Abstract: A signal re-driving device, a data storage system and a mode control method are provided. The method includes the following steps. A first signal is received via a receiving circuit of the signal re-driving device. An analog signal feature is detected the receiving circuit. A first mode is entered according to the analog signal feature. The first signal is modulated and a second signal is outputted in the first mode. The second signal is sent via a sending circuit of the signal re-driving device. A digital signal feature is detected via the receiving circuit. And, the first mode is switched to a second mode according to the digital signal feature.

Abstract: A temperature control method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: detecting a system parameter of the memory storage apparatus, and the system parameter reflects wear of a rewritable non-volatile memory module in the memory storage apparatus; determining a temperature control threshold value according to the system parameter; and performing a temperature reducing operation in response to a temperature of the memory storage apparatus reaching the temperature control threshold value to reduce the temperature of the memory storage apparatus.

Abstract: A method for managing a memory buffer, a memory control circuit unit, and a memory storage apparatus are provided. The method includes the following steps. Multiple consecutive first commands are received from a host system. A command ratio of read command among the first commands is calculated. The memory storage apparatus is being configured in a first mode or a second mode according to the command ratio and a ratio threshold. A first buffer is configured in a buffer memory to temporarily store a logical-to-physical address mapping table in response to the memory storage device being configured in the first mode, in which the first buffer has a first capacity. A second buffer is configured in the buffer memory in response to the memory storage device being configured in the second mode, in which the second buffer has a second capacity, which is greater than the first capacity.

Abstract: A flash memory control method, a flash memory storage device and a flash memory controller are provided. The method includes the following. A flash memory module is instructed to perform a data merge operation to copy first data in a first physical unit into at least one second physical unit. After the first data is copied and before the first physical unit is erased, another programming operation is performed on the first physical unit to change a data storage state of at least a part of memory cells in the first physical unit from a first state into a second state. After the first physical unit is programmed, an erase operation is performed on the first physical unit.

Abstract: A crossing frames encoding management method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: reading a tag swap information corresponding to a first physical group; encoding a first data; storing a first part of the encoded first data to at least one first physical unit corresponding to a first tag information in the first physical group; and storing a second part of the encoded first data to at least one second physical unit corresponding to a second tag information in the first physical group according to the tag swap information. The first tag information corresponds to a first crossing frames encoding group. The second tag information corresponds to a second crossing frames encoding group. The first crossing frames encoding group is different from the second crossing frames encoding group.

Abstract: A mapping information management method, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a write command instructing storing of first data from a host system; storing the first data to a rewritable non-volatile memory module according to the write command; updating mapping information corresponding to the storing of the first data; storing the mapping information to the rewritable non-volatile memory module; generating assistant information according to first part information of the mapping information, where the assistant information is not stored into the rewritable non-volatile memory module; and transmitting second part information of the mapping information and the assistant information to the host system to provide information related to the storing of the first data.

Abstract: A decoding method, a memory storage device, and a memory control circuit unit are provided. The decoding method includes: respectively performing a single-frame decoding on a plurality of first data frames read from a physical unit set, the physical unit set contains a plurality of first physical units in a rewritable non-volatile memory module; in response to an entire decoding result of the first data frames meeting a first condition, obtaining error evaluation information related to the physical unit set, and the error evaluation information reflects a bit error status of the physical unit set; obtaining reliability information according to the error evaluation information; and performing the single-frame decoding on a second data frame read from one of the first physical units according to the reliability information.

Abstract: A data rebuilding method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: establishing a connection between the memory storage apparatus and a host system; storing a first data to a memory of the host system via the connection; detecting an error in the first data in the memory; and rebuilding a part of data in the first data in the memory according to the error.

Abstract: A data accessing method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: reading a codeword stored in a physical programming unit, and calculating a bit change ratio of a bit value change in dummy data included in the codeword; adjusting a read voltage level or a log likelihood ratio according to the bit change ratio; and performing a decoding operation on the codeword by using the adjusted read voltage level or the adjusted log likelihood ratio.

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are provided. The method includes: reading first data from a first physical unit by using a first read voltage level according to first management information among multiple candidate management information; decoding the first data and recording first error bit information of the first data; and adjusting sorting information related to the candidate management information according to the first error bit information. The sorting information reflects a usage order of the candidate management information in a decoding operation.

