Abstract: After forming a stack of layers (130, 140, 310) for a transistor or a charge-trapping memory over an active area (110), and before etching isolation trenches (160) in the semiconductor substrate (120) with the stack as a mask, spacers (610) are formed on the stack's sidewalls. The trench etch may include a lateral component, so the top edges of the trenches may be laterally recessed to a position under the spacers or the stack. After the etch, the spacers are removed to facilitate filling the trenches with the dielectric (to eliminate voids at the recessed top edges of the trenches). Other embodiments are also provided.

Abstract: An output driver calibration circuit includes a programmable drive strength output pullup driver including a strongest transistor and a number of other transistors, a programmable drive strength output pulldown driver including a strongest transistor and a number of other transistors, and a calibration circuit for generating a number of control signals for controlling the transistors in the output pullup driver and the transistors in the output pulldown driver, wherein the control signals are generated simultaneously, except for two the strongest driver transistors.

Abstract: A leakage testing method for a DRAM having a recess gate is provided. The method includes the steps of: programming to set the first storage unit and the second storage unit of a same memory cell with different storage statuses; and disturbing one of the word lines extending through the memory cells; then determining whether the DRAM is acceptable or not. When another one of the word lines extending through the memory cells is caused with a reading error by disturbing the one of the word lines extending through the memory cells, a failure is determined as occurred, and the failure is attributed to a leakage type of extended depletion region. When the another one of the word lines extending through the memory cells is not caused with a reading error by disturbing the one of the word lines extending through the memory cells, the DRAM is determined as acceptable.

Abstract: A multi-bank block architecture for integrated circuit memory devices which effectively reduces the total length of the datapath for a given input/output (I/O) from the memory cells in the memory array to the actual device I/O pad. In accordance with the present, a memory block in a memory device is effectively divided into two or more banks, and between these banks an additional non-shared sense amplifier band is added as a sense amplifier cannot be shared across a bank boundary. Within this multi-bank block, separate data paths are provided for the banks with the column (Y-Select) lines being common.

Abstract: A configurable architecture, hybrid analog/digital delay locked loop and technique with fast open loop digital locking for integrated circuit dynamic random access memory (DRAM) devices and devices incorporating embedded DRAM. The DLL design and technique disclosed employs a hybrid analog/digital delay line, but does not use conventional closed loop architecture during the digital phase of the locking process.

Abstract: A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the composite layer. A phase-change material occupies at least one portion of the via hole. The composite layer comprises alternating layers or a mixture of the dielectric material and the low thermal conductivity material.

Abstract: A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer.

Abstract: A phase change memory array is disclosed, comprising a first cell having a patterned phase change layer, and a second cell having a patterned phase change layer, wherein the patterned phase change layer of the first cell and the patterned phase change layer of the second cell are disposed at different layers.

Abstract: An output driver calibration circuit includes a programmable drive strength output pullup driver including a strongest transistor and a number of other transistors, a programmable drive strength output pulldown driver including a strongest transistor and a number of other transistors, and a calibration circuit for generating a number of control signals for controlling the transistors in the output pullup driver and the transistors in the output pulldown driver, wherein the control signals are generated simultaneously, except for two the strongest driver transistors.

Abstract: Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer.

Abstract: A phase change memory device comprising a substrate. A plurality of bottom electrodes isolated from each other is on the substrate. An insulating layer crosses a portion of the surfaces of any two of the adjacent bottom electrodes. A pair of phase change material spacers is on a pair of sidewalls of the insulating layer, wherein the pair of the phase change material spacers is on any two of the adjacent bottom electrodes, respectively. A top electrode is on the insulating layer and covers the phase change material spacers.

Abstract: A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N2 in the annealing chamber, and exposing the semiconductor substrate to a mixture of N2 and N2O in the annealing chamber.

