Abstract: A semiconductor package including a semiconductor chip, a conductive element disposed aside the semiconductor chip, a conductive via disposed on and electrically connected to the conductive element, an insulating encapsulation, and a first circuit structure disposed on the semiconductor chip and the conductive via is provided. A height of the conductive element is less than a height of the semiconductor chip. The insulating encapsulation encapsulates the semiconductor chip, the conductive element, and the conductive via. The conductive via is located between the first circuit structure and the conductive element, and the semiconductor chip is electrically coupled to the conductive via through the first circuit structure.

Abstract: A package structure including a frame structure, a die, an encapsulant, a redistribution structure, and a passive component is provided. The frame structure has a cavity. The die is disposed in the cavity. The encapsulant fills the cavity to encapsulate the die. The redistribution structure is disposed on the encapsulant, the die, and the frame structure. The redistribution structure is electrically coupled to the die. The passive component is disposed on the frame structure and electrically coupled to the redistribution structure through the frame structure. A manufacturing method of a package structure is also provided. The frame structure may provide support, reduce warpage, dissipate heat from the die, act as a shield against electromagnetic interference, and/or provide electrical connection for grounding.

Abstract: A packaging structure including first, second, and third dies, an encapsulant, a circuit structure, and a filler is provided. The encapsulant covers the first die. The circuit structure is disposed on the encapsulant. The second die is disposed on the circuit structure and is electrically connected to the circuit structure. The third die is disposed on the circuit structure and is electrically connected to the circuit structure. The third die has an optical signal transmission area. The filler is disposed between the second die and the circuit structure and between the third die and the circuit structure. A groove is present on an upper surface of the circuit structure. The upper surface includes first and second areas located on opposite sides of the groove. The filler directly contacts the first area. The filler is away from the second area. A manufacturing method of a packaging structure is also provided.

Abstract: A package structure including a first die, an encapsulant, a first circuit structure, a second circuit structure, a conductive connector, a second die, and a filler is provided. The encapsulant covers the first die and has a first surface and a second surface opposite to each other. The first circuit structure is disposed on the first surface. The second circuit structure is disposed on the second surface. The conductive connector penetrates the encapsulant. The second die is disposed on the second circuit structure. The second die has an optical signal transmission area. The filler is disposed between the second die and the second circuit structure. An upper surface of the second circuit structure has a groove. The upper surface includes a first area and a second area disposed on opposite sides of the groove. The filler directly contacts the first area. The filler is disposed away from the second area.

Abstract: A package structure including a first die, a second die, an encapsulant, a dam structure, a light-transmitting sheet, a conductive connector, a circuit layer, and a conductive terminal is provided. The first die includes a first active surface. The first active surface has a sensing area. The second die is arranged such that a second back surface thereof faces the first die. The encapsulant covers the second die. The encapsulant has a first encapsulating surface and a second encapsulating surface. The dam structure is located on the first encapsulating surface and exposes the sensing area. The light-transmitting sheet is located on the dam structure. The conductive connector penetrates the encapsulant. The circuit layer is located on the second encapsulating surface. The first die is electrically connected to the second die through the conductive connector and the circuit layer. The conductive terminal is disposed on the circuit layer.

Abstract: The semiconductor package has a metal layer, a first dielectric layer formed on a metal layer, and an opening formed through the first dielectric layer to expose a part of the metal layer. The bump structure has an under bump metallurgy (hereinafter UBM), a first buffer layer and a metal bump. The UBM is formed on the first part of the metal layer, a sidewall of the opening and a top surface of the first dielectric layer. The first buffer layer is formed between a part of the UBM corresponding to the top surface of the first dielectric layer and the top surface of the first dielectric layer. The metal bump is formed on the UBM. Therefore, the first buffer layer effectively absorbs a thermal stress to avoid cracks generated in the bump structure after the bonding step.

Abstract: A semiconductor composite structure includes an electrically conductive bump, and a patterned bonding layer. The electrically conductive bump includes a body portion for being electrically connected to a metal layer of a semiconductor substrate, and a contact portion disposed on the body portion opposite to the metal layer. The patterned bonding layer is disposed on the contact portion opposite to the body portion, and includes an electrically conductive portion and a recess portion depressed relative to the electrically conductive portion. An etching selectivity ratio of the conductive portion relative to the contact portion is greater than 1. A method for making the semiconductor composite structure and a semiconductor device are also disclosed.

Abstract: A head of a tag device having a body, at least one row of negative-pressure through holes and at least one row of positive-pressure through holes. The body has a first surface and a second surface. The rows of negative and positive-pressure through holes are formed through the first and second surfaces of the body and arranged along a long-axis direction. Two negative and positive-pressure through holes at both ends of the corresponding row of negative and positive-pressure through holes are respectively close to the short sides of the body. Therefore, an effective labeling area is distributed between two short sides. The head of the tag device of the present invention provides a stable labeling operation for different products where different components are mounted and increases units per hour (UPH).

Abstract: A package structure including a first chip, a second chip, a dielectric body, a third chip, an encapsulant, a first conductive terminal, and a circuit layer is provided. The dielectric body covers the first chip and the second chip. The third chip is disposed on the dielectric body such that a third active surface thereof faces a first active surface of the first chip or a second active surface of the second chip. The encapsulant covers the third chip. The first conductive terminal is disposed on the dielectric body and is opposite to the third chip. The circuit layer includes a first circuit portion and a second circuit portion. The first circuit portion penetrates the dielectric body. The first chip, the second chip, or the third chip is electrically connected to the first conductive terminal through the first circuit portion. The second circuit portion is embedded in the dielectric body.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first dies, an insulating encapsulation laterally encapsulating the first dies, a second die disposed over the portion of the insulating encapsulation and at least partially overlapping the first dies, and a redistribution structure disposed on the insulating encapsulation and electrically connected to the first dies and the second die. A second active surface of the second die faces toward first active surfaces of the first dies. The redistribution structure includes a first conductive via disposed proximal to the first dies, and a second conductive via disposed proximal to the second die. The first and second conductive vias are electrically coupled and disposed in a region of the redistribution structure between the second die and one of the first dies. The first conductive via is staggered from the second conductive via by a lateral offset.

