The projection lamp is set up such that, during operation, the phosphor element is irradiated by the pump radiation from the pump radiation unit. The conversion light which is thereupon emitted by the phosphor element at least partially makes up an illumination light, which illumination light is guided for adjusting a light distribution over the micromirror actuators. The micromirror actuators are illuminated inhomogeneously with the illumination light at respective times to support the light distribution that is adjusted using the micromirror array.

Abstract: A controller dynamically identifies a switching frequency based power converter output load condition, input voltage, and/or temperature. The controller updates the operating switching frequency to the identified target switching frequency when the identified switching frequency is sufficiently different than a current operating switching frequency of the power converter. In this respect, switching frequency may be dynamically controlled to strike a balance between avoiding saturation of inductive elements and efficient operation of a power converter. A controller may also dynamically control switching frequency by having a thermo resistor incorporated into circuitry that determines switching frequency such that an increase in temperature beyond the threshold temperature directly causes a decrease in switching frequency.

Abstract: Enclosures with grommetless strain relief are provided, each including a base and a cover. The base has a bottom and four sidewalls arranged to provide an open box-like structure. A first of the sidewalls of the base is configured with a wire routing slot at its perimeter. The cover has a top and four sidewalls arranged to provide an open box-like structure configured to couple with the base, so as to provide a strain relief for an electrical wire passing through the wire routing slot. The wire is pressed against a length of the first sidewall of the base by a first sidewall of the cover. The enclosure may include other features, such as rounded edges in the wire routing path, a wire guide and/or strap to inhibit wire movement between the first sidewalls, and/or one or more locking mechanisms configured to secure the cover to the base.

Abstract: A module may include a housing in which a radiation source is arranged, where the radiation source is configured to emit an excitation radiation by virtue of a conversion element disposed downstream of the radiation source, and the conversion element is configured to convert, at least in part, the excitation radiation. The conversion element may be fastened to a holding section of the housing. The holding section may be encompassed by a positioning element. A receptacle of a component may be adapted to the positioning element. The component may be downstream of the module. The housing may be positionable in the receptacle in order to position the component with respect to an impingement region of the excitation radiation on the conversion element.

Abstract: A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening.

Abstract: Techniques are disclosed for programming a luminaire position for light-based communication (LCom) luminaires within an array of luminaires using position information provided by passing mobile computing devices. This position information can be received as, for example, as a specific coordinate (e.g., x-y coordinates of a grid-based map) or as movement data of the mobile computing device relative to an initial known reference location. The disclosed techniques can be used, for example, to reduce the time, labor, and expense associated with programming and re-programming a luminaire with a luminaire position, and to increase the flexibility of navigation system installations. In some cases, the disclosed techniques can be used, for example, to improve the precision of a luminaire position programmed into a newly installed luminaire.

Abstract: Squared-off semiconductor coatings for quantum dots (QDs) and the resulting quantum dot materials are described. In an example, a semiconductor structure includes a quantum dot structure having an outermost surface. A crystalline semiconductor coating is disposed on and completely surrounds the outermost surface of the quantum dot structure. The crystalline semiconductor coating has a geometry with squared-off ends.

Abstract: An optoelectronic semiconductor chip (1) is provided which has a semiconductor body comprising a semiconductor layer sequence (2) with an active region (20) provided for generating and/or receiving radiation, a first semiconductor region (21) of a first conduction type, a second semiconductor region (22) of a second conduction type and a cover layer (25). The active region (20) is arranged between the first semiconductor region (21) and the second semiconductor region (22) and comprises a contact layer (210) on the side remote from the active region. The cover layer (25) is arranged on the side of the first semiconductor region (21) remote from the active region (20) and comprises at least one cut-out (27), in which the contact layer (210) adjoins the first connection layer (3). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip (1). A semiconductor layer sequence (3) is provided, comprising a first semiconductor layer (3a) and a second semiconductor layer (3b). Furthermore, a first contact layer (5a) is provided which extends laterally along the first semiconductor layer (3a) and electrically contacts same. A third semiconductor layer (7) is applied onto a first contact layer (5a) face facing away from the semiconductor layer sequence (3). A recess (8) is formed which extends through the third semiconductor layer (7), the first contact layer (5a), and the first semiconductor layer (3a) into the second semiconductor layer (3b). A passivation layer (9) is applied onto a third semiconductor layer (7) face facing away from the semiconductor layer sequence (3). At least one first (9a) and at least one second passage opening (9b, 9c) are formed in the passivation layer (9).

