Abstract: The semiconductor device system includes multiple stacked substantially identical semiconductor devices each including a first side and an opposing second side. First and second pads are disposed at the first side of the semiconductor device, while third and fourth pads are disposed at the second side of the semiconductor device. First interface circuit is electrically coupled to the first pad and the third pad, while second interface circuit is electrically coupled to the second pad and the fourth pad. The second interface circuit is separate and distinct from the first interface circuit. At least one first semiconductor device of the multiple semiconductor devices is offset from other of the multiple semiconductor devices such that the fourth pad on the first semiconductor device is aligned with, and electrically connected to, the first pad on an adjacent one of the multiple semiconductor devices.

Abstract: An LED lamp or LED lighting assembly includes a light guide having opposed major surfaces configured to propagate light by total internal reflection and a light input edge extending between the major surfaces. A light source is adjacent to the light input edge and is configured to edge light the light guide. In some embodiments, the light source is moveable relative to the light input edge, and the spectrum of the light output from the light guide may be adjusted by movement of the light source relative to the light input edge.

Abstract: A method for calibrating a communication channel coupling first and second components includes transmitting a data signal from the first component to the second component on the communication channel, and sensing a characteristic, such as phase, of the data signal on the second component. Information about the sensed characteristic is fed back to the first component using an auxiliary channel. An adjustable parameter, such as phase, for the transmitter is adjusted on the first component in response to the information. Also, a characteristic of a data signal received from the transmitter on the second component is sensed and used to adjust an adjustable parameter for the receiver on the first component.

Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation.

Abstract: A structure for delivering power is described. In some embodiments, the structure can include conductors disposed on two or more layers. Specifically, the structure can include a first set of interdigitated conductors disposed on a first layer and oriented substantially along an expected direction of current flow. At least one conductor in the first set of interdigitated conductors may be maintained at a first voltage, and at least one conductor in the first set of interdigitated conductors may be maintained at a second voltage, wherein the second voltage is different from the first voltage. The structure may further include a conducting structure disposed on a second layer, wherein the second layer is different from the first layer, and wherein at least one conductor in the conducting structure is maintained at the first voltage.

Abstract: An integrated receiver supports adaptive receive equalization. An incoming bit stream is sampled using edge and data clock signals derived from a reference clock signal. A phase detector determines whether the edge and data clock signals are in phase with the incoming data, while some clock recovery circuitry adjusts the edge and data clock signals as required to match their phases to the incoming data. The receiver employs the edge and data samples used to recover the edge and data clock signals to note the locations of zero crossings for one or more selected data patterns. The pattern or patterns may be selected from among those apt to produce the greatest timing error. Equalization settings may then be adjusted to align the zero crossings of the selected data patterns with the recovered edge clock signal.

Abstract: An integrated circuit device includes a transmitter circuit operable to transmit a timing signal over a first wire to a DRAM. The DRAM receives a first signal having a balanced number of logical zero-to-one transitions and one-to-zero transitions and samples the first signal at a rising edge of the timing signal to produce a respective sampled value. The device further includes a receiver circuit to receive the respective sampled value from the DRAM over a plurality of wires separate from the first wire. In a first mode, the transmitter circuit repeatedly transmits incrementally offset versions of the timing signal to the DRAM until sampled values received from the DRAM change from a logical zero to a logical one or vice versa; and in a second mode, it transmits write data over the plurality of wires to the DRAM according to a write timing offset generated based on the sampled values.

Abstract: An integrated circuit is disclosed that includes a receiver circuit to receive duobinary data symbols from a first signaling lane. The receiver circuit includes sampling circuitry to determine symbol state, and a duobinary decoder. The duobinary decoder is coupled to the sampling circuitry and converts the detected states to a PAM2 coded symbol stream. A decision-feedback equalizer (DFE) is provided that has inputs coupled to the sampling circuitry in parallel with the duobinary decoder. The DFE cooperates with the sampling circuitry to form a feedback path, such that the duobinary decoder is external to the feedback path.

