Abstract: Methods and systems for operating a voltage regulator are described. An apparatus may receive a feedback signal from a power stage. The feedback signal may be one of a sensed signal measured from an output of the power stage and a calibration signal representing a fixed voltage. The apparatus may convert the feedback signal into a correction signal. The apparatus may further adjust a synthetic current using the correction signal, the synthetic current being associated with the power stage.

Abstract: Systems and methods for wireless power transfer systems are described. A controller can be coupled to a power rectifier configured to rectify alternating current power into direct current power. The power rectifier can include a first high side transistor, a second high side transistor, a first low side transistor, and a second low side transistor. The controller can be configured to selectively switch on one or more of the first high side transistor, the second high side transistor, the first low side transistor, and the second low side transistor to operate a wireless power receiver under one of a full bridge rectifier mode and a voltage doubler mode.

Abstract: The present document relates to a power converter. The power converter may be configured to convert an input voltage at the input of the power converter into an output voltage at an output of the power converter. The power converter may comprise a pass device, a feedback circuit, and a bypass circuit. The pass device may be coupled between the input of the power converter and the output of the power converter. The feedback circuit may be configured to generate, in a voltage regulation mode, a drive signal for driving a control terminal of the pass device. The bypass circuit may be configured to apply, in a bypass mode, a predetermined voltage to the control terminal of the pass device.

Abstract: An insulating film is formed on a semiconductor substrate, and a silicon film is formed on the insulating film. The silicon film and the insulating film in a transistor forming region are removed, and the silicon film and the insulating film in a transistor forming region are left. An insulating film is formed on the semiconductor substrate in the transistor forming region. A Hf-containing film is formed on the insulating film and the silicon film, and a silicon film is formed on the Hf-containing film. Then, a gate electrode is formed by patterning the silicon film, and a gate electrode is formed by patterning the silicon film. A gate insulating film under the gate electrode is formed by the insulating film, and a gate insulating film under the gate electrode is formed by the insulating film and the Hf-containing film.

Abstract: A memory cell which is a non-volatile memory cell includes a gate insulating film having a charge storage layer capable of retaining charge and a memory gate electrode formed on the gate insulating film. The charge storage layer includes a first insulating film containing hafnium and silicon and a second insulating film formed on the first insulating film and containing hafnium and silicon. Here, a hafnium concentration of the first insulating film is lower than a hafnium concentration of the second insulating film, and a bandgap of the first insulating film is larger than a bandgap of the second insulating film.

Abstract: A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction. Further, a width of the fin in a region in which the memory gate electrode is arranged via the second gate insulating film having a film thickness larger than the first gate insulating film is smaller than a width of the fin in a region in which the control gate electrode is arranged via the first gate insulating film.

Abstract: A semiconductor device is provided. The semiconductor device includes an input/output cell, a core logic circuit, a first power supply cell, a second power supply cell, a third power supply cell and a fourth power supply cell. Each of the power supply cells includes a protection circuit and a bidirectional diode.

Abstract: In an embodiment, an apparatus is disclosed that includes a duty cycle controller. The duty cycle controller includes a tuning circuit comprising a first field-effect transistor. The first field-effect transistor is configured to implement a capacitor. The duty cycle controller further includes an edge delay circuit. The edge delay circuit includes a second field-effect transistor that, when activated by an input clock signal of the duty cycle controller, is configured to connect a voltage source to an output clock signal of the duty cycle controller. The edge delay circuit further includes a third field-effect transistor that, when activated, is configured to connect the first field-effect transistor of the tuning circuit to the output clock signal.

Abstract: A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced.

Abstract: Systems and methods for controlling data transaction between master and slave devices are described. A master device can be connected to multiple slave devices that can operate under one of a first, a second, and a third operation modes. The first operation mode can cause the master device to perform data transactions with the multiple slave devices via a network element and the multiple slave devices can be connected to one another via the network element. The second operation mode can disconnect the master device from the multiple slave devices, and multiple agents connected to the multiple slave devices can fulfill the data transactions. The third operation mode can cause the master device to perform data transactions with a first subset of the multiple slave devices via the network element, and can cause the master device to be disconnected from a second subset of the multiple slave devices.

Abstract: A driver for driving a switched-mode power supply is presented. The driver receives a set of input signals. Each input signal is configured for changing a state of an associated power switch from a first state to a second state. The driver generates an output signal to change the state of the associated power switch from the first state to the second state. When the first state is an on state and the second state is an off state, the driver asserts the output signal to change the state of the associated power switch to perform an on-off transition. When the first state is the off state and the second state is the on state, the driver delays the assertion of the output signal to perform an off-on transition by a predetermined delay time, so that the off-on transition is delayed until all intended on-off transitions have occurred.

