Abstract: The present invention relates an aqueous dispersion of low Tg polymer encapsulating TiO2 particles and a process for preparing the dispersion. The encapsulating polymer is a (meth)acrylate polymer, a styrene-acrylate copolymer, or a vinyl acetate-(meth)acrylate copolymer, or a combination thereof, and the encapsulating polymer further contains units of sodium styrene sulfonate. The present invention provides encapsulated TiO2 particles with low gel that are film-forming at ambient temperatures, especially for coatings applications.

Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: The semiconductor device includes a semiconductor element, a main lead and a resin package. The semiconductor element includes an obverse surface and a reverse surface spaced apart from each other in a thickness direction. The main lead supports the semiconductor element via the reverse surface of the semiconductor element. The resin package covers the entirety of the semiconductor element. The resin package covers the main lead in such a manner that a part of the main lead is exposed from the resin package. The semiconductor element includes a part that does not overlap the main lead as viewed in the thickness direction.

Abstract: A double-integration type A/D converter for performing A/D conversion by integrating an input voltage and a reference voltage is disclosed. The A/D converter includes an integrator configured to integrate the input voltage and the reference voltage; a first switch configured to relay supply of the input voltage to an input terminal of the integrator; a second switch configured to relay supply of the reference voltage to the input terminal; and a control circuit configured to control switching on and off the first switch and the second switch. The control circuit generates a switching signal that switches on and off the first switch and the second switch individually and a switching signal that switches on and off the first switch and the second switch simultaneously. In addition, superimposition of the input voltage and the reference voltage is integrated when the first switch and the second switch are simultaneously switched on.

Abstract: Described are hair fixative compositions comprising an aqueous dispersion comprising an ethylene acrylic acid co-polymer, and optionally a metallocene catalyzed polyolefin.

Abstract: Stable zero-valent metal compositions and methods of making and using these compositions are provided. Such compositions are useful as catalysts for subsequent metallization of non-conductive substrates, and are particularly useful in the manufacture of electronic devices.

Abstract: A motor driving circuit for driving a motor, includes: a detecting circuit configured to detect a detection signal indicative of a current state of the motor; a command value generating unit configured to generate a command value indicative of a target state of the motor; an error amplifier configured to generate an error signal by amplifying an error between the detection signal and the command value; a pulse width modulator configured to generate a pulse signal; and an output circuit. The command value generating unit is configured to provide a variation to the command value.

Abstract: In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state.

Abstract: A copolymer include repeat units derived from an acid-labile monomer, an aliphatic lactone-containing monomer, a C1-12 alkyl(meth)acrylate in which the C1-12 alkyl group includes a specific base-soluble group, a photoacid-generating monomer that includes an aliphatic anion, and a neutral aromatic monomer having the formula wherein R1, R2, R3, X, m, and Ar are defined herein. The copolymer is used as a component of a photoresist composition. A coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using the coated substrate are described.

Abstract: A module (1) includes a first functional device (2) and a second functional device (3). The first functional device (2) includes a base electrode, an emitter electrode and a collector electrode. The second functional device (3) includes at least one electrode. The module (1) further includes a conductive frame (4). One of the base electrode, the emitter electrode, and the collector electrode of the first functional device (2) is directly connected to the frame (4). The electrode of the second functional device (3) is also directly connected to the frame (4). The frame (4) includes a portion serving as a terminal for external connection.

Abstract: The invention provides an electronic circuit capable of reducing surge voltage while reducing switching loss when a MOSFET is turned off. A capacitor (91) is connected between apart closer to a first power source terminal (31) of a U-phase module (3) in a bus bar (61a) and a part closer to a second power source terminal (32) of the U-phase module (3) in a bus bar (64a). A capacitor (92) is connected between apart closer to a first power source terminal (41) of a V-phase module (4) in a bus bar (62) and a part closer to a second power source terminal (42) of the V-phase module (4) in a bus bar (65). A capacitor (93) is connected between a part closer to a first power source terminal (51) of a W-phase module (5) in a bus bar (63) and a part closer to a second power source terminal (52) of the W-phase module (5) in a bus bar (66).

Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? ? n + 0.30 × ( ? 4 ? ? n ) ? T ? 3 ? ? 4 ? ? n + 0.45 × ( ? 4 ? ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Abstract: The present invention provides a light emitting diode (LED) driving device, which comprises: a direct current/direct current (DC/DC) controller, for controlling an output segment that is used to generate an output voltage from an input voltage and supply the output voltage to an LED; an output current driver, for generating an output current of the LED; and an output discharging circuit, for performing, based on a predetermined control signal, discharging of the output voltage when a generation action of the output voltage and the output current stops.

Abstract: A charge control device includes a control circuit configured to monitor a charge voltage and a charge current of a battery and perform output feedback control upon the charge voltage and the charge current to thereby achieve constant voltage charge or constant current charge of the battery; and an adjusting circuit configured to adjust the output feedback control of the control circuit based on charge state information of the battery obtained by a gas gauge device.

Abstract: A pulse modulator generates a pulse modulation signal SPM having a duty ratio which is adjusted according to a feedback voltage Vfb that corresponds to the output voltage VOUT of a DC/DC converter. A second oscillator generates a second cyclic signal which is asserted with each of a predetermined second period. A light load detection circuit generates a light load detection signal which is asserted when the feedback voltage Vfb becomes lower than a first threshold voltage. A driving circuit drives a switching transistor according to the pulse modulation signal SPM. Furthermore, the driving circuit suspends the driving of the switching transistor during a period until the second cyclic signal is next asserted after the light load detection signal is asserted.

Abstract: A semiconductor device includes: a first conductivity type semiconductor substrate; and a plurality of second conductivity type semiconductor regions, the respective second conductivity type semiconductor regions being embedded in a plurality of stripe shaped trenches formed in the semiconductor substrate so that the respective second conductivity type semiconductor regions are extended in the row direction or the column direction in parallel with a first principal surface of the semiconductor substrate and are spaced in a fixed gap mutually. The semiconductor substrate and the plurality of the semiconductor regions are depleted by a depletion layer extended in the direction in parallel to the first principal surface from a plurality of pn junction interfaces, and the respective pn junction interfaces are formed between the semiconductor substrate and the plurality of the semiconductor regions.

Abstract: Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

Abstract: A detection resistor is arranged on a path of an LED string. A controller generates a gate pulse signal having a duty ratio adjusted such that the voltage drop at the detection resistor matches a predetermined reference voltage. Furthermore, the controller receives a dimming control signal which indicates the duty ratio of the burst dimming operation, and generates a corresponding burst dimming pulse. According to the gate pulse signal, the first driver drives an output circuit configured to generate a driving voltage. A second driver switches a path of a driving current between connection and disconnection according to the burst dimming pulse. A duty ratio detection unit controls the frequency of the gate pulse signal according to the duty ratio indicated by the dimming control signal.

Abstract: A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.

Abstract: A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.