Abstract: A terminal resistor is provided at the end of a bus formed on a wiring substrate. An insulator having a large dielectric loss angle is provided in the vicinity of the terminal resistor to absorb high frequency electromagnetic waves in the vicinity. This arrangement permits successful transmission of digital signals in the GHz region using a conventional terminal resistor.

Abstract: In a method for manufacturing an FET having a gate insulation film with an SiO2 equivalent thickness of 2 nm or more and capable of suppressing the leak current to 1/100 or less compared with existent SiO2 films, an SiO2 film of 0.5 nm or more is formed at a boundary between an Si substrate (polycrystalline silicon gate) and a high dielectric insulation film, and the temperature for forming the SiO2 film is made higher than the source-drain activating heat treatment temperature in the subsequent steps. As such, a shifting threshold voltage by the generation of static charges or lowering of a drain current caused by degradation of mobility can be prevented so as to reduce electric power consumption and increase current in a field effect transistor of a smaller size.

Abstract: A semiconductor integrated circuit device comprising a logical circuit including a MIS transistor formed on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor forming the logical circuit, an oscillation circuit including a MIS transistor formed on the semiconductor substrate, the oscillation circuit being constructed so that the frequency of an oscillation output thereof can be made variable, and a buffer circuit, in which the control circuit is supplied with a clock signal having a predetermined frequency and the oscillation output of the oscillation circuit so that the control circuit compares the frequency of the oscillation output and the frequency of the clock signal to output a first control signal, the oscillation circuit is controlled by the first control signal so that the frequency of the oscillation output corresponds to the frequency of the clock signal, the control of the frequency of the oscillation output being performed in such a manner that

Abstract: Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

Abstract: A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC1) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC2) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2×VDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB1), the level converter circuit (LSC2) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals.

Abstract: The invention provides a semiconductor memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of static memory cells each having a first, second, third, fourth, fifth, and sixth transistors. While each of channels of the first, second, third, and fourth transistors are formed vertical against a substrate of the semiconductor memory device. Each of semiconductor regions forming a source or a drain of the fifth and sixth transistors forms a PN junction against the substrate. According to another aspect of the invention, the SRAM device of the invention has a plurality of SRAM cells, at least one of which is a vertical SRAM cell comprising at least four vertical transistors onto a substrate, and each vertical transistor includes a source, a drain, and a channel therebetween aligning in one aligning line which penetrates into the substrate surface at an angle greater than zero degree.

Abstract: An electronic circuit device has a high-density mount board, on which are disposed a microcomputer, a random access memory, a programmable device which is a variable logic circuit represented by FPGA, and an electrically-rewritable nonvolatile memory which can store the operation program of the microcomputer. The high-density mount board has external mounting pins on the bottom surface so as to be mounted on a mother board in the same manner as a system on-chip multi-chip module. With an intended logic function being set on the programmable device, a hardware-based function to be realized by the electronic circuit device is simulated. With an operation program being written to the nonvolatile memory, a software-based function to be realized is simulated. Consequently, the device facilitates the debugging at early stages of system development, configures a prototype system, and contributes to the time reduction throughout the system development, prototype fabrication and large-scale production.

Abstract: It is aimed at improving the efficiency of data transfer processing and the concurrent data processing on a central processing unit. A data transfer device can independently request a bus access right and output an address to a first bus (IBUS) and a second bus (PBUS). It is possible to solve the state of competing for the bus access right between both buses. While the bus access right of one bus is granted for reading or writing, the bus access right of the other bus can be released. When the data transfer device releases the bus access right for the first bus, a central processing unit can process data. In response to one data transfer start request, the bus access right is requested for one bus and the other bus, There is not used a sequence of requesting the bus access right in response to different data transfer requests for respective buses. It is possible to simplify a handshake sequence of a data transfer request and its acknowledgment.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: A memory card wherein a substrate is affixed to a cap is formed without the projection of substrate edges from a back surface of the cap. The memory card includes a substrate having a sealing member bonded to a recess in the cap. By utilizing a difference in thermal expansion coefficient between the sealing member and the substrate, the substrate is warped so that its central portion projects away from the cap. The shallow recess is deeper than the sum of the thickness of the substrate and the thickness of an adhesive for bonding the substrate to the bottom of the shallow recess, whereby peripheral edges of the substrate retract into the shallow recess without projecting from the back surface of the cap. The cap is shaped as a card several millimeters thick. A memory chip and control chip are incorporated in the sealing member.