Abstract: A testing device includes a measuring unit, a testing board supporting the measuring unit and connected to the measuring unit, and a connecting interface coupled to the testing board. The connecting interface includes connecting terminals protruding in a direction away from the testing board, and is connected to a device under test (DUT) via the connecting terminals. When the DUT is connected to the connecting interface, the measuring unit supplies a constant electric current via the testing board and the connecting interface to the DUT for a preset duration to result in a voltage, measures the voltage, and determines, based on a result of measurement of the voltage, an electrical connection status of the DUT.

Abstract: A method for packaging a semiconductor device includes the steps of: disposing a wafer on a first carrier plate; attaching a second carrier plate to a side of the first carrier plate opposite to the wafer; disposing a chip unit on a side of the wafer opposite to the first carrier plate; and covering the wafer and the chip unit with an encapsulation layer. A semiconductor packaging structure is also disclosed.

Abstract: A semiconductor package structure including a circuit substrate, at least one chip, an encapsulant, a plurality of conductive connectors, a redistribution layer, and a plurality of conductive terminals is provided. The circuit substrate has a first surface and a second surface opposite to the first surface. The at least one chip has an active surface and a rear surface opposite to the active surface. The at least one chip is disposed on the circuit substrate with the rear surface. The encapsulant encapsulates the at least one chip. The plurality of conductive connectors surrounds the at least one chip. The redistribution layer is located on the encapsulant. The plurality of conductive terminals is located on the second surface. The at least one chip is electrically connected to the plurality of conductive terminals via the redistribution layer, the plurality of conductive connectors, and the circuit substrate. A manufacturing method of a semiconductor package structure is also provided.

Abstract: A semiconductor package structure includes a first redistribution layer, a plurality of conductive connectors, a chip, and an encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The first redistribution layer includes at least one conductive pattern and at least one dielectric layer stacked on each other. The conductive pattern includes a plurality of landing pads, and each of the landing pads is separated from the dielectric layer. The conductive connectors are located on the first surface. Each of the conductive connectors is corresponding to and electrically connected to one of the landing pads. The chip is located on the first surface. The chip is electrically connected to the first redistribution layer. The encapsulant encapsulates the chip and the conductive connectors. A manufacturing method of a semiconductor package structure is also provided.

Abstract: A laser cutting method for a wafer is provided. First, an active side of a wafer is cut by a laser to form multiple cutting grooves so that the thicker and harder layer of the integrated circuit on the active side is cut. Then the stealth laser is used to cut the backside of the wafer by aligning the beams of the stealth laser with the cutting grooves. Therefore, the cutting grooves easily extend to the backside of the wafer and penetrate through the wafer to dice the wafer into multiple independent chips.

Abstract: A wafer transferring device adapted to suck and transfer a first wafer is provided. The wafer transferring device includes an arm and a supporting carrier. The supporting carrier is connected to the arm. The supporting carrier has a single vacuum suction port exposed to an upper surface of the supporting carrier. The supporting carrier is adapted to move to a position below the first wafer. The single vacuum suction port is adapted to suck a first central region of the first wafer so as to lift up and transfer the first wafer.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first redistribution structure, a second redistribution structure, a first semiconductor die, a second semiconductor die and an encapsulant. The second redistribution structure is vertically overlapped with the first redistribution structure. The first and second semiconductor dies are located between the first and second redistribution structures, and respectively have an active side and a back side opposite to the active side, as well as a conductive pillar at the active side. The back side of the first semiconductor die is attached to the back side of the second semiconductor die. The conductive pillar of the first semiconductor die is attached to the first redistribution structure, whereas the conductive pillar of the second semiconductor die extends to the second redistribution structure.

Abstract: A pickup and contact device is adapted to be connected to a moving device to move a picked-up electronic element to an electrical testing zone. The moving device pressurizes the electronic element through the pickup and contact device, so that a contact point of the electronic element stably contacts a contact pad of the electrical testing zone. The pickup and contact device includes a main body including a base and a contact portion and a plurality of heat dissipation fins disposed at two opposite sides of the base. The contact portion is adapted to pick up the electronic element and to move the electronic element to the electrical testing zone along with the moving device. When the electronic element is tested in the electrical testing zone, heat emitted from the electronic element is adapted to be transmitted out through the heat dissipation fins of the main body.

Abstract: A chip package structure including a circuit board, a first die, a spacer, and a second die. The first die is disposed on the circuit board, and the spacer is disposed on the circuit board, in which the spacer includes a spacer part and at least one via structure penetrating through the spacer part. The second die is disposed on the first die and the spacer, and the second die is electrically connected to the circuit board through the spacer.

Abstract: A chip package structure including a first chip, an encapsulant, a first redistribution layer, a second redistribution layer, a second chip, and a third chip is provided. The first chip has an active surface, a back side surface opposite to the active surface, a plurality of conductive vias, and a plurality of conductive connectors disposed on the back side surface. The encapsulant covers the active surface, the back side surface, and the conductive connectors. The encapsulant has a first encapsulating surface and a second encapsulating surface opposite to the first encapsulating surface. The first redistribution layer is disposed on the first encapsulating surface. The second redistribution layer is disposed on the second encapsulating surface. The second chip is disposed on the second redistribution layer. The third chip is disposed on the second redistribution layer. A manufacturing method of a chip package structure is also provided.