Abstract: A semiconductor device includes a chip having a main surface, and a gate structure of a trench electrode type formed in the main surface, wherein the gate structure includes a trench formed in the main surface, an insulating film including a first film portion that covers a wall surface of an inner portion of the trench, and a second film portion that covers a wall surface of an end portion of the trench and has a thickness greater than a thickness of the first film portion, and an embedded electrode embedded in the trench across the insulating film.

Abstract: A semiconductor device, including: a chip having first and second main surfaces on two different sides; a first semiconductor region of a first conductivity type formed in a region of the chip on the first main surface side; a second semiconductor region of a second conductivity type formed in a region of the chip on the second main surface side with respect to the first semiconductor region; and groove structures formed in the first main surface at an interval in a first direction in a plan view, extending in a second direction in the plan view, and penetrating through the first semiconductor region in a cross-sectional view. Each groove structure includes a groove, an insulating film covering a wall surface of the groove, and a control electrode embedded in the groove with the insulating film interposed therebetween and configured to control a channel in the second semiconductor region.

Abstract: ???A semiconductor device, including: a semiconductor chip having a main surface; a region separation structure demarcating a device region in the main surface; and an n-system main transistor including n (n?2) system transistors that are each formed in the main surface in the device region so as to be individually controlled. The region separation structure includes a trench separation structure including a separation trench that is formed in the main surface, and a separation electrode that is embedded in the separation trench and has a separation electrode surface exposed from the separation trench. Each system transistor includes a trench structure including a trench formed in the main surface, and an embedded electrode embedded in the trench and having an embedded electrode surface positioned on a bottom wall side of the trench with respect to a depth position of the electrode surface, in regard to a depth direction of the trench.

Abstract: A semiconductor light-emitting device includes: a substrate; multiple semiconductor light-emitting elements disposed on the substrate; and multiple drive circuits disposed on the substrate each being configured to drive one or more of the semiconductor light-emitting elements. Each of the semiconductor light-emitting elements is disposed on a main surface of the substrate, and includes a light output element configured to output light in a direction intersecting the main surface. Each of the drive circuits includes a switching element configured to control one or more of the semiconductor light-emitting elements, and a capacitor configured to supply electric current to the one or more of the semiconductor light-emitting elements.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type including an SiC monocrystal and having a main surface, a gate structure of a trench type formed in the main surface, and a well region of a second conductivity type formed in a region below the gate structure in the semiconductor layer and extending along an axis channel of the SiC monocrystal.

Abstract: Provided is an amplifier circuit including an inverting input terminal configured to receive a first voltage, an output terminal, and a class A amplifier circuit configured to generate, at the output terminal, an output voltage that changes in reverse polarity with respect to the first voltage, in which a bias current of an output stage of the class A amplifier circuit changes according to the first voltage.

Abstract: A semiconductor device includes: a semiconductor substrate; a semiconductor layer that is located over the semiconductor substrate and includes a drain region, a source region, a drift region, and a channel region; an insulating film that is in contact with the semiconductor layer and is located over the channel region; a first interlayer insulating film that covers the insulating film; and a field plate that is located over the first interlayer insulating film, overlaps the drift region, and is electrically connected to the drain region.

Abstract: A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate.

Abstract: The present disclosure provides a motor drive device. The motor drive device includes a terminal, a logic unit, a drive unit and a determination unit. The terminal is configured to receive a Hall signal output from a Hall sensor. The logic unit is configured to generate a control signal based on the Hall signal. The drive unit is configured to generate a driving signal based on the control signal. The determination unit is configured to determine a level of a voltage applied to the terminal. The logic unit is configured to switch a function setting based on a determination result of the determination unit.

Abstract: A first transistor and a second transistor disposed on the lower-potential side of the first transistor are connected in series with each other. Based on a level change in a drive control signal, the first transistor is turned on at the lapse of a first delay time and the second transistor is turned off at the lapse of a second delay time. Based on the gate signals to the first and second transistors, the turn-on timing of the first transistor and the turn-off timing of the second transistor are sensed. Based on the difference between those timings, at least one of the first and second delay times is changed to reduce a dead time.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a substrate-side insulating layer disposed on the semiconductor substrate. The substrate-side insulating layer includes: a first oxide film; a second oxide film, disposed on the first oxide film and separated from the first oxide film; and a first nitride insulating layer and a second nitride insulating layer disposed between the first oxide film and the second oxide film. The second nitride insulating layer has a film density higher than a film density of the first nitride insulating layer.