Abstract: A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes the following. When the memory storage device is powered-on, it is determined whether a power loss state of the memory storage device matches an unexpected power loss state according to a power-off instruction. Data is written into a plurality of physical programming units using a single-page programming mode and not using a multi-page programming mode when it is determined that the power loss state matches the unexpected power loss state.

Abstract: A flash memory control method, a flash memory storage device and a flash memory controller are provided. The method includes the following. A flash memory module is instructed to perform a data merge operation to copy first data in a first physical unit into at least one second physical unit. After the first data is copied and before the first physical unit is erased, another programming operation is performed on the first physical unit to change a data storage state of at least a part of memory cells in the first physical unit from a first state into a second state. After the first physical unit is programmed, an erase operation is performed on the first physical unit.

Abstract: A method for managing a host memory buffer, a memory storage apparatus, and a memory control circuit unit are provided. The method includes: detecting whether a system abnormality occurs; copying a first command and first data corresponding to the first command stored in a data buffer of a host system to the memory storage apparatus in response to determining that the system abnormality occurs; executing an initial operation after copying the first command and the first data, wherein the initial operation initializes a part of a hardware circuit in the memory storage apparatus and does not initialize another part of the hardware circuit in the memory storage apparatus; and re-executing the first command stored in the memory storage apparatus after initializing the part of the hardware circuit.

Abstract: A data accessing method, a memory control circuit unit, and a memory storage device are provided. The data accessing method includes the following steps. A reading command is received from a host system, in which the reading command instructs to read a first logical address, the first logical address is mapped to a first physical programming unit, and the first physical programming unit corresponds to a first physical erasing unit. A first data is generated after receiving the reading command, and the first data is written to a second physical programming unit included in the first physical erasing unit. A second data stored in the first physical programming unit is read after the first data is written, so as to respond to the reading command.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a first write command from a host system; selecting a first physical erasing unit from at least one physical erasing unit available for writing and writing data corresponding to the first write command to the first physical erasing unit by using a single page programming mode or a multi-page programming mode when the number of physical erasing units available for writing is greater than a first threshold; and selecting a second physical erasing unit from the at least one physical erasing unit available for writing and writing data corresponding to the first write command into the second physical erasing unit by only using the single page programming mode when the number of physical erasing units available for writing is not greater than the first threshold.

Abstract: A data merge method for a rewritable non-volatile memory module including multiple physical units is provided. The method includes: starting a first data merge operation, and selecting at least one first physical unit for executing the first data merge operation and at least one second physical unit for executing a second data merge operation from the physical units; reading first mapping information from the rewritable non-volatile memory module, and copying first valid data collected from the at least one first physical unit to at least one third physical unit in the physical units; identifying second valid data in the at least one second physical unit according to the first mapping information in the first data merge operation; and starting the second data merge operation, and copying the second valid data collected from the at least one second physical unit to at least one fourth physical unit in the physical units.

Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: programming multiple first memory cells in a first physical erasing unit in a rewritable non-volatile memory module; and applying an electronic pulse to at least one word line in the rewritable non-volatile memory module. The at least one word line is coupled to multiple second memory cells in the first physical erasing unit. The second memory cells include the first memory cells. The electronic pulse is not configured to read, program, or erase the second memory cells.

Abstract: A data writing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes: receiving a write command from a host system; and determining whether to write a data corresponding to the write command into a first area or a second area according to a write amplification factor of the first area, where if it is determined to write the data into the second area, copying the written data to the first area after writing the data.

Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The method includes receiving first data from a host system; sending a first write command sequence instructing continuous writing of the first data to a plurality of first chip enabled (CE) regions in response to the memory storage device being in a first state; receiving second data from the host system; and sending a second write command sequence instructing continuous writing of the second data to at least one second CE region in response to the memory storage device being in a second state. A data amount of the first data is equal to a data amount of the second data. A total number of the first CE regions is greater than a total number of the at least one second CE region.

Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The method includes: executing a single page encoding operation on first data stored in a first type physical unit to generate local parity data; executing a global encoding operation on second data stored in at least two of the first type physical unit, a second type physical unit, and a third type physical unit to generate global parity data; reading the second data from the at least two of the first type physical unit, the second type physical unit, and the third type physical unit in response to a failure of a single page decoding operation for the first data; and executing a global decoding operation on the second data according to the global parity data.