Abstract: The wiring board has a first region overlapping a first semiconductor device and a second region not overlapping each of the first semiconductor device and a second semiconductor device. A first signal wiring of the wiring board has a first portion in the first region and a second portion in the second region. In a thickness direction of the wiring board, the second portion is between two ground patterns to which a reference potential is supplied, while the first portion has a portion not positioned between two ground patterns to which a reference potential is supplied. The first portion has a first wide portion having a larger width than a width of the second portion.

Abstract: Example implementations include a system of secure decryption by virtualization and translation of physical encryption keys, the system having a key translation memory operable to store at least one physical mapping address corresponding to at least one virtual key address, a physical key memory operable to store at least one physical encryption key at a physical memory address thereof; and a key security engine operable generate at least one key address translation index, obtain, from the key translation memory, the physical mapping address based on the key address translation index and the virtual key address, and retrieve, from the physical key memory, the physical encryption key stored at the physical memory address.

Abstract: A technique capable of normally transmitting a LPM token from a transceiver to a USB device is provided. A semiconductor device includes: a controller including a first interface circuit in conformity with UTMI+ standards; a converting circuit including a second interface circuit in conformity with the UTMI+ standards and a third interface circuit in conformity with ULPI standards, the second interface circuit converting data transmitted from the first interface circuit and received, and the third interface circuit transmitting the converted data; a first circuit analyzing a packet output from the controller and identifying and holding a packet identifier contained in the packet; and a second circuit providing a transmission command, after which a data string containing the packet identifier indicating LPM bringing a USB device to a low power consumption state is added, if the first circuit determines that the packet identifier is the LPM.

Abstract: An apparatus includes an amplifier circuit including a first transistor and a second transistor. The first transistor may include a gate having a gate oxide with a first thickness and a first gate length. The second transistor may include a gate having a gate oxide with a second thickness and a second gate length. The first transistor and the second transistor may be connected in a cascode configuration and the second thickness and the second gate length are greater than the first thickness and the first gate length, respectively.

Abstract: A semiconductor device capable of operating accurately while suppressing the propagation of interference noise, a control method for the semiconductor device, and a control program are provided. The semiconductor device includes a first AD converter of a charge redistribution type sequential comparison type that includes a redundant comparison operation in a sequential comparison operation and outputs a first input signal of an analog differential using a reference voltage to a first output signal of digital, a first pin to which the reference voltage is supplied from the outside, a first variable impedance circuit provided on a signal line between the first AD converter and capable of changing impedance, and a first control circuit 10 that controls the impedance of the first variable impedance circuit according to the operating condition of the first AD converter.

Abstract: A semiconductor device includes: a camera lens that controls an X axis, a Y axis, and a Z axis to perform camera shake correction; a first semiconductor chip that receives data of the X axis and the Y axis of the camera lens; a second semiconductor chip that receives data of the Z axis of the camera lens; and a gyro sensor that acquires camera shake state data, in which the second semiconductor chip is connected to the first semiconductor chip via a chip select signal line, a data signal line, and a clock signal line of SPI communication, and is connected to the gyro sensor via the chip select signal line, the data signal line, and the clock signal line of the SPI communication, and the second semiconductor chip transmits position data of the Z axis to a storage unit of the gyro sensor via the SPI communication.

Abstract: A semiconductor device capable of preventing a sharp variation in current consumption in neural network processing is provided. A dummy circuit outputs dummy data to at least one or more of n number of MAC circuits and causes the at least one or more of n number of MAC circuits to perform a dummy calculation and to output dummy output data. An output-side DMA controller transfers pieces of normal output data from the n number of MAC circuits to a memory, by use of n number of channels, respectively, and does not transfer the dummy output data to the memory. In this semiconductor device, the at least one or more of n number of MAC circuits perform the dummy calculation in a period from a timing at which the output-side DMA controller ends data transfer to the memory to a timing at which the input-side DMA controller starts data transfer from the memory.

Abstract: A semiconductor device includes a crystal oscillator circuit, a first noise application circuit, and a second noise application circuit. The first noise application circuit is connected to the crystal oscillator circuit and is configured to drive a crystal resonator by selectively applying initial noises of opposite phases to a first external terminal and a second external terminal. The second noise application circuit applies a second noise to the first external terminal by amplifying a signal at the first external terminal and returning the amplified signal to the first external terminal, thereby driving an oscillation amplifier and a crystal resonator of the crystal oscillator circuit and shortening a start-up time of the crystal oscillator circuit.

Abstract: An active period that is expressed by a range of a count value t[x] and is a period during which communication of a packet with an outside is permitted and an inactive period that is expressed by a range of the count value t[x] and is a period during which communication of a packet with an outside is prohibited are defined in schedule data. A wireless communication interface communicates a packet with the outside during the active period. A power supply controller cuts off power supplied to the wireless communication interface during the inactive period. A synchronous controller updates a count value of a counter based on a synchronous data value in the received packet during a reception operation of the packet, define the synchronous data value based on the updated count value t[y] during a transmission operation of the packet, and store it in the packet to be transmitted.