Abstract: This disclosure presents a method of canceling inductance-dominated crosstalk using a capacitive coupling circuit; it also presents a method of calibrating, selecting and programming a capacitance value used for coupling, so as to add a derivative of each aggressor signal to each victim signal, and thereby negate crosstalk that would otherwise be seen by a given receiver. In the context of a multiple-line bus, cross-coupling circuits may be used between each pair of “nearest neighbors,” with values calibrated and used for each particular transmitter-receiver pair. Embodiments are also presented which address crosstalk induced between lines that are not nearest neighbors, such as, for example, for use in a differential signaling system.

Abstract: A signal on a transmitter tracks noise on a ground node in a manner decoupled from a positive node of a power supply. The signal is transmitted from the transmitter to the receiver. A reference voltage is generated on the receiver to track noise on a ground node in the receiver. Consequently, the received signal and the reference voltage have substantially the same noise characteristics, which become common mode noise that can be cancelled out when these two signals are compared against each other. In a further embodiment, the reference voltage is compared against a predetermined calibration pattern. An error signal is generated based on a difference between the sampler output and the predetermined calibration pattern. The error signal is then used to adjust the reference voltage so that the DC level of the reference voltage is positioned substantially in the middle of the received signal.

Abstract: In a memory module having an integrated-circuit buffer device coupled to one or more integrated-circuit memory devices, the buffer device receives write data signals from an external control component via a set of data inputs, the write data signals indicating write data to be stored within one or more of the memory devices. Logic within the buffer device sequentially applies controllable termination impedance configurations at the data inputs based on an indication received from the control component and an internal state of the buffer device, applying a first controllable termination impedance configuration at each of the data inputs during a first internal state of the buffer device corresponding to the reception of the write data signals on the data inputs, and applying a second controllable termination impedance configuration at each of the data inputs during a second internal state of the buffer device that succeeds the first internal state.

Abstract: A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.

Abstract: The disclosed embodiments relate to components of a memory system that support error detection and correction by means of storage and retrieval of error correcting codes. In specific embodiments, this memory system includes a memory device, which further contains a memory bank. During operation, the memory device receives a request to concurrently access a data word at a first row in a first storage region of the memory bank and error information associated with the data at a second row in a second storage region of the memory bank. Moreover, the memory request includes a first row address identifying the first row and a second row address identifying the second row. Next, the memory device routes the first row address and the second row address to a first row decoder and a second row decoder in the memory bank, respectively.

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract: Encoder and decoder circuits that encode and decode a series of data words to/from a series of code words. The data words include L symbols. The code words include M symbols, where M is larger than L. A set of tightly coupled M links to convey respective symbols in each of the series of code words. The code words are selected such that between every two consecutive code words in a series of code words, an equal number of transitions from low to high and high to low occur on a subset of the M-links.

Abstract: A phase-locked loop circuit comprises a multi-phase oscillator having a plurality of coupled oscillators. A calibration module detects mismatches between frequency characteristics of the different oscillators in the phase-locked loop circuit during a calibration process. The calibration module then calibrates the various oscillators to compensate for the detected mismatch. Once calibrated, the phase-locked loop circuit can operate with little or no performance degradation despite the mismatch in frequency characteristics between the different oscillators.

Abstract: Die-to-die interconnect structures are leveraged to form the inductive component of an LC oscillator, thus yielding an LC tank distributed across multiple IC dies rather than lumped in a single die. By this arrangement, reliance on area/power-consuming on-chip inductors may be reduced or eliminated, and phase-aligned clocks may be extracted from the LC tank within each of the spanned IC dies, obviating multiple oscillator instances or complex phase alignment circuitry.

Abstract: A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.

Abstract: A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N?1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as fixed codes less than 16 bytes, and for example as short as 2 bytes long.

Abstract: A memory storage scheme specially adapted for wear leveling (or other reorganization of logical memory space). Memory space includes a logical memory space of M addressable blocks of data, stored as rows or pages, and N substitute rows or pages. Data is periodically shuffled by copying data from one of the M addressable blocks to a substitute row, with the donating row then becoming part of substitute memory space, available for ensuing wear leveling operations, using a stride address. The disclosed techniques enable equation-based address translation, obviating need for an address translation table. An embodiment performs address translation entirely in hardware, for example, integrated with a memory device to perform wear leveling or data scrambling, in a manner entirely transparent to a memory controller. In addition, the stride address can represent an offset greater than one (e.g., greater than one row) and can be dynamically varied.