Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media for color correction in display devices. In one aspect, the display device can include a plurality of display elements capable of reflecting ambient light. The display device can include a sensor to determine a color temperature of the ambient light. The display device also can include a processor that can receive image data, determine a color conversion parameter based on the color temperature, perform color conversion of the image data based on the color conversion parameter, and adjust at least one display element based on the color converted image data to provide a color within the color gamut of the ambient light.

Abstract: This disclosure provides systems, methods and apparatus for glass packaging of integrated circuit (IC) and electromechanical systems (EMS) devices. In one aspect, a glass package may include a glass substrate, a cover glass, one or more devices encapsulated between the glass substrate and the cover glass, and bond pads configured to attach to a flexible connector and in electrical communication with an encapsulated device. In some implementations, a flexible connector may be used to electrically connect a device within the glass package to an electrical component, such as an integrated circuit (IC) device or PCB, outside the glass package.

Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate including a silicon layer on the substrate surface is provided. A metal layer is formed on the silicon layer. A first dielectric layer is formed on the metal layer and exposed regions of the substrate surface. The metal layer and the silicon layer are treated, and the metal layer reacts with the silicon layer to form a silicide layer and a gap between the silicide layer and the dielectric layer. An amorphous silicon layer is formed on the first dielectric layer. The amorphous silicon layer is heated and cooled. The amorphous silicon layer overlying the substrate surface cools at a faster rate than the amorphous silicon layer overlying the gap.

Abstract: A method is provided for visual inspection of an array of interferometric modulators in various driven states. This method may include driving multiple columns or rows of interferometric modulators via a single test pad or test lead, such as test pad, and then observing the array for discrepancies between the expected optical output and the actual optical output of the array. This method may particularly include, for example, driving a set of non-adjacent rows or columns to a state different from the intervening rows or columns and then observing the optical output of the array.

Abstract: Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters.

Abstract: This disclosure provides implementations of dither-aware image coding processes, devices, apparatus, and systems. In one aspect, a portion of received image data is selected. First spatial domain values in the selected portion of the image data are transformed to first transform domain coefficients. Second spatial domain values in a designated dither matrix are transformed to second transform domain coefficients. A ratio of each of the first transform domain coefficients to a respective second transform domain coefficient is determined. The first transform domain coefficients are selectively coded in accordance with the determined ratios to define coded first transform domain coefficients. A reverse transformation is performed to transform the coded first transform domain coefficients to third spatial domain values defining a coded portion of the image data. By way of example, transformations such as discreet cosine transforms or discreet wavelet transforms can be used.

Abstract: Systems and methods for manufacturing and packaging electronic devices with light absorptive thin film stacks are provided. In one embodiment, a light is applied to a light absorptive thin film stack disposed between a substrate and a backplate to seal the substrate to the backplate. In another embodiment, the light absorptive thin film stack includes a plurality of thin film layers. In yet another embodiment, the light absorptive thin film stack includes a spacer layer over a reflective layer and an absorber layer over the spacer layer. In still another embodiment, the light absorptive thin film stack is less than 200 nanometers thick. In yet a further embodiment, a light absorptive thin film stack is used to seal a substrate having glass, plastic, metal, or silicon to a backplate having glass, plastic, metal, or silicon. Thus, the light absorptive thin film stack is used to seal similar or dissimilar materials through a bonding process.

Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel area of the substrate, and a first metal layer on the dielectric layer. Hydrogen ions are implanted with a plasma-immersion ion implantation process in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The hydrogen ion implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.

Abstract: This disclosure provides systems, methods and apparatus for touch sensing on a display device. In one aspect, a method is provided for reducing electrical interference on a display including bi-stable display elements and touch sensing elements without a grounded shielding layer between display elements and touch sensing elements. The method may include placing at least a portion of an array of bi-stable display elements in a selected state with display driver circuitry, maintaining the display elements in the selected state, and obtaining a signal from a touch-sensing element using touch sensing driver circuitry different from the display driver circuitry when the display elements remain in the selected state.