Abstract: A bus driver circuit divides an internal data bus for an integrated circuit memory into at least two groups, designated by speed. A faster group of data lines and a slower group of data lines are placed in an interleaved fashion in order to provide a two group shielding solution. At the earliest opportunity following the reception of a read command, the data from memory banks in the memory is sorted into these two groups. For a DDR3 memory, the sorting method is based on the A2 column address, known as C2. All of the data is brought out of the banks in parallel and sorted as it enters the main amplifiers. These main amplifiers are also divided into two groups, faster and slower. Each amplifier then connects to a data line (G-line) of the same group. The clock assigned to the fast group fires right away, thereby connecting the data associated with the fast amplifiers to the fast data group. This data group then proceeds to the output buffers through the entire data path as fast as possible.

Abstract: A method of fabricating a metal-oxide-semiconductor (MOS) transistor is provided. First, a patterned hard mask layer with an opening therein is formed over the substrate. A spacer is formed on the sidewall of the patterned hard mask layer in the opening. An isotropic etching process is performed on the substrate to form a recess in the substrate. An ion implant process is performed on the substrate in the lower portion of the recess using oxidation-restrained ions. The spacer is removed. Then, a thermal process is performed to form a gate oxide layer on the surface of the substrate within the recess such that the gate oxide layer in the upper portion of the recess is thicker than that in the lower portion of the recess.

Abstract: A method of fabricating a capacitor over bit line (COB) is provided. First, a substrate is provided and a plurality of word lines is formed on the substrate. Next, a plurality of landing plug contacts (LPCs) are formed between the word lines and a plurality of first contacts is then formed on the LPCs. Thereafter, a plurality of second contacts is formed on a first portions of the first contacts and a plurality of bit lines connecting a second portions of the first contacts is formed, simultaneously. An inter-layer dielectric (ILD) layer is formed on the substrate to cover the second contacts and the bit lines. Subsequently, a plurality of capacitors is formed in the ILD layer. Thus, the fabrication of the capacitor is simplified.

Abstract: A multi-bank block architecture for integrated circuit memory devices which effectively reduces the total length of the datapath for a given input/output (I/O) from the memory cells in the memory array to the actual device I/O pad. In accordance with the present, a memory block in a memory device is effectively divided into two or more banks, and between these banks an additional non-shared sense amplifier band is added as a sense amplifier cannot be shared across a bank boundary. Within this multi-bank block, separate data paths are provided for the banks with the column (Y-Select) lines being common.

Abstract: An asymmetric data path position and delays technique enabling high speed access in integrated circuit memory devices which is asymmetric in terms of the delay from the array to the I/O buffers based on the position relative within a known starting address of a pre-fetch field. In accordance with the technique of the present invention, the delay is not only asymmetric in terms of its physical length, but also in the number of pipeline stages and the clocks that control them and can also be asymmetric in terms of the column address required to access each section of the array and its designated pre-fetch field.

Abstract: Using the tail level referencing for an inverter stage immediately following a differential amplifier provides trip point tracking with the variations in magnitude of the output level swings on the differential amplifier stage output over the operating range of the circuit. When the tail voltage increases and the VOL of the differential stage increases, the trip point of the receiving inverter also increases. When the tail voltage decreases and the VOL of the differential amplifier goes lower, the trip point of the inverter decreases. An additional benefit is provided by the tail connection to the inverter. Faster switching of current from the right side to the left side of the differential amplifier occurs due to the tail node voltage being raised momentarily by a transistor in the inverter stage when the input of the inverter stage transitions high.

Abstract: A high-speed, low-power input buffer for an integrated circuit device in which the input voltage (VIN) is coupled to both a pull-up and a pull-down transistor. In accordance with a specific embodiment, the input buffer utilizes a reference voltage input (VREF) during a calibration phase of operation but not when in an active operational mode. A maximum level of through current is supplied when VIN=VREF with lower levels of through current at all other VIN voltages. In an integrated circuit device incorporating an input buffer as disclosed, two (or more) input buffers may be utilized per device input pin.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.