Abstract: An extension of conventional IC fabrication processes to include some of the concepts of flip-chip assemblies while producing a final “non-flip chip” circuit structure suitable for conventional packaging or for direct usage by customers. Multiple IC dies are fabricated on a semiconductor wafer in a conventional fashion, solder bumped, and singulated. The singulated dies are then flip-chip assembled onto a single tile substrate of thin-film material which has been patterned with vias, peripheral connection pads, and one or more ground planes. Once dies are flip-chip mounted to the thin-film tile, all of the dies on the entire tile may be probed using automated testing equipment. Once test probing is complete, the dies and tile are singulated into die/tile assemblies.

Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit standby current during operation in the standby mode while allowing a quick recovery to normal operating conditions of the amplifier. Biasing an input transistor of the stacked transistors can be obtained by using a replica stack circuit.

Abstract: Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.

Abstract: An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

Abstract: Devices and methods for implementing an RF integrated circuit device operatively configured to provide the function of RF power splitter with programmable output phase shift are described. Configurable and adjustable phase shift units for use in such IC device are also described.

Abstract: The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from an interface of the polycrystalline silicon layer with the monocrystalline substrate layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon layer at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the at least a first portion.

Abstract: Methods and apparatuses for use in tuning reactance are described. Open loop and closed loop control for tuning of reactances are also described. Tunable inductors and/or tunable capacitors may be used in filters, resonant circuits, matching networks, and phase shifters. Ability to control inductance and/or capacitance in a circuit leads to flexibility in operation of the circuit, since the circuit may be tuned to operate under a range of different operating frequencies.

Abstract: Methods and devices are described for compensating an effect of aging due to, for example, hot carrier injection, or other device degradation mechanisms affecting a current flow, in an RF amplifier. In one case a replica circuit is used to sense the aging of the RF amplifier and adjust a biasing of the RF amplifier accordingly.

Abstract: An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in an in-circuit mode or in a bypass mode. Embodiments of the invention allow for both a single switch in the series input path while still having the ability to isolate the bypass path from an input matching network. In both modes, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.

Abstract: Systems, methods, and apparatus for biasing a high speed and high voltage driver using only low voltage transistors are described. The apparatus and method are adapted to control biasing voltages to the low voltage transistors such as not to exceed operating voltages of the low voltage transistors while allowing for DC to high speed operation of the driver at high voltage. A stackable and modular architecture of the driver and biasing stages is provided which can grow with a higher voltage requirement of the driver. Capacitive voltage division is used for high speed bias voltage regulation during transient phases of the driver, and resistive voltage division is used to provide bias voltage at steady state. A simpler open-drain configuration is also presented which can be used in pull-up or pull-down modes.

Abstract: A charge pump circuit that utilizes a sensing circuit for determining the current loading or status of the output supply generated by the charge pump circuit to determine a corresponding frequency for a variable rate clock for the charge pump circuit. When a current load is present, the clock frequency automatically ramps up to a relatively high level to increase the output current of the charge pump circuit. When the current load is removed and the supply is settled out, the clock frequency is automatically reduced to a relatively quieter level and the charge pump circuitry operates at a lower power level. Accordingly, the charge pump circuit is only noisy when it has to be, thus providing optimal power when required and being electrically quiet and operating at lower power at all other times.

Abstract: An amplifier circuit having an improved inter-stage matching network and improved performance. In one embodiment, an RF signal source having an output impedance ZSOURCE is approximately impedance matched through an inductive tuning circuit to a power amplifier having an input impedance ZPA. The inductive tuning circuit includes a tunable capacitor element C1 and inductive elements L1, L2, which may be fabricated as stacked conductor coils. Since the capacitance of C1 is tunable, impedance matching is available over a broad range of RF frequencies. Also provided are DC isolation between the RF signal source and the power amplifier, coupling of a voltage source to the output of the RF signal source through L1, and coupling of a bias voltage to the input of the power amplifier through L2.

Abstract: A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: Embodiments of signal bias generators and regulators are described generally herein. Other embodiments may be described and claimed.

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Abstract: An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Abstract: A FET based double balanced mixer (DBM) that exhibits good conversion gain and IIP3 values and provides improved linearity and wide bandwidth. In one embodiment, a first balun is configured to receive a local oscillator (LO) signal and generate two balanced LO signals that are coupled to two corresponding opposing nodes of a four-node FET ring. A second balun is configured to pass an RF signal on the unbalanced side. The FET ring includes at least four FETs connected as branches of a ring, with the source of each FET connected to the drain of a next FET in the ring. Each FET is preferably fabricated as, or configured as, a low threshold voltage device having its gate connected to its drain, which causes the FET to operate as a diode, but with the unique characteristic of having close to a zero turn-on voltage.

Abstract: A system, comprising a dual voltage supply configured to receive a logic state input voltage and configured to output an output voltage, wherein the dual voltage supply is configured to output a nominal voltage at a high state of the logic state input voltage and the dual voltage supply is configured to output a high voltage at a low state of the logic state input voltage, a pre-charge capacitor is configured to receive the output voltage of the dual voltage supply and an output buffer has an output buffer power input is coupled to the pre-charge capacitor and configured to receive the output voltage of the dual voltage supply, an output buffer signal input is configured to receive the logic state input voltage and an output buffer output is configured to output a digital output signal.

Abstract: A DC-to-DC voltage converter comprising a differential charge pump that utilizes a differential clocking scheme to reduce output electrical noise by partial cancellation of charge pump glitches (voltage transients), and a corresponding method of operating a differential charge pump. The differential charge pump can be characterized as having at least two charge pump sections that initiate charge pumping in opposite phases of a clock signal to transfer (pump) charge to storage capacitors. The differential charge pump is particularly well suited for implementation in integrated circuit chips requiring negative and/or positive voltages, and multiples of such voltages, based on a single input voltage.