Abstract: A front light guide panel including a plurality of embedded surface features is provided. The front light panel is configured to deliver uniform illumination from an artificial light source disposed at one side of the font light panel to an array of display elements located behind the front light guide while allowing for the option of illumination from ambient lighting transmitted through the light guide panel. The surface embedded surface relief features create air pockets within the light guide panel. Light incident on the side surface of the light guide propagates though the light guide until it strikes an air/light material guide interface at one on the air pockets. The light is then turned by total internal reflection through a large angle such that it exits an output face disposed in front of the array of display elements.

Abstract: This disclosure provides systems and methods for forming a metal thin film shield over a thin film cap to protect electromechanical systems devices in a cavity beneath. In one aspect, a dual or multi layer thin film structure is used to seal a electromechanical device. For example, a metal thin film shield can be mated over an oxide thin film cap to encapsulate the electromechanical device and prevent degradation due to wafer thinning, dicing and package assembly induced stresses, thereby strengthening the survivability of the electromechanical device in the encapsulated cavity. During redistribution layer processing, a metal thin film shield, such as a copper layer, is formed over the wafer surface, patterned and metalized.

Abstract: In certain embodiments, a microelectromechanical (MEMS) device includes a movable element over the substrate and an actuation electrode. The movable element includes an electrically conductive deformable layer and a reflective element mechanically coupled to the deformable layer. The reflective element includes a reflective surface. The actuation electrode is under at least a portion of the deformable layer and is disposed laterally from the reflective surface. The movable element is responsive to a voltage difference applied between the actuation electrode and the movable element by moving towards the actuation electrode.

Abstract: In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the micro electromechanical systems device.

Abstract: Light modulator displays may be illuminated using a light guide comprising diffractive optics that directs light onto the light modulators. The light guide may comprise, for example, a holographic light turning element that turns light propagating within the light guide onto the array of light modulators. In some embodiments, the holographic element has multiple holographic functions. For example, the holographic element may additionally collimate ambient light or diffuse light reflected form the light modulators.

Abstract: This disclosure provides systems, methods and apparatus for fabricating electromechanical system devices within a plasma-etch reaction chamber. In one aspect, a plasma-etch system includes a plasma-etch reaction chamber, an inlet in fluid communication with the reaction chamber, a cathode positioned within the reaction chamber and a non-hollow anode positioned within the reaction chamber between the inlet and the cathode. The inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and is allowed to flow across the upper surface and around the edges of the anode. The anode can be a liner plate in place of a showerhead.

Abstract: A field-sequential color architecture is included in a reflective mode display. The reflective mode display may be a direct-view display such as an interferometric modulator display. The reflective mode display may include three or more different subpixel types, each of which corresponds to a color. Data for each color may be written sequentially to all subpixels of the display. Flashing of a corresponding colored light, e.g., from a front light of the display, may be timed to immediately follow a process of writing data for that color. Colors other than the field color may be used to produce grayscale. The field color may correspond to the most significant bit (MSB) and the other colors may correspond to other bits.

Abstract: A field-sequential color architecture is included in a reflective mode display. The reflective mode display may be a direct-view display such as an interferometric modulator display. In some implementations, the reflective mode display may include three or more different subpixel types, each of which corresponds to a color. In some such implementations, the colors include primary colors. Data for each color may be written sequentially to subpixels for that color, while subpixels of the remaining colors are written to black. Alternatively, data for each color may be written sequentially to all subpixels of the display. Flashing of a corresponding colored light, e.g., from a front light of the display, may be timed to immediately follow a process of writing data for that color.

Abstract: A method and device for manipulating color in a display is disclosed. In one embodiment, a display comprises interferometric display elements formed to have spectral responses that produce white light. In one embodiment, the produced white light is characterized by a standardized white point.

Abstract: Methods and devices for updating an array of display elements using both an active matrix addressing scheme and a passive matrix addressing scheme are described herein. In one embodiment, the method comprises selecting between an active matrix addressing scheme and a passive matrix addressing scheme. The method further comprises driving the array of display elements using the selected addressing scheme.

Abstract: Methods and devices for reducing the voltage required to update an array of display elements having variable capacitance are described herein. In one implementation, the method includes driving a display element to a first state using a reset drive line. The method further includes driving the display element to a second state using a column drive line.