Abstract: A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation.

Abstract: A multi-stage radio frequency (RF) power amplifier includes a high-power amplifier path and a low-power amplifier path. The low-power amplifier path includes gain synchronization circuitry in order to synchronize the gain response of the high-power amplifier path and the low-power amplifier path. By synchronizing the gain response of the high-power amplifier path and the low-power amplifier path, the gain linearity of the multi-stage RF amplifier is improved.

Abstract: A lateral semiconductor device having a vertical region for providing a protective avalanche breakdown (PAB) is disclosed. The lateral semiconductor device has a lateral structure that includes a conductive substrate, semi-insulating layer(s) disposed on the conductive substrate, device layer(s) disposed on the semi-insulating layer(s), along with a source electrode and a drain electrode disposed on the device layer(s). The vertical region is separated from the source electrode by a lateral region wherein the vertical region has a relatively lower breakdown voltage level than a relatively higher breakdown voltage level of the lateral region for providing the PAB within the vertical region to prevent a potentially damaging breakdown of the lateral region. The vertical region is structured to be more rugged than the lateral region and thus will not be damaged by a PAB event.

Abstract: A wide bandwidth radio frequency amplifier is disclosed. The wide bandwidth radio frequency amplifier has a first signal path having a first input and a first output along with a first dual gate field effect transistor having a first-first gate coupled to the first input and a first drain coupled to the first output. The wide bandwidth radio frequency amplifier also includes a second signal path having a second input and a second output and a second dual gate field effect transistor having a second-first gate coupled to the second input and a second drain coupled to the second output.

Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

Abstract: Radio frequency (RF) front end circuitry includes a notch diplexer. The notch diplexer includes a high pass filter coupled between a high band port and an antenna port, and a low pass notch filter coupled between a low band port and the antenna port. The high pass filter is adapted to receive a high band receive signal having a high band carrier frequency at the antenna port, and pass the high band receive signal to the high band port. The low pass notch filter is adapted to receive a low band transmit signal having a low band carrier frequency at the low band port, and attenuate distortion in the low band transmit signal about a notch stop band before passing the low band transmit signal to the antenna port. According to one embodiment, the notch stop band includes the high band carrier frequency.

Abstract: This disclosure relates to radio frequency (RF) front-end circuitry. In one embodiment, the RF front-end circuitry is arranged to provide antenna switching functionality for a Worldphone or a World tablet. The RF front-end circuitry may include front-end switching circuitry, a multiple throw microelectromechanical switch (MTMEMS), a first antenna port, a second antenna port, and a third antenna port. The front-end switching circuitry of the RF front-end circuitry is configured to selectively couple one or more RF ports to either the first antenna port or the second antenna port. The MTMEMS is configured to selectively couple a pole port coupled to the third antenna port to any one of a set of throw ports, which may be RF ports or may be coupled to RF ports. As such, the RF front-end circuitry is capable of providing antenna switching functionality between three antennas for a Worldphone or World tablet.

Abstract: A tunable receiver system uses programmable notch filters to identify available channel pairs for transmitting and receiving data via a femtocell base station. In addition, one of the programmable notch filters may be used to suppress infiltration of the transmit path signal into the receiver path of the receiver device. The other programmable notch filter may be used to suppress a blocker signal identified by the receiver device.

Abstract: An adaptive antenna neutralization network (AANN) for neutralizing coupling between a first antenna and a second antenna of a mobile terminal is disclosed. The AANN includes an array of reactive branches. Each of the reactive branches includes a reactive element and an electrically controlled switch with a control input for selectively coupling the reactive element between the first antenna and the second antenna. Also included is a switch driver having an output coupled to the control input of each electrically controlled switch, and a controller having an output for sending control signals to the switch driver to turn on or off individual ones of the electrically controlled switches in response to conditions that indicate a coupling state between the first antenna and the second antenna.

Abstract: The present disclosure relates to power supply circuitry that has wide bandwidth and achieves high efficiency by using at least one energy storage element for efficient power transfer between two power supply circuits and to an amplitude modulated load. Specifically, the power supply circuitry may include a first power supply circuit, which may be a switching power supply circuit, a second power supply circuit, which may be a linear power supply circuit and may include the energy storage element, and control circuitry to facilitate efficient power transfer. The control circuitry may select one of multiple operating modes, which may include a first operating mode, during which the first power supply circuit may provide power to the energy storage element, and a second operating mode, during which the second power supply circuit may provide power to the amplitude modulated load from the energy storage element.

