Abstract: An IC body is loaded to a case 2 made of thermosetting resin material and sealed with a sealing portion made of thermosetting resin material to be integrated, whereby an IC card is manufactured. The IC body comprises: a wiring substrate formed with an external connection terminal at a back surface thereof; a semiconductor chip loaded over a surface of the wiring substrate and electrically connected to the external connection terminal via a interconnect; and the sealing portion made of thermosetting resin material so as to cover the semiconductor chip and a bonding wire. The sealing portion is formed so that the external connection terminal is exposed. The present invention makes it possible to heighten the strength of IC cards and at the same time, to reduce the manufacturing cost and improve the reliability.

Abstract: A trigger producing circuit provides a trigger signal. A delay circuit receives the trigger signal, and provides a delay signal produced by delaying the trigger signal. A clock counter receives clocks, counts the received clocks for a period from reception of the trigger signal to reception of the delay signal, and provides a result of the counting. A determining circuit stores a relationship between the number of clocks and a latency, and determines the latency corresponding to the result of counting provided from the clock counter. A latency register holds the determined latency. A WAIT control circuit externally provides a WAIT signal based on the latency held in the latency register.

Abstract: The present invention offers the semiconductor device which can solve each problem, such as Fermi level pinning, formation of gate electrode depletion, and a diffusion phenomenon, can adopt a material suitable for each gate electrode of the MOS structure from which threshold voltage differs, and can adjust (control) threshold voltage appropriately by the manufacturing process simplified more and which has a MOS structure. In the semiconductor device which has a MOS structure concerning the present invention, a PMOS transistor has the structure in which the gate insulating film, first metal layer, second metal layer, and polysilicon layer was formed in the order concerned. An NMOS transistor has the structure by which a gate insulating film and polysilicon were formed in the order concerned.

Abstract: Even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is realized. The channel length direction of n channel MISFET where the silicide region of nickel or a nickel alloy was formed on the source and the drain is arranged so that it may become parallel to the crystal orientation <100> of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation <100>, even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.

Abstract: A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer.

Abstract: The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.

Abstract: Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa 4a is formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa 4a is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa 4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.

Abstract: In a phase locked loop circuit, a phase comparator compares the phase of input clock and that of output clock, and provides a control signal as the comparison result. A charge pump circuit includes a clamp circuit, and based on the control signal, provides a control voltage of which lower limit is the reference voltage level. A voltage controlled oscillator receives the control voltage and a second control voltage from the outside and generates output clock having a frequency in accordance with the control voltages. Each delay stage of a delay section is configured with a plurality of delay units identical to that in the voltage controlled oscillator. The delay stage controls the delay time in response to the supply of the control voltage and the second control voltage.

Abstract: A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.

Abstract: An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched between the first insulating films and located in a middle portion below the floating gate electrode. The first insulating film and the second insulating film are formed in separate steps, and the first insulating film is thicker than the second insulating film. With this structure, when an insulating film is provided between the floating gate electrode and a silicon substrate to have a thickness more increased at its end portion than at its middle portion, the thickness can be increased more freely and a degree of the increase can be controlled more readily.

Abstract: A plurality of first sub-bit lines are each connected to a common source line via a corresponding first sub-bit line reset transistor with NMOS structure, and a plurality of second sub-bit lines are each connected to the common source line via a corresponding second sub-bit line reset transistor with NMOS structure. The plurality of first and second sub-bit line reset transistors have their respective gates receiving a sub-bit line reset signal. This sub-bit line reset signal becomes “H” for a predetermined period of time after read data is obtained during a read period.

Abstract: A mechanism of making a low standby current caused by power off compatible with a fast return operation from a standby caused by an interrupt is realized. An information processing device has a first area that includes a central processing unit and peripheral circuit modules, a second area having information holding circuits for holding values of registers contained in the peripheral circuit modules, and a first power switch for controlling supply of a current to the first area. When the information processing device operates in a first mode, an operating current is supplied to the first area and the second area. When the information processing device operates in a second mode, the first power switch is controlled so that the supply of the current to the first area can be shut off, and the supply of the current to the second area is continued.

Abstract: A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.

Abstract: The present invention is directed to assure an initial state of a circuit until a power supply voltage is stabilized at the time of power-on and to prevent an output circuit of an external input/output buffer circuit from performing erroneous operation at the time of setting a predetermined register value or the like to an initial value. A power supply detecting circuit outputs a power supply voltage detection signal indicating that a power supply voltage supplied from the outside enters a predetermined state. A power on reset circuit receives the power supply voltage detection signal, instructs an initial setting operation of the internal circuit at a predetermined timing and, in response to completion of the initial setting operation of the internal circuit, changes an external input/output buffer circuit from a high impedance state to an operable state. Consequently, when the external input/output buffer circuit becomes operable, the initial setting of the internal circuit has already completed.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: In a memory card with a newly-added module for performing data communication, data communication is stably performed without receiving a noise effect. As an embodiment of the present invention, a memory card 100 has a thin-plate-shaped holding member 20, a memory section 24 provided as buried in the holding member 20, plural first connection pieces 2-10 connected to the memory section 24, a data communication section 26 provided as buried in the holding member 20, and two connection pieces 11, 12 connected to the data communication section 26. The two second connection pieces 11, 12 are disposed at the end of a row part R1 on which only the plural first connection pieces 2-10 are aligned. One first connection piece 10 positioned at the end of the row part R1 is a ground terminal. That is to say, in the plural first connection pieces 2-10, the first connection piece 10 adjacent to the second connection piece 11 is a ground terminal.

Abstract: Disclosed is a nonvolatile memory with a shortened total write time, capable of stably writing data by making a write current constant while reducing fluctuations in a voltage generated by a booster circuit. In a nonvolatile memory such as a flash memory, data is determined at the time of writing operation. While skipping a bit corresponding to write data having the logic “1” (or logic “0”), writing operation to bits corresponding to write data having the logic “0” (or logic “1) is successively performed.

Abstract: In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.

Abstract: An asynchronous data transmitting apparatus includes data signal transmission lines; two control transmission lines having a minimum delay and maximum delay respectively; a transmitter; and a receiver. The transmitter includes a data transmitting unit that transmits a data signal through the data signal transmission lines, depending on a transmit clock; and control transmitting units that transmit control signals through the control transmission lines, depending on the transmit clock. The receiver includes a receive clock generator that generates a read clock from the control signals; and a data receiving unit that receives the data signal through the data signal transmission line, depending on the read clock.

Abstract: A chip including: a microprocessor; a control unit coupled to the microprocessor; and interface nodes for coupling a synchronous dynamic memory; wherein the control unit generates command information and the interface nodes output the command information to the synchronous dynamic memory in synchronism with a clock signal, wherein the command information includes a mode register set function which sets mode information to a mode register in the synchronous dynamic memory, and wherein the control unit outputs the mode information to address signal input terminals of the synchronous dynamic memory.