Abstract: An aluminum alloy for a sliding component containing 8.0% to 12.0% by mass of Si, 0.8% to 1.1% by mass of Cu, 0.4% to 0.6% by mass of Mg, 0.30% to 0.60% by mass of Mn, 0.01% to 0.03% by mass of Cr, 0.10% to 0.30% by mass of Fe, 0.0005% to 0.0050% by mass of Ca, 0.00005% to 0.03000% by mass of Sr, and balance Al with inevitable impurities, in which a ratio Sr/Ca of a Sr content to a Ca content is in a range of 0.01 to 30, a tensile strength at 25° C. is within a range of 330 MPa to 380 MPa, the aluminum alloy does not contain, per 1182 ?m2, two or more crystallized products containing 1% by mass or more of Cu and having a circle equivalent diameter exceeding 5 ?m, and the aluminum alloy does not contain, per 1182 ?m2, two or more Cr-containing intermetallic compounds having a length of 8 ?m or more.

Abstract: A cured epoxy resin, which is a cured product of an epoxy compound having a mesogenic structure and a curing agent having a molecular chain or a flexible backbone with a molecular weight of 100 or more, the cured epoxy resin having a smectic structure; a cured epoxy resin, which is a cured product of an epoxy compound having a mesogenic structure and a curing agent having a molecular chain or a flexible backbone with a molecular weight of 100 or more, the cured epoxy resin not having a smectic structure; an epoxy resin composition, comprising an epoxy compound having a mesogenic structure and a curing agent having a molecular chain with a molecular weight of 100 or more; and an epoxy resin composition, comprising an epoxy compound having a mesogenic structure and a curing agent having a flexible backbone with a molecular weight of 100 or more.

Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

Abstract: An aluminum alloy forging includes 0.30 mass % or more and 1.0 mass % or less of Cu; 0.63 mass % or more and 1.30 mass % or less of Mg; 0.45 mass % or more and 1.45 mass % or less of Si; the balance being Al and inevitable impurities, wherein the following relations are satisfied, [Mg content]×1.587??4.1×[Cu content]2+7.8×[Cu content]?1.9??(1) [Si content]×2.730??4.1×[Cu content]2+7.8×[Cu content]?1.9??(2) and the ratio of the integrated intensity Q1 of the X-ray diffraction peak of the CuAl2 phase to the integrated intensity Q2 of the X-ray diffraction peak of the (200) plane of the Al phase obtained by the X-ray diffraction method, Q1/Q2, is 2×10?1 or less.

Abstract: Provided are an epoxy resin composition including hexagonal boron nitride particles having an aspect ratio of 2 or more, a liquid crystalline epoxy monomer, and a curing agent, and the epoxy resin composition being capable of forming a resin matrix having a smectic domain by reacting the liquid crystalline epoxy monomer with the curing agent, and a thermally-conductive material precursor, a B-stage sheet, a prepreg, a heat dissipation material, a laminate, a metal substrate, and a printed circuit board, which use the epoxy resin composition.

Abstract: In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [?1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [?1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 m?·cm or less, and a region other than a high nitrogen concentration region called a facet is included.

Abstract: In a SiC substrate according to the present embodiment, a proportion of a first region in which a difference between a maximum value and a minimum value of absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm?1 or less is 70% or more of the total area.

Abstract: A SiC single crystal substrate of an embodiment is a SiC single crystal substrate wherein the main plane of the SiC single crystal substrate has an off angle of 0° to 6° to the (0001) plane in the <11-20> direction and an off angle of 0° to 0.5° to the (0001) plane in the <1-100> direction, and includes non-MP defects wherein when the Si surface is etched in molten KOH at 500° C. for 15 minutes, the non-MP defects that appear by etching are hexagonal and have no core, the area of the observed etch pit of the non-MP defect is more than 10% larger than that of the observed etch pit of the TSD and is less than 110% of that of the observed etch pit of the micropipe (MP), and a transmission X-ray topography image of the non-MP defect is distinguishable from the transmission X-ray topography image of the micropipe (MP), wherein etch pits, which are identified as the non-MP defects, appear in the range of 0.1/cm2 to 50/cm2.

Abstract: A packing material, wherein to a porous organic polymer carrier including 60 to 95 mol % of a repeating unit derived from glycidyl methacrylate and 5 to 40 mol % of a repeating unit derived from a polyfunctional monomer, one end of at least one alkylene group selected from a linear alkylene group, a cycloalkylene group, and a linear alkylcycloalkylene group, having 4 to 9 carbon atoms is bonded by a glycidyl group derived from glycidyl methacrylate, and an other end of the alkylene group is bonded to any one end of a polyol via an ether bond.

