Abstract: A second memory has n banks accessible in parallel, and stores pixel data. An input DMA controller respectively transfers the pixel data stored in the second memory to n multiply-accumulate units by using n input channels. A sequence controller controls the input DMA controller so as to cause a first input channel to transfer the pixel data in a first pixel space of the input bank to a first multiply-accumulate unit and cause a second input channel to transfer the pixel data in a second pixel space of the same input bank to a second multiply-accumulate unit.

Abstract: A semiconductor device includes a data path having a plurality of processor elements, a state transition management unit managing a state of the data path, and a parallel computing unit in which an input and an output of data is sequentially carried out, and an output of the parallel computing unit is capable of being handled by the plurality of processor elements.

Abstract: A semiconductor device includes a plurality of processors capable of executing a plurality of virtual machines and a cache memory. Each of the plurality of virtual machines executes a different operating system from each other. A hypervisor sets allocation information so as to allocate ways of the cache memory which can be used by the virtual machine. When outputting a memory access request, each of the processors outputs virtual machine identification in association with the information memory access request. When the memory access request is not a cache hit, the cache memory selects a way to be replaced data based on the virtual machine identification information and the allocation information.

Abstract: A semiconductor chip includes a first common marker generating circuit and a second common marker generating circuit. The first common marker generating circuit is configured to send a first request signal to the second common marker generating circuit, the first request signal requesting a common marker to be sent to a second trace memory, and to send the common marker to a first trace memory, when a second request signal is received from the second common marker generating circuit, the second request signal requesting the common marker to be sent to the first trace memory. The second common marker generating circuit is configured to send the common marker to the second trace memory and to send the second request signal to the first common marker generating circuit, if a second core is running a user program at a time when the first request signal is received.

Abstract: A performance of a semiconductor device including a main MOSFET and a sensing MOSFET having a double-gate structure including a gate electrode and a field plate electrode inside a trench is improved. A main MOSFET including a gate electrode and a field plate electrode inside a second trench and a sensing MOSFET for electric-current detection including a gate electrode and a field plate electrode inside a fourth trench are surrounded by different termination rings, respectively.

Abstract: Apparatuses, devices, and systems for controlling power supply to a load are described. A system can include a power stage and a power management integrated circuit (PMIC). The PMIC can include a controller configured to determine a load is operating under a low power mode. The controller can, in response to the load operating under the low power mode, operate the PMIC to supply power to the load. The controller can determine the load is operating under a high power mode. The controller can, in response to the load operating under the high power mode, operate at least one of the PMIC and the power stage to supply power to the load.

Abstract: Systems and methods for runtime antenna matching for wireless power devices are described. The integrated circuit can include a controller. The integrated circuit can further include a circuit configured to sense voltage in a switching converter. The circuit can be further configured to determine whether a negative voltage spike is present or absent in the sensed voltage. The controller can be configured to, based on the presence or the absence of the negative voltage spike in the sensed voltage, tune a capacitance of an antenna interface circuit between the switching converter and an antenna to perform impedance matching.

Abstract: A semiconductor device includes an aluminum layer, a passivation film, and a protective film arranged between the aluminum layer and the passivation film. A plurality of aluminum regions are formed in the aluminum layer. A width of a gap between the adjacent aluminum regions is equal to or less than twice a thickness of the protective film 140. The gap is filled with the protective film 140.

Abstract: A semiconductor device according to an embodiment includes a level detection unit that validates a level detection signal LD when a value indicated by stream data exceeds a threshold condition value, a ring buffer that cyclically stores internal data generated from the stream data in a storage area that is set within a predetermined address range, a data processing unit that operates with a bus clock and performs data processing using the internal data acquired from the ring buffer, and an address adjustment unit that adjusts a read address indicating a read start position of the ring buffer to a position that becomes a predetermined difference from a write address of the ring buffer at that time in accordance with a start of generation of the bus clock, and generates a bus clock during a period in which the level detection signal LD is valid.

Abstract: Provided is a technology capable of initializing data in memory cells at a relatively high speed while suppressing an area increase. Based on a fact that the reset signal is turned to a high level, a control circuit of a semiconductor device turns a first transistor to an OFF state, a plurality of word lines to a selection state, a precharge circuit to the OFF state, column switches for writing to an ON state, and column switches for reading to the OFF state, causes write circuits to turn first bit lines and second bit lines to a low level and a high level, respectively, and initializes a plurality of memory cells.

