Abstract: Embodiments of a memory system that communicates bidirectional data between a memory controller and a memory IC via bidirectional links using half-duplex communication are described. Each of the bidirectional links conveys write data or read data, but not both. States of routing circuits in the memory controller and the memory IC are selected for a current command being processed so that data can be selectively routed from a queue in the memory controller to a corresponding bank set in the memory IC via one of the bidirectional links, or to another queue in the memory controller from a corresponding bank set in the memory IC via another of the bidirectional links. This communication technique reduces or eliminates the turnaround delay that occurs when the memory controller transitions from receiving the read data to providing the write data, thereby eliminating gaps in the data streams on the bidirectional links.

Abstract: An integrated circuit device includes a transmitter circuit including an output driver. The integrated circuit device includes a first register to store a value representative of a drive strength setting associated with the transmitter circuit such that the output driver outputs data in accordance with the drive strength setting. The integrated circuit device also includes a second register to store a value representative of an equalization setting associated with the transmitter circuit such that the output driver outputs data in accordance with the equalization setting. The integrated circuit device further includes a third register to store a value representative of a slew rate setting associated with the transmitter circuit such that the output driver outputs data in accordance with the slew rate setting.

Abstract: A multi-chip package with signal line compression for testing of the multi-chip package. The multi-chip package includes an interposer and two or more integrated circuits attached to the interposer. The interposer includes multiple data signal lines for data communications between the two integrated circuits. The data signal lines are also coupled to one or more test contacts through an interface circuit. The number of test contacts is smaller than the number of signal lines, which allows a large number of signal lines to be tested with a smaller number of test contacts.

Abstract: The gate of the access transistor of a 1 transistor 1 resistor (1T1R) type RRAM cell is biased relative to the source of the access transistor using a current mirror. Under the influence of a voltage applied across the 1T1R cell (e.g., via the bit line), the RRAM memory element switches from a higher resistance to a lower resistance. As the RRAM memory element switches from the higher resistance to the lower resistance, the current through the RRAM cell switches from being substantially determined by the higher resistance of the RRAM device (while the access transistor is operating in the linear region) to being substantially determined by the saturation region operating point of the access transistor.

Abstract: A single-ended receiver compares signal levels representing current symbols to levels representing immediately preceding symbols to resolve the symbols. The receiver applies offsets selected based on resolved prior symbols to interpret successive like-symbols.

Abstract: A transmitter for providing channel equalization that includes a first driver and second driver having a high pass filter. The first driver generates a first output signal representing a digital input signal. The second driver generates a second output signal representing a high pass filtered version of the digital input signal. The first and second output signals are summed to provide a third output signal that is channel equalized for transmission over a channel.

Abstract: A signaling system includes a pre-emphasizing transmitter and an equalizing receiver coupled to one another via a high-speed signal path. The receiver measures the quality of data conveyed from the transmitter. A controller uses this information and other information to adaptively establish appropriate transmit pre-emphasis and receive equalization settings, e.g. to select the lowest power setting for which the signaling system provides some minimum communication bandwidth without exceeding a desired bit-error rate.

Abstract: A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.

Abstract: A stacked semiconductor device is disclosed that includes a plurality of semiconductor dies. Each die has oppositely disposed first and second surfaces, with pads formed on each of the surfaces. A plurality of through-vias connect respective pads on the first surface to respective pads on the second surface. The through-vias include a first group of through-vias coupled to respective I/O circuitry on the semiconductor die and a second group of through-vias not coupled to I/O circuitry on the semiconductor die. The plurality of semiconductor dies are stacked such that the first group of through-vias in a first one of the plurality of semiconductor dies are aligned with respective ones of at least a portion of the second group of through-vias in a second one of the plurality of semiconductor dies.

