Abstract: A power module has a substrate with a bottom side and a component side. Power converters of the power module are implemented using monolithic integrated circuit (IC) switch blocks that are mounted on the component side of the substrate. The power converters include output inductors that are disposed within the substrate. An end of an output inductor is connected to a switch node of a monolithic IC switch block and another end of the output inductor is connected to an output voltage node of the power module.

Abstract: A method of fabricating a vertical fin-based field effect transistor (FET) includes providing a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a first conductivity type, epitaxially growing a first semiconductor layer on the first surface of the semiconductor substrate, the first semiconductor layer having the first conductivity type and including a drift layer and a graded doping layer on the drift layer, and epitaxially growing a second semiconductor layer having the first conductivity type on the graded doping layer. The method also includes forming a metal compound layer on the second semiconductor layer, forming a patterned hard mask layer on the metal compound layer, and etching the metal compound layer and the second semiconductor layer using the patterned hard mask layer as a mask exposing a surface of the graded doping layer to form a plurality of fins surrounded by a trench.

Abstract: A vertical fin-based field effect transistor (FinFET) includes an array of FinFETs comprising a plurality of rows and columns of active fins with source contacts and one or more rows of first inactive fins disposed on a first set of sides of the array of FinFETs. The vertical FinFET also includes one or more columns of second inactive fins disposed on a second set of sides of the array of FinFETs. The first inactive fins and the second inactive fins are characterized by a reduced electrical conductivity compared to an electrical conductivity of the active fins of the array of FinFETs. The vertical FinFET further includes an active gate region surrounding the FinFETs of the array of FinFETs and an additional gate region surrounding the first inactive fins and the second inactive fins. At least a portion of the additional gate region is a neutralized gate region.

Abstract: A method of forming an alignment contact includes: providing a III-nitride substrate; epitaxially growing a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type; forming a plurality of III-nitride fins on the first III-nitride layer, wherein each the plurality of III-nitride fins is separated by one of a plurality of first recess regions, wherein the plurality of III-nitride fins are characterized by the first conductivity type; epitaxially regrowing a III-nitride source contact portion on each of the plurality of III-nitride fins; and forming a source contact structure on the III-nitride source contact portions.

Abstract: Embodiments described include hybrid power connections between a drilling rig and a power grid. A hybrid energy controller can provide the ability to connect a high horse-power micro-grid with a drilling rig to a normal utility grid and mitigate any power surges. The micro-grid can comprise battery units capable of providing power when generator sets (gensets) don't meet load demands and storing excess power when supplied power exceeds demand.

Abstract: A LED driving system for driving a LED matrix. The LED driving system includes an interconnection structure having a first surface and a second surface opposite to the first surface and a plurality of driver dies/chips attached to the first surface of the interconnection structure. The LED matrix is divided into a plurality of sub LED matrix sections that are attached to the second surface of the interconnection structure. The interconnection structure is configured to electrically couple each one of the plurality of sub LED matrix sections to a corresponding one driver die/chip in the plurality of driver dies/chips.

Abstract: A vertical fin-based field effect transistor (FinFET) device includes an array of FinFETs comprising a plurality of rows and columns of separated fins. Each of the separated fins has a length and a width measured laterally with respect to the length and includes a first fin tip disposed at a first end of the separated fin, a second fin tip disposed at a second end of the separated fin opposing the first end, a central region disposed between the first fin tip and the second fin tip and characterized by a first electrical conductivity, and a source contact electrically coupled to the central region. The first fin tip and the second fin tip are characterized by a second electrical conductivity less than the first electrical conductivity. The FinFET further includes a first gate region surrounding the first fin tip and a second gate region surrounding the second fin tip.

Abstract: A gate driver is configured to drive a normally-on device and a normally-off device coupled in series. The gate driver controls the normally-on device in response to a PWM signal, and to control a normally-off device to maintain ON in normal operations. If an under voltage condition of a negative power supply of a first driver used to drive the normally-on device, or a positive power supply of a second driver used to drive the normally-off device, or an input supply voltage is detected, the normally-off device is controlled to be OFF.

Abstract: An LLC resonant converter including a transformer, a switching full-bridge circuit, a resonant circuit, and a bridge rectifier. The switching full-bridge circuit has a first pair of switches and a second pair of switches, with the first pair of switches being connected between a DC input voltage and a second end of a secondary winding of the transformer, the second pair of switches being connected between a DC input voltage and a first end of the secondary winding of the transformer.

Abstract: Methods and semiconductor devices are provided. A vertical junction field effect transistor (JFET) includes a substrate, an active region having a plurality of semiconductor fins, a source metal layer on an upper surface of the fins, a source metal pad layer coupled to the semiconductor fins through the source metal layer, a gate region surrounding the semiconductor fins, and a body diode surrounding the gate region.