Abstract: A switch mode power supply converter, a parallel amplifier, and a parallel amplifier output impedance compensation circuit are disclosed. The switch mode power supply converter provides a switching voltage and generates an estimated switching voltage output, which is indicative of the switching voltage. The parallel amplifier generates a power amplifier supply voltage at a power amplifier supply output based on a compensated VRAMP signal. The parallel amplifier output impedance compensation circuit provides the compensated VRAMP signal based on a combination of a VRAMP signal and a high frequency ripple compensation signal. The high frequency ripple compensation signal is based on a difference between the VRAMP signal and the estimated switching voltage output.

Abstract: A digital step attenuator with thermometer encoded attenuator stages is disclosed. In one embodiment, Embodiments disclosed in the detailed description may include a digital step attenuator, programmable thermometer encoded attenuator stages, the digital step attenuator may include a cascade of programmable thermometer encoded attenuator stages. Each stage may be provided by a programmable impedance array including a plurality of impedances arranged in parallel. The impedance of each of the plurality of each stage may change monotonically by switchably inserting or removing one of the plurality of impedances in the arrays. The control circuit may govern the attenuation level of each of the thermometer encoded accumulator stages as a function of a thermometric codeword, which controls the switches in the arrays.

Abstract: Methods for fabricating a field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends are disclosed. The methods provide field effect transistors that each include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. At least one method includes etching at least one gate channel into the passivation layer with a predetermined slope that reduces electric fields at a gate edge. Other methods include steps for fabricating a sloped gate foot, a round end, and/or a chamfered end to further improve high voltage operation.

Abstract: A front end radio architecture is configured to provide a split band frequency arrangement that includes co-banding. The disclosed split band frequency arrangement combines a medium bandwidth filter with a small bandwidth filter to provide enough bandwidth to pass a relatively large communication band. The medium bandwidth filter has a bandwidth that is large enough to support co-banding of smaller communication bands, while also having a narrow enough bandwidth to realize a relatively steep roll-off that ensures coexistence with adjacent bands that are not co-banded. The bandwidths of the medium bandwidth filter and the small bandwidth filter overlap in bandwidth by an amount that is at least as large as the highest bandwidth signal expected to be received or transmitted. The split band frequency arrangement reduces the number of filters needed in the front end radio architecture by repurposing the small bandwidth filter, and by co-banding the smaller communication bands.

Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

Abstract: This disclosure includes embodiments of a tunable hybrid coupler. The tunable hybrid coupler includes a first inductive element having a first inductance, a second inductive element having a second inductance and mutually coupled to the first inductive element, a first variable capacitive element having a first variable capacitance, and a second variable capacitance having a second variable capacitance. The first variable capacitive element is coupled between a first port and a second port. The second variable capacitive element is coupled between a third port and a fourth port. The first inductive element is coupled from the first port to the third port, while the second inductive element is coupled from the second port to the fourth port. Accordingly, the tunable hybrid coupler may form an impedance matching network that is tunable to different radio frequency (RF) communication bands. The tunable hybrid coupler can be used in a tunable RF duplexer.

Abstract: A digital log gain to digital linear gain multiplier is disclosed. The digital log gain to digital linear gain multiplier includes a log gain splitter adapted to split a log gain input into an integer log part and a remainder log part. A log scale-to-linear scale converter is adapted to output a linear gain value in response to the integer log part and the remainder log part. A gain multiply circuit is adapted to multiply a digital signal by the linear gain value to output a gain-enhanced digital signal.

Abstract: A communication device is disclosed that efficiently manages power. In one embodiment, this communication device includes a first (main) transmitter including a first low band amplifier and a first high band amplifier; a second (MIMO) transmitter including a second low band amplifier and a second high band amplifier; a first power manager in communication with the first low band amplifier and with the second high band amplifier; a second power manager in communication with the first high band amplifier and with the second low band amplifier; and a control system in communication with the first transmitter, the second transmitter, the first power manager, and the second power manager.

Abstract: A first transmit path, a second transmit path, and a third transmit path are disclosed. The first transmit path includes a first radio frequency (RF) power amplifier (PA) and alpha switching circuitry, which is coupled to an output from the first RF PA. The second transmit path includes a second RF PA and beta switching circuitry, which is coupled to an output from the second RF PA. The third transmit path includes a third RF PA.

Abstract: An efficient power transfer power amplifier (PA) architecture is disclosed that includes a first PA, a first impedance transformation network (ITN) coupled to the first PA, a second PA, and a second ITN coupled to the second PA. A switching network having a plurality of load outputs along with a first switch input coupled to a first impedance output of the first ITN and a second switch input coupled to a second impedance output of the first ITN, a third switch input coupled to a third impedance output of the second ITN, and a fourth switch input coupled to a fourth impedance output of the second ITN. A control system is adapted to control the switching network to switch signals at the first, second, third, and fourth switch inputs such that select ones of the signals travel paths having matching impedances to loads coupled to the plurality of load outputs.