Abstract: The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

Abstract: A radio transmitting/receiving device having at least three modules. The first module includes a first function for amplifying a radio frequency signal, demodulating the amplified radio frequency signal to a baseband signal and outputting the same, and a second function for modulating the input baseband signal, converting the modulated baseband signal to a radio frequency and outputting the same. The second module includes a function for amplifying the input radio frequency. The third module includes a function for executing a baseband signal process and controlling respective units according to a transmission/reception sequence based on a communication protocol.

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract: With the objective of providing a semiconductor memory device which is made identical in usability to a static RAM by use of dynamic memory cells and realizes a high-speed memory cycle time, there is provided a pseudo static RAM having a time multiplex mode which, when instructions for a memory operation for reading memory information from each of memory cells each requiring a refresh operation for periodically holding the memory information, or writing the same therein is issued, carries out an addressing-based autonomous refresh operation different from the memory operation before or after the memory operation. The pseudo static RAM includes address signal transition detectors for a row and a column, and a page mode which independently performs a column address selecting operation according to an address signal transition detect signal of the second address signal transition detector.

Abstract: A semiconductor integrated circuit is provided including a plurality of circuit blocks and adapted to cut off the supply of power source voltage to any one of the circuit blocks. The integrated circuit includes an interblock interface circuit provided on a signal path between an elected circuit block and a branch point at which the signal path branches into different branch paths so as to connect to other circuit blocks. The interblock interface circuit includes a signal gate for preventing signal transmission from the elected circuit block to the other circuit blocks, and includes a storage unit for storing a signal right before the power cut-off.

Abstract: In start-up control of a motor in which currents are caused to flow through any two of three phase coils to detect the polarity of a voltage induced in each de-energized phase, thereby determining the corresponding energized phase at start-up thereof, based on the polarity of the detected induced voltage, the levels of induced voltages are detected in addition to the polarity of the induced voltage for the de-energized phase to thereby determine the relationship between the magnitudes thereof, and the energized phase at the start-up is determined based on the relationship of magnitude between the polarity of each induced voltage and the level thereof.

Abstract: A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first reading time; a random access memory DRAM having a second reading time which is more than 100 times shorter than the first reading time; a circuit that includes a control circuit connected to both the FLASH and the DRAM and enabled to control accesses to those FLASH and DRAM; and a plurality of I/O terminals connected to the circuit. As a result, FLASH data is transferred to the DRAM before the DRAM is accessed, thereby matching the access time between the FLASH and the DRAM. Data is written back from the DRAM to the FLASH as needed, thereby keeping data matched between the FLASH and the DRAM and storing the data.

Abstract: The present invention provides a liquid crystal display controller device and method which provides for a full and/or partial display with good display quality and/or low power consumption based on the scanning period for an active scan line being dependent upon a number of reference clock pulses. Some embodiments of the present invention include one or more of the following features: keeping the frequency substantially constant for different numbers of active scan lines, allowing change of the frequency due to characteristics of the LCD, displaying gradation with near linear effective voltage characteristics, displaying graduation data with lower power, or displaying a partial or full screen in a mobile device, for example, a cell phone.

Abstract: In a data processor and a shading apparatus used in the data processor, the data processor selects an address based on the information of a memory or a translation look-aside buffer. Therefore, even when the same data are accessed, a different address at high speed is adopted according to the hardware, object to be processed, processing, etc. A plurality of geometric vectors are given as the parameters for the vertexes of a picture, the vectors are interpolated in the picture, and the luminance of each small area in the figure is calculated using the vectors generated by the interpolation. Therefore, a spotlight or highlight can be expressed with high accuracy and at high speed even when the amount of the hardware and the extent of the picture are small.

Abstract: The present invention provides an optical electronic device which includes a package casing made of plastic, a plurality of metal-made leads which extend between the inside and the outside of the package casing and form electrode terminals at external portions thereof, a lead base which is arranged in an inner bottom of the package and is integrally formed with at least one or the plurality of leads, a support substrate which is fixed onto the lead base and includes a conductive layer of a given pattern on an upper surface thereof, an optical element which is fixed onto the support substrate, an optical fiber which extends between the inside and the outside of the package casing and has an inner end thereof to face the optical element to perform transmission and reception of light between the optical fiber and the optical element, one or a plurality of electronic parts fixed to the leads in the inside of the package casing, and conductive wires which electrically connect electrodes of the optical element, ele