Abstract: An RF IC in which a PLL circuit including a loop filter is incorporated into a semiconductor chip is achieved without increasing power consumption or chip size. The RF IC includes a VCO capable of switching oscillation frequency bands, a variable frequency divider, a phase comparator, and a loop filter, which are contained in the PLL loop. A discrimination circuit discriminates a lead or lag in a phase of an output signal from the variable frequency divider against a reference signal and an automatic band selecting circuit generates a signal for switching the frequency bands of the VCO based on output from the discrimination circuit. While switching the frequency bands of the VCO by means of bisection algorithm, the RF IC detects an optimum frequency band, and adds offset to it to determine a final usable frequency band.

Abstract: An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from electrostatic damage. A high-frequency section of the IC is provided with a protection circuit including diode-connected transistors connected by multiple stages. In addition, there are applied the transistors in which elements thereof are isolated by insulator that can prevent thyristor operation.

Abstract: A memory cell capacitor (C3) of a DRAM is formed by use of a MIM capacitor which uses as its electrode a metal wiring line of the same layer (M3) as metal wiring lines within a logic circuit (LOGIC), thereby enabling reduction of process costs. Higher integration is achievable by forming the capacitor using a high dielectric constant material and disposing it above a wiring layer in which bit lines (BL) are formed. In addition, using 2T cells makes it possible to provide a sufficient signal amount even when letting them operate with a low voltage. By commonizing the processes for fabricating capacitors in analog (ANALOG) and memory (MEM), it is possible to realize a semiconductor integrated circuit with the logic, analog and memory mounted together on one chip at low costs.

Abstract: A semiconductor integrated circuit device which guarantees the characteristics of writing to and reading from the built-in memory even when the manufacturing process conditions are varied, a method of manufacturing the device, and a medium for storing a processing procedure for deciding the number of delay circuits built in the device used for designing. The semiconductor integrated circuit device is provided with a cache memory which includes a BIST circuit composed of a pattern generator, a pattern comparator, an output register, a register controlled by a register control a register write signal; a variable delay circuit controlled by the register; word lines, and a sense amplifier enable signal line. The timing for enabling the sense amplifier is changed and the memory is measured by a BIST circuit at the timing, thereby deciding the optimal timing.

Abstract: One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor.

Abstract: One data processor is provided with an interface for realizing connection with the other data processor. This interface is provided with a function for connecting the other data processor as a bus master to an internal bus of the one data processor, and the relevant other data processor is capable of directly operating peripheral functions that are memory mapped to the internal bus from an external side via the interface. Accordingly, the data processor can utilize the peripheral functions of the other data processor without interruption of the program being executed. In short, one data processor can use in common the peripheral resources of the other data processor.

Abstract: To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.

Abstract: A demodulating semiconductor integrated circuit device used in a wireless communication system of an FM-modulation scheme, wherein a circuit for canceling a frequency offset is made of a digital circuit, so as to make a high-accuracy decision as to received data and prevent error frequency offset cancel due to a pseudo pattern contained in the received data. Consequently, a high-accuracy received data decision is carried out.

Abstract: In a memory card with a newly-added module for performing data communication, data communication is stably performed without receiving a noise effect. As an embodiment of the present invention, a memory card 100 has a thin-plate-shaped holding member 20, a memory section 24 provided as buried in the holding member 20, plural first connection pieces 2-10 connected to the memory section 24, a data communication section 26 provided as buried in the holding member 20, and two connection pieces 11, 12 connected to the data communication section 26. The two second connection pieces 11, 12 are disposed at the end of a row part R1 on which only the plural first connection pieces 2-10 are aligned. One first connection piece 10 positioned at the end of the row part R1 is a ground terminal. That is to say, in the plural first connection pieces 2-10, the first connection piece 10 adjacent to the second connection piece 11 is a ground terminal.

Abstract: A semiconductor device includes a differential level converter circuit that receives a first signal and outputs a second signal of greater amplitude. The differential level converter has a first MISFET pair for receiving the first signal, a second MISFET pair for enhancing the withstand voltage of the first MISFET pair, and a third MISFET pair with cross-coupled gates for latching the second signal from output. The film thickness of the gate insulating films of the second and third MISFET pairs is made thicker than that of the first MISFET pair, and the threshold voltages of the first and second MISFET pairs are made smaller than that of the third MISFET pair. This level converter circuit operates at high speed even if there is a large difference in the signal amplitude before and after level conversion.