Abstract: A semiconductor device includes a semiconductor layer that has a principal surface, a first conductive layer that is formed on the principal surface of the semiconductor layer, a first insulating portion that is formed on the principal surface of the semiconductor layer so as to cover the first conductive layer and that includes a first insulating layer of at least three or more layers, a second insulating portion that is formed on the first insulating portion, that has a dielectric constant differing from a dielectric constant of the first insulating layer, and that includes a second insulating layer not included in the first insulating portion, and a second conductive layer that is formed on the second insulating portion, that faces the first conductive layer through the first insulating portion and the second insulating portion, and that is connected to a potential differing from a potential of the first conductive layer.

Abstract: This semiconductor device comprises a peripheral region surrounding a cell region, a gate electrode disposed in the peripheral region, and an emitter electrode. The emitter electrode includes a cell electrode portion, a peripheral electrode portion formed at a distance from the cell electrode portion in the peripheral region, and a connecting portion connecting the cell electrode portion and the peripheral electrode portion. The peripheral region includes a well region formed to surround the cell region, an insulating film and an intermediate insulating film that cover the well region, and a gate finger embedded in the insulating films. The connecting portion is formed across the gate finger on the intermediate insulating film. The peripheral electrode portion is electrically connected to the well region.

Abstract: A semiconductor device includes a chip having a first principal surface, a plurality of first conductive structures formed of a first conductive material on the first principal surface, an insulating layer covering the first conductive structures, a pad formed on the insulating layer, a second conductive structure formed of a metal wiring, and a peripheral wiring structure. The second conductive structure includes a first portion extending toward a first end surface of the chip and a second portion extending along the first end surface and terminating at a corner of the chip. The peripheral wiring structure extends from the terminal portion along a second end surface intersecting the first end surface and is electrically connected to at least one of the first conductive structures. The semiconductor device provides electrical connection between the first conductive structures and the corner terminal portion of the chip.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a main surface, a body region of a second conductivity type formed in a surface layer portion of the main surface, a gate structure of a trench type formed in the main surface so as to penetrate through the body region; and a body high concentration region formed at a bottom portion of the body region and having an impurity concentration higher than an impurity concentration of the body region.

Abstract: This semiconductor device includes a first switching element, a second switching element, and a resin layer that seals each switching element. The semiconductor device includes: a power supply electrode which is formed on the surface of the resin layer and of which at least a part overlaps the first switching element when viewed from a z direction; and a power supply via conductor that electrically connects the first switching element and the power supply electrode through the resin layer in the z direction.

Abstract: A semiconductor device includes a semiconductor layer that has a main surface, a main surface electrode that is arranged at the main surface, an insulating film that partially covers the main surface electrode such as to expose a portion of the main surface electrode, a mold layer that covers the insulating film such as to expose the main surface electrode, and a pad electrode that is arranged on the main surface electrode such as to be electrically connected to the main surface electrode.

Abstract: A transmitting device transmits a transmission signal to a receiving device via a transmission line having a terminal resistance and the receiving device connected to one end thereof. The transmitting device includes: an impedance matching resistance having one end thereof connected to the other end of the transmission line and the other end thereof connected to the transmitting device; a transmission circuit that generates a transmission signal and outputs the generated transmission signal to the other end of the impedance matching resistance; and a terminal resistance abnormality detection circuit that outputs an abnormality detection signal indicating that the terminal resistance is not normally connected to the transmission line when a voltage difference between a voltage at one end of the impedance matching resistance and a voltage at the other end of the impedance matching resistance becomes less than a predetermined threshold voltage.

Abstract: A driving device is configured to drive a switching element. The driving device includes a pull-down circuit connected to the control terminal of the switching element. The pull-down circuit is configured to keep a first pull-down current, which flows through the pull-down circuit before the driving device starts up, higher than a second pull-down current, which flows through the pull-down circuit after the driving device starts up.

Abstract: Provided is a photosensor that measures a state of a detection subject, the photosensor including a light source that emits irradiation light in a wavelength band including a specific peak wavelength to the detection subject, a band-pass filter that allows the irradiation light reflected by the detection subject to be selectively transmitted through the band-pass filter, a light receiver that receives the irradiation light transmitted through the band-pass filter, and a measuring device that measures the state of the detection subject by using the light received by the light receiver. The light source has a temperature characteristic in which the specific wavelength peak of the emitted irradiation light shifts by a first wavelength shift amount depending on an environmental temperature. The band-pass filter has a temperature characteristic in which the specific wavelength peak of the emitted irradiation light shifts by a second wavelength shift amount depending on the environmental temperature.