Abstract: Techniques are disclosed for establishing communication between light-based communication (LCom) luminaires within a navigation array of luminaires and mobile computing devices having varying components and processes using an encoding scheme received from passing mobile computing devices. The encoding scheme is a set of rules for encoding and generating a visible-light communication (VLC) signal so that the mobile computing device may recognize VLC signals broadcast by the luminaire. In accordance with some embodiments, the disclosed techniques can be used, for example, to accommodate future computing devices that may incorporate different camera technologies and different processing algorithms to process waveforms in the VLC signals.

Abstract: A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.

Abstract: A lighting device includes a carrier, in which a laterally extended cavity is formed, a light source arranged alongside the cavity and serving for generating light that propagates from the light source through the cavity, a fluid reservoir for receiving a fluid, and a microfluid pump, which is designed for shifting the fluid received in the fluid reservoir between the fluid reservoir and the cavity.

Abstract: A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.

Abstract: The invention relates to an organic light-emitting component which has an organic functional layer stack (3) having at least one light-emitting layer, which is designed to generate light during operation of the component, a transparent first electrode (2) and a transparent second electrode (4), which are designed to inject charge carriers into the organic functional layer stack (3) during operation, and a heat distribution layer (9), which is applied over the electrodes (2, 4) and the organic functional layer stack (3) and which has at least one plastic layer (10) and a highly heat conductive layer (11), wherein the heat distribution layer (9) has at least one transparent sub-region (91) and at least one non-transparent sub-region (92).

Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

Abstract: A method of producing a carrier substrate for an optoelectronic semiconductor component includes: providing a leadframe including a first electrically conductive contact section and a second electrically conductive contact section, and injection molding a housing including a housing frame embedding the leadframe by an injection-molding material free of epoxy such that the leadframe embedded in the housing frame of the injection-molded housing forms a carrier substrate for an optoelectronic semiconductor component.

Abstract: A method of Light-based Communication (LCom) using camera frame-rate based light modulation is provided. The method includes receiving light having modulated light properties that vary at a first frequency from a LCom-enabled luminaire by an image capture device using a global shutter image capture process, comparing light properties received at the image capture device over sequential image capture instances, and determining, from the compared light properties, data encoded by the modulated light.

Abstract: An optoelectronic device includes a covering layer, a first electrode, a functional layer stack arranged between the covering layer and the first electrode and a plurality of spacers, wherein the functional layer stack has an organic active layer that generates electromagnetic radiation; the first electrode has conductor tracks with branching points, the spacers are each arranged on one of the branching points, and the functional layer stack is arranged in places between the covering layer and the spacers.

Abstract: According to the present disclosure, an optoelectronic assembly is disclosed with at least one optoelectronic component, and a sensor circuit. The sensor circuit includes at least one energy supply circuit and an ascertainment circuit having at least one energy storage unit and a detection unit. The ascertainment circuit and the at least one optoelectronic component are electrically connected to one another in parallel. The at least one energy supply circuit is configured to supply electrical energy to the at least one optoelectronic component and the energy storage unit. The energy stored in the energy storage unit is supplied independently of the electrical energy supplied to the at least one optoelectronic component. The ascertainment circuit is configured such that the detection unit detects a change of the electrical energy stored in the energy storage unit depending on a change of the energy stored in the at least one optoelectronic component.

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.