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract: A memory system that supports error detection and correction (EDC) coverage. The memory system includes a memory module with at least two groups of memory devices that store data and another memory device that stores error checking information (e.g., Error Correcting Code) for both groups of memory devices. The memory module also includes a memory buffer that determines an address for accessing the error checking information based on whether data is transferred with the first group of memory devices or the second group of memory devices. Alternatively, the memory controller may determine the address for accessing the error checking information to reduce or eliminate the need for a memory buffer.

Abstract: An integrated circuit device includes a transmitter circuit including an output driver. The integrated circuit device includes a first register to store a value representative of a drive strength setting associated with the transmitter circuit such that the output driver outputs data in accordance with the drive strength setting. The integrated circuit device also includes a second register to store a value representative of an equalization setting associated with the transmitter circuit such that the output driver outputs data in accordance with the equalization setting. The integrated circuit device further includes a third register to store a value representative of a slew rate setting associated with the transmitter circuit such that the output driver outputs data in accordance with the slew rate setting.

Abstract: A signaling system includes a pre-emphasizing transmitter and an equalizing receiver coupled to one another via a high-speed signal path. The receiver measures the quality of data conveyed from the transmitter. A controller uses this information and other information to adaptively establish appropriate transmit pre-emphasis and receive equalization settings, e.g. to select the lowest power setting for which the signaling system provides some minimum communication bandwidth without exceeding a desired bit-error rate.

Abstract: An integrated circuit device transmits to a dynamic random access memory (DRAM) one or more commands that specify programming of a digital control value within the DRAM, the digital control value indicating a termination impedance that the DRAM is to couple to a data interface of the DRAM in response to receiving a write command and during reception of write data corresponding to the write command, and that the DRAM is to decouple from the data interface after reception of the write data corresponding to the write command. Thereafter, the integrated circuit device transmits to the DRAM a write command indicating that write data is to be sampled by a data interface of the DRAM during a first time interval and that cause the DRAM to couple the termination impedance to the data interface during the first time interval and decouple the termination impedance from the data interface after the first time interval.

Abstract: Systems and methods are disclosed for processing data. In accordance with one implementation, a processor may include an arithmetic logic unit (ALU). The processor may also include pipeline circuitry to, in a non-error correction code (ECC) operating mode, execute a sequence of single-cycle instructions in the ALU in a first execution stage, and in an ECC operating mode, execute the same sequence of single-cycle instructions in the ALU in a second execution stage instead of the first execution stage. Further, the processor may include mode control signaling to configure the pipeline circuitry between the non-ECC and ECC operating modes.

Abstract: Systems, devices, and methods are disclosed for leveling wear on memory. Such systems, methods, and devices include the memory, one or more wear leveling engines and one or more wear leveling policies, a were leveling mechanism comprising one of the wear leveling engines and one of the wear leveling policies. Further embodiments may include a decision engine having a write traffic signature mechanism wherein the decision engine selects a wear leveling engine and wear leveling policy based upon receiving a write traffic signature of the memory from the write traffic signature mechanism and receiving status data from the memory.

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract: A memory device is placed in a mode that redefines the command set used to control the memory device. This may occur either in anticipation of the memory system falling out of calibration, or after it has already fallen out of calibration. The redefined command set is designed such that it may be reliably received by the memory device at the specified rate even if the memory system has fallen out of calibration. The redefined command set is then used to issue command(s) to recalibrate one or more communication links such that they can exchange data, commands, and/or addresses at a specified rate. After recalibration, the memory device is returned to responding to the original command set.

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract: Embodiments generally relate to a command protocol and/or related circuits and apparatus for communication between a memory device and a memory controller. In one embodiment, the memory controller includes an interface for transmitting commands to the memory device, wherein the memory device includes bitline multiplexers, and accessing of memory cells within the memory device is carried out by a command protocol sequence that includes a wordline selection, followed by bitline selections by the bitline multiplexers. In another embodiment, a memory device includes bitline multiplexers and further includes an interface for receiving a command protocol sequence that specifies a wordline selection followed by bitline selections by the bitline multiplexers.