Abstract: A compound having formula (I) wherein R1 and R2 independently represent C1-C6 alkyl; R3 is C1-C6 alkyl; R4 is C1-C18 alkyl or C4-C18 heteroalkyl; m is zero, one, two or three; n is one, two or three; and j, k, p, q, r and s independently are zero, one or two; provided that at least one of j, k, p, q, r and s is not zero.

Abstract: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.

Abstract: The present invention is directed to a semiconductor device including a semiconductor substrate, a through hole penetrating the semiconductor substrate, a base film covering the through hole, a conductive layer disposed on the base film, an insulating film formed on the side wall of the through hole, and a conductive material embedded in the through hole via the insulating film, in which the base film has a stepped portion formed by an opening pattern that selectively exposes the conductive layer therethrough into the through hole, and in which the conductive material is connected electrically to the conductive layer through the opening pattern.

Abstract: New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.

Abstract: A nitride semiconductor element includes a Si substrate; a buffer layer including (a) an AlN layer formed on a primary surface of the Si substrate; and (b) an AlGaN deposit layer formed by laminating multiple AlGaN layers on the AlN layer and having a total thickness ranging from 100 nm to 500 nm; a GaN electron transfer layer formed on the AlGaN deposit layer and having a thickness ranging from 500 nm to 2000 nm provided that the GaN electron transfer layer is thicker than the AlGaN deposit layer; and an AlGaN electron supply layer formed on the GaN electron transfer layer, wherein the AlGaN deposit layer includes an AlGaN layer that is provided closer to the AlN layer and has an Al component that ranges from about 40% to about 60%, and a reference AlGaN layer that has an Al component (%) that is lower than that of the AlGaN layer.

Abstract: A thermal printhead includes a substrate, a resistor layer formed on the substrate, an electrode layer formed on the substrate and electrically connected to the resistor layer, and an insulating layer. The electrode layer includes a first electrically conductive portion and a second electrically conductive portion spaced apart from each other. The resistor layer includes a heater portion that bridges the first electrically conductive portion and the second electrically conductive portion as viewed in the thickness direction of the substrate. The insulating layer includes a portion positioned between the electrode layer and the heater portion. This arrangement reduces formation of a eutectic region between the heater portion and the electrode layer.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: Acid generator compounds are provided that comprise an oxo-1,3-dioxolane moiety and/or an oxo-1,3-dioxane moiety. The acid generators are particularly useful as a photoresist composition component.

Abstract: A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.

Abstract: A salt-splitting liquid (SSL) and a process that uses the SSL to “split” (alkyl)ammonium 3-hydroxypropionate salts into ammonia (or amines) and 3-hydroxypropionic acid (3-HP) that minimizes increases in viscosity and condensation reactions of the 3-HP. Converting (alkyl)ammonium 3-hydroxypropionate in an aqueous mixture to 3-HP includes admixing a polar aprotic organic solvent and an azeotroping solvent with the aqueous mixture. The azeotroping solvent forms an azeotrope mixture with water of the aqueous mixture. The SSL is heated to convert the (alkyl)ammonium 3-hydroxypropionate to 3-HP and ammonia, where heating produces a vapor phase containing at least water, ammonia and the azeotroping solvent. At least a portion of the water and the ammonia is removed from the vapor phase during the heating, and at least a portion of the azeotroping solvent is returned from the vapor phase back to SSL to maintain the azeotrope mixture with the water.

Abstract: A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer.

Abstract: The present invention relates to a method for disinfection involving an antimicrobial composition. It particularly relates to an antimicrobial method for personal cleaning, oral care or hard surface cleaning applications. It was found that compositions comprising thymol, acyclic terpene alcohols and a carrier provide synergistic antimicrobial action in a method for disinfection. In a preferred aspect the composition also comprises 1 to 80%-wt of one or more surfactants.

Abstract: The object is to provide a thermal print head capable of improving printing quality on a medium. The Solution is to provide a base member 11 including a recess 113a, a heat storage region 2 formed in the recess 113a, a resistor layer 4 formed on the base member 11, and an electrode layer 3 formed on the base member 11 and electrically connected to the resistor layer 4. The resistor layer 4 includes a heating portion 41 spanned between two portions of the electrode layer 3 spaced from each other as viewed in a thickness direction Z of the base member 11. The heating portion 41 is located so as to overlap the recess 113a as viewed in the thickness direction Z. The base member 11 is made of a material having a thermal conductivity of 100 to 300 W/(m·K).

Abstract: A touch-panel input device as disclosed in the specification comprises a touch panel and an input controller capable of switching between a right-hand two-point touch input sensing mode suitable for the placement of right fingers and a left-hand two-point touch input sensing mode suitable for the placement of left fingers, wherein the input controller senses two-point touches on the touch panel in either of these input sensing modes.

Abstract: A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01 L<R<10 L (1) (in the expression (1), L represents the straight-line distance between the edge portions opposite to each other in a width direction of the trench).

Abstract: The present invention provides an Alternating Current/Direct Current (AC/DC) converter employing measures not only against residual voltage but also to reduce power consumption. The AC/DC converter receives an Alternating Current (AC) voltage through a concentric plug and converts the AC voltage into a Direct Current (DC) voltage. A discharge path is disposed on a path from a discharge terminal to a ground terminal. A detection circuit compares a wave detection voltage with a predetermined threshold voltage, and enables the discharge path to be turned on when the wave detection voltage is continuously lower than the threshold voltage for a predetermined detection time.

Abstract: The PD device comprises a primary-side controller configured to control an input current of a DC/DC converter disposed between an input and an output, and a secondary-side controller connected with AC coupling to the output, and configured to feed back electric power information of the output to the primary-side controller. The primary-side controller varies an output voltage value and an available output current capacity of the DC/DC converter by controlling the input current on the basis of the electric power information fed back from the secondary-side controller. The primary-side controller can change an overpower detecting set value in accordance with the target equipments connected to the output, thereby executing the power change of the DC/DC converter.

Abstract: A clothing illumination device is switchable between illumination with visible light only and illumination with visible light mixed with ultraviolet light. The clothing illumination device also has an LED light source and an IC tag reader. A clothing illumination system has a first and a second clothing illumination device which are each switchable between illumination with visible light only and illumination with visible light mixed with ultraviolet light, and which operate in a fashion coordinated with each other to perform the switching.

Abstract: An optical sensor is provided according to an embodiment of the present disclosure. The optical sensor includes a first photodiode, a second photodiode having characteristics different from characteristics of the first photodiode, filters configured to block or transmit a specific wavelength range of the light, and an output circuit configured to correct a sensitivity deviation, which may be caused when one of the filters is used for the first photodiode, based on a sensitivity deviation, which may be caused when the other filter of the same kind as the one filter is used for the second photodiode, and output only the specific wavelength range of the light.

Abstract: A non-contact power supply transmitter system 100 transmitting an electric power from a transmitting device (TX) 200 to a receiving device (RX) 300 with a non-contact power supply transmitter method, the TX 200 including: a transmitting coil 202; a driver 204 causing the transmitting coil to generate a power signal of the electromagnetic field; and an FSK modulation unit 240 transmitting an FSK signal Sf through the transmitting coil, the RX 300 including: a receiving coil 302; a rectifier circuit 320 rectifying an electric current induced by the receiving coil; an FSK demodulation unit 340 demodulating the FSK signal received through the receiving coil; and a controller 312 controlling so that a rectifying mode of the rectifier circuit is switched to a diode rectifying mode during the FSK communication. The non-contact power supply transmitter system 100 and the RX 300 can execute a stable FSK communication.