Abstract: An electronic circuit device has a high-density mount board (2), on which are disposed a microcomputer (3) and random access memory (7) which are connected to each other through an exclusive memory bus (12) for high-speed data transfer, a programmable device (8) which is a variable logic circuit represented by FPGA, and an electrically-rewritable nonvolatile memory (16) which can store the operation program of the microcomputer. The high-density mount board has external mounting pins on the bottom surface so that it can be mounted on a mother board in the same manner as a system on-chip multi-chip module. With an intended logic function being set on the programmable device, a hardware-based function to be realized by the electronic circuit device can be simulated. With an operation program being written to the nonvolatile memory, a software-based function to be realized can be simulated.

Abstract: A gateway apparatus for performing transfer control of frame data between communication channels includes a routing map that stores ID information about the frame data and information about a communication channel that uses the ID information, and a search engine unit that routes the frame data to a transfer destination on the basis of the ID information of the frame data received and the routing map. The search engine unit does not transfer the frame data to the transfer destination when the ID information about the frame data received is ID information that is not used in the communication channel through which the frame data is received.

Abstract: A polar loop based radio telecommunication apparatus which has a phase control loop for controlling the phase of a carrier outputted from an oscillator for transmitter, and an amplitude control loop for controlling the amplitude of a transmission output signal outputted from a power amplifier circuit, wherein precharge means is provided on a forward path from a current source, through the power amplifier circuit, to a detection circuit, forming the amplitude control loop, for rapidly increasing a control voltage for the power amplifier circuit to a power threshold upon starting transmission.

Abstract: Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

Abstract: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Abstract: When a transmitting oscillator is built in a communication semiconductor integrated circuit device like a high-frequency IC constituting a wireless communication system, the system prevents degradation of the accuracy of control on the output power of a power amplifier due to noise jumped from an output pin of the transmitting oscillator to an input pin for a detected signal (feedback signal) of an output level of the power amplifier. The transmitting oscillator is built in the high-frequency IC. The detected signal of the output level of the power amplifier, which is detected by a coupler, is attenuated to a level slightly higher than the level of noise jumped from the output pin of the transmitting oscillator to the input pin for a feedback signal of an amplitude control loop, which in turn is inputted to the feedback signal input pin of the high-frequency IC.

Abstract: The present invention provides a printed wiring board which has high insulation resistance between wirings and is unlikely to cause failures such as leakages or short circuits, attributable to ion migration even in high temperatures and highly humid environments. The printed wiring board has a circuit comprising a metal conductor on base metal layers created by forming an insulating resin layer 4 on at least one face of an insulating substrate 1 and forming the base metal layers 2 and 5 on the insulating resin layer. In the printed wiring board, at least a part of an upper face of the insulating resin layer existing in spaces 11 between the metal conductors is formed at a position lower than the interface between the base metal layer 5 and the insulating resin layer 4.

Abstract: In a DRAM having a complete hidden refresh function, when data refresh is to be carried out in an active mode, a signal for selecting a way is set to an “H” level and then reset to an “L” level at each cycle while the corresponding upper address is designated. When data refresh is to be carried out in a standby mode, the signal for selecting the way is maintained at an “H” level and is not reset to an “L” level while the corresponding upper address is designated. This can reduce the standby current.

Abstract: In order to reduce degradation of the processing performance of the data processor due to use of a part of the main memory as a display frame buffer, when an access request to the memory 200 is generated from the CPU 310, the memory controller 400 holds it once, requests the display controller 560 to stop the access to the memory 200 which is in execution, when data to the access executed already is transferred from the memory 200, holds it, and transfers the access request from the CPU bus 310 which is held by the memory 200. When the access from the CPU bus 310 ends, the memory controller 400 restarts the access stopped in the display controller 560 and passes the held data to the display controller 560.

Abstract: A nonvolatile memory apparatus including a control circuit, plural terminals having clock, command and other terminals, data and command registers, and plural nonvolatile memory cells. The clock terminal receives a clock signal and the command terminal receives commands including read and program commands. The data register receives from and outputs data to outside. The control circuit reads operation steps from memory used to control the apparatus. The control circuit, responsive to the read command, controls reading data from the memory cells, storing read data to the data register, and outputting read data via the other terminal, not the command terminal, based on the clock signal. The control circuit, responsive to the program command, controls receiving data via the other terminal, not the command terminal, based on the clock signal, storing received data to the data register and writing received data to the memory cells.