Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device.

Abstract: Described are methods and circuits for margin testing digital receivers. These methods and circuits prevent margins from collapsing in response to erroneously received data, and can thus be used in receivers that employ historical data to reduce intersymbol interference (ISI). Some embodiments detect receive errors for input data streams of unknown patterns, and can thus be used for in-system margin testing. Such systems can be adapted to dynamically alter system parameters during device operation to maintain adequate margins despite fluctuations in the system noise environment due to e.g. temperature and supply-voltage changes. Also described are methods of plotting and interpreting filtered and unfiltered error data generated by the disclosed methods and circuits. Some embodiments filter error data to facilitate pattern-specific margin testing.

Abstract: A lighting assembly includes a light engine and a light guide. The light engine edge lights the light guide and includes a control assembly that controls light output according to one or more parameters to produce light output from the lighting assembly with a desired characteristic. Lighting assemblies are combined to form a modular lighting assembly.

Abstract: Embodiments of a memory device are described. This memory device includes a signal connector which is electrically coupled to a command/address (CA) link, and an interface circuit, which is electrically coupled to the signal connector, and which receives CA packets via the CA link. A given CA packet includes an address field having address information corresponding to one or more storage locations in the memory device. Moreover, the memory device includes control logic having two operating modes, where, during a first operating mode, the control logic decodes address information in the CA packets using full-field sampling, and, during the second operating mode, the control logic decodes a portion of the address information in the CA packets using sub-field sampling.

Abstract: A stacked memory is disclosed including a first integrated circuit memory chip having first storage locations and a second integrated circuit memory chip disposed in a stacked relationship with the first integrated circuit memory chip. The second integrated circuit memory chip has second storage locations. Redundant storage is provided including a first storage area dedicated to storing failure address information of failure address locations in the first or second integrated circuit memory chips. The redundant storage includes a second storage area dedicated to storing data corresponding to the failure address locations. Matching logic matches incoming data transfer addresses to the stored failure address information.

Abstract: A memory device is transitioned to a low-power mode in which an active-mode resource required to receive memory access commands from a memory controller at a first command-signaling frequency of the memory device is disabled. A first memory access command, transmitted by the memory controller, is received within the memory device using an alternative signaling resource during a transitional interval in which the active-mode resource is re-enabled.

Abstract: Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.

Abstract: An integrated circuit equalizes a data signal expressed as a series of symbols. The symbols form data patterns with different frequency components. By considering these patterns, the integrated circuit can experiment with equalization settings specific to a subset of the frequency components, thereby finding an equalization control setting that optimizes equalization. Optimization can be accomplished by setting the equalizer to maximize symbol amplitude.

Abstract: A sensing device with an odd-symmetry grating projects near-field spatial modulations onto a closely spaced photodetector array. Due to physical properties of the grating, the spatial modulations are in focus for a range of wavelengths and spacings. The spatial modulations are captured by the array, and photographs and other image information can be extracted from the resultant data. Used in conjunction with a converging optical element, versions of these gratings provide depth information about objects in an imaged scene. This depth information can be computationally extracted to obtain a depth map of the scene.

Abstract: An integrated circuit device includes a transmitter circuit including an output driver. The integrated circuit device includes a first register to store a value representative of a drive strength setting associated with the transmitter circuit such that the output driver outputs data in accordance with the drive strength setting. The integrated circuit device also includes a second register to store a value representative of an equalization setting associated with the transmitter circuit such that the output driver outputs data in accordance with the equalization setting. The integrated circuit device further includes a third register to store a value representative of a slew rate setting associated with the transmitter circuit such that the output driver outputs data in accordance with the slew rate setting.

Abstract: A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.

Abstract: Components of a memory system, such as a memory controller and memory device, which detect accumulated memory read disturbances and correct such disturbances before they reach a level that causes errors. The memory device includes a memory array and a disturbance control circuit. The memory array includes a plurality of memory rows. Each memory row is associated with a disturbance warning circuit having a state that corresponds to an accumulated disturbance in the memory row. The disturbance control circuit determines, responsive to an activation of a memory row of the plurality of memory rows specified by a row access command, whether the disturbance condition is present in the memory row based on the state of the disturbance warning circuit associated with the memory row. If a disturbance condition is present, the disturbance control circuit causes a recovery operation to be performed on the memory row to reduce the accumulated disturbances.

Abstract: A signaling circuit having a selectable-tap equalizer. The signaling circuit includes a buffer, a select circuit and an equalizing circuit. The buffer is used to store a plurality of data values that correspond to data signals transmitted on a signaling path during a first time interval. The select circuit is coupled to the buffer to select a subset of data values from the plurality of data values according to a select value. The equalizing circuit is coupled to receive the subset of data values from the select circuit and is adapted to adjust, according to the subset of data values, a signal level that corresponds to a data signal transmitted on the signaling path during a second time interval.

Abstract: An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal.

Abstract: An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.

Abstract: A memory space of a module connected to a memory controller via a memory interface may be used as a command buffer. Commands received by the module via the command buffer are executed by the module. The memory controller may write to the command buffer out-of-order. The memory controller may delay or eliminate writes to the command buffer. Tags associated with commands are used to specify the order commands are executed. A status buffer in the memory space of the module is used to communicate whether commands have been received or executed. Information received via the status buffer can be used as a basis for a determination to re-send commands to the command buffer.

Abstract: A frequency synthesizer generates a wide range of frequencies from a single oscillator while achieving good noise performance. A cascaded phase-locked loop (PLL) circuit includes a first PLL circuit with an LC voltage controlled oscillator (VCO) and a second PLL circuit with a ring VCO. A feedforward path from the first PLL circuit to the second PLL circuit provides means and signal path for cancellation of phase noise, thereby reducing or eliminating spur and quantization effects. The frequency synthesizer can directly generate in-phase and quadrature phase output signals. A split-tuned ring-based VCO is controlled via a phase error detection loop to reduce or eliminate phase error between the quadrature signals.

Abstract: A signaling system includes a pre-emphasizing transmitter and an equalizing receiver coupled to one another via a high-speed signal path. The receiver measures the quality of data conveyed from the transmitter. A controller uses this information and other information to adaptively establish appropriate transmit pre-emphasis and receive equalization settings, e.g. to select the lowest power setting for which the signaling system provides some minimum communication bandwidth without exceeding a desired bit-error rate.

Abstract: Chip selection and internal clocking functions are enabled within an integrated circuit memory component in response to a single “chip-enable” control signal, thus reducing memory system pin count and wiring complexity relative to designs that require separate chip-select and clock-enable signals. Internal clocking logic may also be provided to generate timing signal edges more precisely limited to the number required to complete a given memory component operation, reducing the number of unnecessary timing events and lowering power consumption. Further, internal read and write clock signals may be speculatively enabled within the memory component to more quickly stabilize those clocks in preparation for data transmission and reception operations, potentially lowering memory access latency.

Abstract: A content addressable memory can include an array of memory cells having multiple memory elements, such as RRAM elements, to store data based on a plurality resistive states. A common switching device, such as a transistor, can electrically couple a plurality of the multiple memory elements with a matchline during read, write, erase, and search operations. In search operations, the memory cells can receive a search word and selectively discharge a voltage level on the matchline based on the data stored by the memory elements and the search word provided to the memory elements. The voltage level of the matchline can indicate whether the search word matched the data stored in the memory cells. The content addressable memory can potentially have an effective memory cell sizing under 0.5F2 depending on the number of layers of memory cells formed over the switching device.