Abstract: Apparatuses and circuits for overcurrent protection are described. A circuit can be connected to one of a first hybrid switching device and a second hybrid switching device in a half bridge circuit. The first hybrid switching device can include a first wide-bandgap (WBG) device and a first FET in a cascode arrangement. The first WBG device can have a higher breakdown voltage than the first FET and a larger band gap than the first FET. The second hybrid switching device can include a second hybrid switching device including a second WBG device and a second FET in a cascode arrangement. The second WBG device can have a higher breakdown voltage than the second FET and a larger band gap than the second FET. The circuit can monitor a drive current of the half bridge circuit for detecting an overcurrent condition of the half bridge circuit.

Abstract: In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.

Abstract: A semiconductor device includes first and second processor cores configured to perform a lock step operation and including first and second scan chains. The semiconductor device further includes a scan test control unit that controls a scan test of the first and second processor cores using the first and second scan chains, and a start-up control unit that outputs a reset signal for bringing the first and second processor cores into a reset state. The start-up control unit outputs an initialization scan request before the start of a lock step operation, and the scan test control unit performs an initialization scan test operation on the first and second processor cores by using an initialization pattern.

Abstract: Semiconductor devices for driving transistors in a power device are described. A semiconductor device can include a voltage source configured to provide a fixed bias voltage to a first device implemented as a common gate device. The semiconductor device can further include a second device connected in series with the first device. The current output of the second device can be connected to a source terminal of the first device. The semiconductor device can further include a driver configured to drive the second device to perform current control on the first device.

Abstract: A height of an upper surface of a control gate electrode is lower than a highest position of a lower surface of a silicide layer on a memory gate electrode adjacent to the control gate electrode via an ONO film. As a result, a structure in contact with the ONO film between the control gate electrode and the memory gate electrode is only the control gate electrode and the memory gate electrode made of polysilicon.

Abstract: A semiconductor device includes: a local memory outputting a plurality of pieces of weight data in parallel; a plurality of product-sum operation units corresponding to the plurality of pieces of weight data; and a plurality of unit selectors corresponding to the product-sum operations units, supplied with a plurality of pieces of input data in parallel, selecting the one piece of input data from the supplied plurality of pieces of input data according to a plurality of pieces of additional information each indicating a position of the input data to be calculated with the corresponding product-sum arithmetic unit calculator in the pieces of input data, and outputting the selected input data. Each of the plurality of product-sum arithmetic units performs a product-sum operation between the weight data different from each other in the plurality of pieces of weight data and the input data outputted from the corresponding unit selector.

Abstract: There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a mask, the plurality of first wirings and the plurality of first dummy wirings close thereto are densely formed, and the second dummy wiring is formed so as to surround a periphery of the second wiring sparsely formed directly above an analog circuit portion.

Abstract: Systems and methods for operating a wireless power transfer device are described. A circuit can generate a first signal that indicates a voltage at a node between a first high-side (HS) transistor and a first low-side (LS) transistor in a switching converter falling below ground. The circuit can delay a gate-source voltage of a second LS transistor in the switching converter to generate a second signal. The circuit can merge the first signal and the second signal to generate a third signal. A controller can use the third signal to trigger a rising edge of a command signal to turn on the first LS transistor at a specific time. The first LS transistor being turned on at the specific time reduces a diode conduction time of a body diode of the first LS transistor.

Abstract: The present invention suppresses an increase in manufacturing cost and reduces switching noise. A field-effect transistor having a gate electrode embedded in a trench in an upper surface of a semiconductor substrate, a source region formed in the semiconductor substrate, and a drain region formed on a lower surface of the semiconductor substrate is provided with a gate wiring formed on the semiconductor substrate and being electrically connected to the gate electrode, a gate pad formed on the semiconductor substrate, a first resistor connected between the gate pad and the gate wiring and being configured to function when the field-effect transistor is turned ON, a second resistor connected between the gate pad and the gate wiring and being configured to function when the field-effect transistor is turned OFF, and a rectifier diode included in the first resistor or the second resistor between the gate pad and the gate wiring.

Abstract: A semiconductor device including an element isolation in a trench formed in an upper surface of a semiconductor substrate, a trench isolation including a void in a trench directly under the element isolation, and a Cu wire with Cu ball connected to a pad on the semiconductor substrate, is formed. The semiconductor device has a circular trench isolation arrangement prohibition region that overlaps the end portion of the Cu ball in plan view, and the trench isolation is separated from the trench isolation arrangement prohibition region in plan view.