Abstract: A SiC single crystal substrate of an embodiment has a diameter being 199 mm or more, wherein the density of threading dislocations per area of 0.25 mm2 arbitrarily selected in the main surface of the SiC single crystal substrate is 5×104/cm2 or less, and the threading dislocations include a threading edge dislocation.

Abstract: In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [?1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm?1 or less.

Abstract: An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

Abstract: An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205 mm, a thickness in the range of 300 ?m to 650 ?m, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 2×1018/cm3 or more and 6×1019/cm3 or less at least five arbitrarily selected points in the plane within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.

Abstract: An 8-inch SiC single crystal substrate of an embodiment has a diameter in a range of 195 mm to 205 mm, a thickness in a range of 300 ?m to 650 ?m, a SORT of 50 ?m or less, and an in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 ?m or less.

Abstract: An etching gas and an etching method capable of selectively etching an etching object containing silicon as compared with a non-etching object. The etching gas contains fluorobutene represented by a general formula C4HxFy, in which x is 1 or more and 7 or less, y is 1 or more and 7 or less, and x+y is 8. The etching gas contains hydrogen fluoride as an impurity and the concentration of hydrogen fluoride is 100 ppm by mass or less. The etching method includes an etching step of bringing the etching gas into contact with a member to be etched (12) having an etching object which is an object to be etched by the etching gas and a non-etching object which is not an object to be etched by the etching gas, and selectively etching the etching object as compared with the non-etching object. The etching object contains silicon.

Abstract: In a SiC substrate of the present invention, in a case where a point 10 mm inside from an outer peripheral edge in a [11-20] direction from a center is defined as a first outer peripheral point and any point within a circle having a diameter of 10 mm from the center is defined as a first center point, the tensile stress of the first outer peripheral point in a <1-100> direction, which is a circumferential direction of the first outer peripheral point, is larger than the tensile stress of the first center point in the <1-100> direction, which is the same direction as the circumferential direction of the first outer peripheral point.

Abstract: A method for removing an oxygen molecule from a carbon-monoxide-containing gas which includes removing water from a platinum catalyst by heat treating the platinum catalyst in a heat treatment vessel until the concentration of water contained in inert gas discharged from the heat treatment vessel after being supplied to the heat treatment vessel and used in the heat treatment is less than 1000 vol ppm; and bringing the carbon-monoxide-containing gas into contact with the platinum catalyst to remove an oxygen molecule from the carbon-monoxide-containing gas. Also disclosed is a step of removing carbon dioxide from gas after removing an oxygen molecule using a carbon dioxide adsorbent, as well as a pressure swing adsorption step of recovering carbon monoxide from gas after removing carbon dioxide by a pressure swing adsorption method, to obtain purified carbon monoxide having a purity of 99.95 vol % or more.

Abstract: An etching gas and an etching method capable of selectively etching an etching object containing silicon as compared with a non-etching object. The etching gas contains fluorobutene represented by a general formula C4HxFy, in which x is 1 or more and 7 or less, y is 1 or more and 7 or less, and x+y is 8. The etching gas contains or does not contain at least one of copper, zinc, manganese, cobalt, and silicon as metal impurities, and the sum of the concentrations of copper, zinc, manganese, cobalt, and silicon when contained is 5000 ppb by mass or less. The etching method includes an etching step of bringing the etching gas into contact with a member to be etched (12) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching object contains silicon.

Abstract: The SiC substrate has a warpage factor F of 300 ?m or less, which is obtained from the thickness, the diameter, and a stress at a first outer circumferential end 10 mm inward from an outer circumferential end in the [11-20] direction from a center thereof.

Abstract: There are provided an etching gas and an etching method capable of selectively etching an etching object containing silicon as compared with a non-etching object. The etching gas contains fluorobutene represented by a general formula C4HxFy, in which x is 1 or more and 7 or less, y is 1 or more and 7 or less, and x+y is 8. The etching gas contains or does not contain at least one of alkali metals and alkaline earth metals as metal impurities, and the sum of the concentrations of alkali metals and alkaline earth metals when contained is 5000 ppb by mass or less. The etching method includes an etching step of bringing the etching gas into contact with a member to be etched (12) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching object contains silicon.