Abstract: A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.
Abstract: Provided is a switching control circuit used for a switching power supply device for generating an output voltage from an input voltage. The switching control circuit includes an intermittent operation mode for repeating an active period in which an output switching element of the switching power supply device is switched and an inactive period in which the output switching element is not switched. The switching control circuit is provided with a modulation unit for modulating a pulse frequency of a switching control signal during the active period, and performs control of switching of the output switching element by the switching control signal during the active period.
Abstract: A package structure includes a metal member and a resin member. The metal member has an obverse surface facing one side in a first direction. The resin member is disposed in contact with at least a portion of the obverse surface. The obverse surface has a roughened area. The roughened area includes a plurality of first trenches recessed from the obverse surface, each of the first trenches having a surface with a greater roughness than the obverse surface. The plurality of first trenches extend in a second direction perpendicular to the first direction and are next to each other in a third direction perpendicular to the first direction and the second direction. The plurality of first trenches are filled up with the resin member.
Abstract: A semiconductor device includes a semiconductor layer, a source region and a drain region that are formed in the semiconductor layer and at an interval in a first direction, a gate insulating film that is formed such as to cover a channel region between the source region and the drain region, and a gate electrode that is formed on the gate insulating film and opposes the channel region across the gate insulating film. The gate insulating film has a major portion on which the gate electrode is formed and extension portions projecting outward from each of both sides of the major portion in a second direction orthogonal to the first direction and leak current suppressing electrodes are formed on the extension portions.
Abstract: A non-isolated buck converter generates an output voltage by stepping down an input voltage obtained by subjecting an alternating-current voltage to full-wave rectification and smoothing, by using a step-down circuit including a switching element, an inductor, and a freewheeling diode. The switching element is disposed between a first terminal and a second terminal. A semiconductor device in charge of switching control operates with a potential at the second terminal as a reference. A control circuit provided in the semiconductor device includes a protecting circuit capable of referring to an evaluation voltage corresponding to a voltage between the first terminal and the second terminal at a sampling timing at which a predetermined period of time has passed from turning off of the switching element, and performing a protecting operation that fixes the switching element to an off state on the basis of the evaluation voltage.
Abstract: A voltage monitoring circuit monitors a magnitude relationship between a monitoring target voltage and a determination voltage and is capable of suppressing the influence of an offset of a reference voltage upon the determination voltage and setting the determination voltage as desired. The voltage monitoring circuit includes: an input terminal, applied with a monitoring target voltage or a divided voltage of the monitoring target voltage; a reference voltage generating circuit, generating a first reference voltage; a linear power circuit, converting the first reference voltage to a second reference voltage; a feedback resistor, generating a divided voltage of the second reference voltage, and negatively feeding back the divided voltage of the second reference voltage to the linear power circuit; and a comparing portion, comparing the second reference voltage with the monitoring target voltage or the divided voltage of the monitoring target voltage applied to the input terminal.
Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
Abstract: This power supply IC is a semiconductor integrated circuit device serving as a main part for controlling a switching power supply and is formed by integrating a feedback resistor and an output feedback control unit on a single semiconductor substrate, said feedback resistor generating a feedback voltage by dividing the output voltage of the switching power supply (or the induced voltage appearing across an auxiliary winding provided on the primary side of a transformer included in an insulation-type switching power supply), said output feedback control unit performing output feedback control of the switching power supply in accordance with the feedback voltage. The feedback resistor is a polysilicon resistor having a withstand voltage of 100 V or more. A high-voltage region having higher withstand voltage in the substrate thickness direction than the other region is formed in the semiconductor substrate, and the feedback resistor is formed on the high-voltage region.
Abstract: A switch driving device includes a gate driver, a bootstrap circuit, a current limiting portion, and a current control portion. The gate driver drives an N-type semiconductor switch element. The bootstrap circuit includes a boot capacitor and a boot diode and applies a voltage to the gate driver. The current limiting portion limits a current to be supplied to the boot capacitor. The current control portion controls operations of the current limiting portion. The current limiting portion is provided on a path that electrically connects the boot capacitor and the boot diode to each other.
Abstract: A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.
Abstract: A gate drive circuit in a switching circuit including a switching terminal connected to a node that is connected to a high-side transistor and a low-side transistor, and connected to an end of a boot-strap capacitor, a bootstrap terminal connected to another end of the bootstrap capacitor, a high-side driver having an output terminal connected to a gate of the high-side transistor, an upper power supply node connected to the bootstrap terminal, and a lower power supply node connected to the switching terminal, a low-side driver having an output terminal connected to a gate of the low-side transistor, a rectifying device for applying a constant voltage to the bootstrap terminal, and a dead time controller for controlling a length of a dead time during which the high-side transistor and the low-side transistor are simultaneously turned off, based on a potential difference between the bootstrap terminal and the switching terminal.
Abstract: A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.
Abstract: This light-emitting element drive control device (100) comprises: a drive logic unit (113) which performs a drive control of a switch output stage (N1, D1, L1) for dropping an input voltage (VIN) to an output voltage (VOUT) and supplying a light-emitting element therewith; a charge-pump power supply unit (a) which generates a step-up voltage (CP) higher than the input voltage (VIN); and a current detecting comparator (114) which receives a supply of the step-up voltage (CP) and the output voltage (VOUT) as power supply voltages, and generates control signals (SET, RST) for the drive logic unit (113) by directly comparing a current detection signal (Vsns) corresponding to an inductor current (IL) of the switch output stage with a peak detection value (Vsns_pk) and a bottom detection value (Vsns_bt).
Abstract: A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×1022 cm?3 or more, a SiO2 layer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiO2 layer and in which a carbon density gradually decreases toward the non-connection surface of the SiO2 layer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiO2 layer and that has a carbon density of 1.0×1019 cm?3 or less.
Abstract: A semiconductor device includes, for example, an external terminal, an output element, a detecting element configured to detect occurrence of a negative voltage at the external terminal, and an off-circuit configured to forcibly turn off the output element when the detecting element detects occurrence of the negative voltage.
Abstract: The semiconductor device of the present invention includes a semiconductor substrate, a switching element which is defined on the semiconductor substrate, and a temperature sense element which is provided on the surface of the semiconductor substrate independently from the switching element and characterized by being dependent on a temperature.
Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.
Abstract: A light emitting load driving device includes a first constant current source structured to be serially connected to a first light emitting load group; a second constant current source structured to be serially connected to a second light emitting load group; a first load connection terminal structured to be connected to the first light emitting load group; a second load connection terminal structured to be connected to the second light emitting load group; and a control circuit structured to be supplied a first voltage applied to the first load connection terminal, a second voltage applied to the second load connection terminal, and a reference voltage applied to the control circuit, wherein the control circuit is structured to select a minimum voltage between the first voltage and the second voltage, and the control circuit is structured to equalize the minimum voltage and the reference voltage.