Abstract: A deck height control system for use with a mower that has a deck positioned at a first height and is configured to support a blade motor. The control system includes an actuator that may be configured to vertically displace the deck from the first height to a second height. A deck system module may connect to the actuator and be capable of signaling the actuator, during operation, to displace the deck a particular deck distance in a particular vertical direction necessary to achieve the second height. The deck system module may further have a deck height memory capable of storing information relating to deck displacement activity. A control may connect to the deck system module and be capable of signaling the particular deck distance and particular vertical direction to the deck system module when engaged by an operator. A battery-operated mower may include the deck height control system.

Abstract: A three-phase grid-connected inverter, and a method and a device for controlling the three-phase grid-connected inverter are provided. The method is applied to a three-phase three-leg grid-connected inverter. A structure of the three-phase three-leg grid-connected inverter is improved, so that a filter capacitor (C1, C2, and C3) is connected to a negative electrode of a direct current input bus to form a harmonic bypass circuit. Inverter devices connected in parallel in the system operate stably without increase of inductance of an inductor (L1, L2, L3). In addition, the three-phase three-leg grid-connected inverter according to the present disclosure operates in a discontinuous mode of inductor current (iL1, iL2, and iL3). That is, in the process that a power switch transistor (Q1, Q2, Q3, Q4, Q5 and Q6) on bridge legs is turned on, the inductor current (iL1, iL2, and iL3) drops to zero.

Abstract: A method of operating a forced induction gaseous-fueled engine includes mixing gaseous-fuel and engine intake air to form a mixture at a fuel mixer. The method includes delivering the mixture to an intake manifold by at least partially bypassing a charge air cooler.

Abstract: A field-plate trench FET having a drain region, an epitaxial layer, a source region, a gate conductive layer formed in a trench, a field-plate dielectric layer formed on vertical sidewalls of the trench, a well region formed below the trench, a source contact and a gate contact. When the well region is in direct physical contact with the gate conductive layer, the field-plate trench FET can be used as a normally-on device working depletion mode, and when the well region is electrically isolated from the gate conductive layer by the field-plate layer, the field-plate trench FET can be used as a normally-off device working in an accumulation-depletion mode.

Abstract: The present disclosure describes vertical transistor device and methods of making the same. The vertical transistor device includes substrate layer of first conductivity type, drift layer of first conductivity type formed over substrate layer, body region of second conductivity type extending vertically into drift layer from top surface of drift layer, source region of first conductivity type extending vertically from top surface of drift layer into body region, dielectric region including first and second sections formed over top surface, buried channel region of first conductivity type at least partially sandwiched between body region on first side and first and second sections of dielectric region on second side opposite to first side, gate electrode formed over dielectric region, and drain electrode formed below substrate layer. Dielectric region laterally overlaps with portion of body region. Thickness of first section is uniform and thickness of second section is greater than first section.

Abstract: An inductor has one or more wires and a multipart magnetic core. The multipart magnetic core has magnetic core parts that are adjacent and magnetically coupled. The inductor provides an inductance of at least 40 nH for currents greater than 1 A and less than 60 A, and at least 20 nH for currents of at least 60 A.

Abstract: A blower includes a motor mounted to a frame. The frame includes wheels mounted to the frame. The blower includes a fan powered by the motor and a blower outlet. The fan is configured to expel air from the fan through the blower outlet. The blower outlet is movable in a horizontal direction and a vertical direction. The blower includes a horizontal control for controlling a horizontal position of the blower outlet. The blower includes a vertical control for controlling a vertical position of the blower outlet. Both the horizontal and vertical controls are positioned remote from the blower outlet.

Abstract: In one embodiment, an EV charging system includes: a plurality of first converters to receive and convert grid power at a distribution grid voltage to at least one second voltage; a high frequency transformer coupled to the first converters to receive the at least one second voltage and output at least one high frequency AC voltage; and a plurality of port rectifiers coupled to a plurality of secondary windings of the high frequency transformer, each of the port rectifiers comprising a unidirectional AC-DC converter to receive and convert the at least one high frequency AC voltage to a DC voltage. At least some of the port rectifiers may be coupled in series to provide at least one of a charging current or a charging voltage to at least one dispenser to which at least one EV is to couple.

Abstract: A 3-D package structure for isolated power module is discussed. The package structure has metal trace in a support layer (e.g. a substrate board), which is covered by two magnetic films from both sides, thus an effective transformer is formed. An IC die which contains a voltage regulator is stacked above the support layer, which significantly reduces the package size.

Abstract: The present disclosure relates generally to debris collection machines configured to deposit collected debris directly into a disposable collection bag. The machine can include a collection assembly in communication with a vacuum assembly. The collection assembly can include a support frame being sized and shaped to receive a collection bag. The assembly can also include a cover having a permeable member and a clamping section, the cover being connected to the outlet of the vacuum assembly and connected to the clamping section. The cover can have an open position and a closed position, wherein, when in the closed position the clamping section secures a portion of the collection bag between the clamping section and the support frame.