Abstract: A semiconductor device is provided. The semiconductor device has a gate structure, a source region, a drain region, and a pair of dielectric barrier layers. The gate structure is formed on a substrate. The source region and the drain region are formed in the substrate next to the gate structure, and a channel region is formed between the source region and the drain region underneath the gate structure. The pair of dielectric barrier layers is respectively formed in the substrate underneath the gate structure between the source region and the drain region. The dielectric barrier layers are used for reducing the drain induced barrier lowering effect in a nanometer scale device.

Abstract: A gate structure comprising a substrate, a gate dielectric layer, a first conductive layer, a second conductive layer, a cap layer and a first insulating spacer is provided. The gate dielectric layer is disposed on the substrate. The first conductive layer is disposed on the gate dielectric layer and has an opening. Part of the second conductive layer is disposed in the opening. The second conductive layer has an extrusion that protrudes above the opening of the first conductive layer. The extrusion has a cross-sectional width less than the width of the second conductive layer inside the opening. The cap layer is disposed on the extrusion. The first insulating spacer is disposed on part of the first conductive layer and covers the sidewalls of the extrusion. The inclusion of the extrusion in the second conductive layer decreases the resistance of the gate structure and promotes the efficiency of the device.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A DLL circuit uses a rising edge DLL to align the rising edge of the output data to the system clock and a falling edge DLL to align the falling edge of the output data. The DLL circuit does not use the falling edge of the input clock to provide a reference for the falling edge DLL. The DLL circuit uses the rising edge of a first reference clock (a buffered version of the input clock) to align the rising edge of the output data. An additional DLL is used to generate a precise second reference clock that is delayed by exactly one-half period of the first reference clock to align the falling edge of the output data. Any variation in the duty cycle of the input clock or the input clock buffer does not effect the duty cycle of the output data.

Abstract: A reduced area dynamic random access memory (DRAM) cell and method for fabricating the same wherein the cell occupies an area smaller than one photolithography pitch by two photolithography pitches through the formation of sidewall spacers along a first pattern to define a first portion of the active region of the memory cell and a second orthogonally oriented pattern to define a second portion of the active region of the memory cell thereby creating a ladder shaped active region for a column of the memory cells.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A real-time system adapted to a PVD apparatus for monitoring and controlling film uniformity is described. The system includes a shielding plate, a monitoring device, and a data processing program. The shielding plate is disposed on an inner wall of a reaction chamber above a wafer stage. An opening in the center of the shielding plate exposes the wafer. The monitoring device including a scanner and a sensor respectively disposed on opposite sidewalls of the reaction chamber between the shielding plate and the wafer stage is used for measuring the flux of the particles on every portion of the wafer to acquire real-time uniformity data including a function of the wafer position and the flux. The data processing program compares the real-time uniformity data and reference uniformity data, and a feedback signal is outputted to the PVD apparatus to adjust the process parameter thereof for controlling film uniformity.

Abstract: A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an upper portion of the sidewall of the pillar. The capacitor includes a first plate in the lower portion of the sidewall of the pillar, a second plate as an upper electrode at the periphery of the first plate, a third plate at the periphery of the second plate electrically connected with the first plate to form a lower electrode, and a dielectric layer separating the second plate from the first and third plates. A DRAM array based on the DRAM cell and a method for fabricating the DRAM array are also described.

Abstract: A dynamic random access memory (DRAM) includes a substrate, an active device and a deep trench capacitor. A trench and a deep trench are formed in the substrate. The active device is disposed on the substrate. The active device includes a gate structure and a doped region. The gate structure is disposed on the substrate and fills the trench. The doped region is disposed in the substrate at a first side of the gate structure. The deep trench capacitor is disposed in the deep trench of the substrate at a second side of the gate, and the second side is opposite to the first side. In addition, an upper electrode of the deep trench capacitor is adjacent to the bottom of the trench.

Abstract: A dynamic random access memory (DRAM) is provided. The dynamic random access memory includes a deep trench capacitor disposed in a first trench of a substrate, a conductive layer disposed in a second trench of the substrate, a gate structure, and a conductive layer disposed on the surface of the substrate at two sides of the gate structure. The depth of the second trench is smaller than the depth of the first trench, and the second trench partially overlaps with the first trench. The conductive layer disposed in the second trench is electrically connected with the conductive layer of the deep trench capacitor. The gate structure is disposed on the substrate. The conductive layer at one side of the gate structure is electrically connected with the conductive layer disposed in the second trench.

Abstract: A metal etching process is described. A substrate having a dielectric layer thereon is provided. An aluminum-copper alloy layer is formed on the dielectric layer. A hard mask layer is formed on the aluminum-copper alloy layer. A patterned photoresist layer is formed on the hard mask layer and then the hard mask layer is patterned. A thermal treatment process is performed. The thermal treatment process is carried out at a temperature of more than 300° C. for a period of at least 3 minutes. Thereafter, the aluminum-copper alloy layer is etched using the patterned hard mask layer as an etching mask. Due to the thermal treatment, the metal precipitate (CuAl2) within the aluminum-copper alloy layer is eliminated and hence the metal etching process is improved.

Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

Abstract: A phase-change memory is provided. The phase-change memory comprises first and second electrodes, wherein the first and second electrodes comprise phase-change material. A conductive path is formed between the first and second electrodes and electrically connects the first and second electrodes, wherein the conductive path comprises an embedded metal layer and a phase-change layer resulting in current from the first electrode to the second electrode or from the second electrode to the first electrode passing through the embedded metal layer and the phase change layer.

Abstract: A dynamic random access memory (DRAM) is provided. The dynamic random access memory includes a deep trench capacitor disposed in a first trench of a substrate, a conductive layer disposed in a second trench of the substrate, a gate structure, and a conductive layer disposed on the surface of the substrate at two sides of the gate structure. The depth of the second trench is smaller than the depth of the first trench, and the second trench partially overlaps with the first trench. The conductive layer disposed in the second trench is electrically connected with the conductive layer of the deep trench capacitor. The gate structure is disposed on the substrate. The conductive layer at one side of the gate structure is electrically connected with the conductive layer disposed in the second trench.

Abstract: Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

Abstract: A data bus circuit for an integrated circuit memory includes a 4-bit bus per I/O pad that is used to connect the memory with an I/O block, but only two bits per I/O are utilized for writing. Four bits per I/O pad are used for reading. At every falling edge of an input data strobe, the last two bits are transmitted over the bus, which eliminates the need for the precise counting of input data strobe pulses. The data bus circuit is compatible with both DDR1 and DDR2 operating modes.

Abstract: An integration system for obtaining a set of overlay offset parameters of a first process layer which is going to be formed in an assigned photolithography tool with an assigned mask and an assigned pre-tool. By using the integration system, the set of overlay offset parameters of the first process layer can be precisely predicted based on summing the historic-recorded set of overlay offset parameters and the bias values including a mask bias value, a photolithography tool bias value and a pit-tool bias value. Therefore, the overlay offset parameters corresponding to the same process layer can be well integrated and managed. Hence, the cost and time due to performing the test run can be saved and the throughput can be increased as well.

Abstract: A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate, an initial etch through an interlayer dielectric is performed to create an initial via which extends toward, but not into the substrate. At least a portion of the protective layer is retained on the substrate. In another step, the final contact via is created. During this step the protective layer is penetrated to open a via to the surface of the semiconductor material.

Abstract: Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.