Abstract: The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.

Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

Abstract: An inkjet head includes a substrate that defines a cavity in which ink is stored, a vibrating membrane that is supported by the substrate and that defines the cavity, and a piezoelectric device that is disposed on the vibrating membrane and that changes a volume of the cavity by displacing the vibrating membrane. The piezoelectric device includes a lower electrode, a piezoelectric membrane that is disposed on the lower electrode, and an upper electrode that is disposed on the piezoelectric membrane and that faces the lower electrode with the piezoelectric membrane interposed between the upper electrode and the lower electrode. The piezoelectric membrane includes a columnar structure layer and an amorphous structure layer of a piezoelectric material. The amorphous structure layer is stacked contiguously with the columnar structure layer.

Abstract: A switching power control circuit includes an analog-to-digital converter (ADC) configured to convert an analog direct current (DC) voltage into a digital voltage; a digital compensator configured to set a gain and phase characteristics of the digital voltage output from the ADC and output a digital compensation value; and a pulse generating circuit configured to generate at least one driving signal based on the digital compensation value, wherein the pulse generating circuit is switched by an ON/OFF signal for turning on or off an output of the driving signal from the pulse generating circuit and a control scheme selection signal for selecting a predetermined driving signal from the driving signal.

Abstract: A comparator compares a first input voltage and a second input voltage to generate a comparative output depending on a result of the comparison. The comparator includes a first input terminal configured to receive the first input voltage, a second input terminal configured to receive the second input voltage, a differential pair including a first input transistor whose control terminal is connected with the first input terminal and a second input transistor whose control terminal is connected with the second input terminal, a tail current source configured to supply a tail current to the differential pair, and a load circuit connected to the first input transistor and the second input transistor, and the tail current source increases the tail current, as the first input voltage approaches the second input voltage, depending on the first input voltage.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

Abstract: An electronic circuit includes a bipolar device, a unipolar device connected in parallel to the bipolar device, and an output line connected to the bipolar device and to the unipolar device. An inductance between the unipolar device and the output line is smaller than an inductance between the bipolar device and the output line.

Abstract: Coating compositions for use with an overcoated photoresist are provided where the coating composition comprises a resin containing cyanurate groups and hydrophobic groups. The coating composition can enhance resolution of an overcoated photoresist relief image.

Abstract: A semiconductor device includes a first etching stopper film and a second etching stopper film that are formed to be spaced apart from one another on a first inter-layer insulating film; a metal thin film resistor formed to extend over the first and second etching stopper films; a second inter-layer insulating film formed on the first inter-layer insulating film to cover the first and second etching stopper films and the metal thin film resistor; a first contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the first etching stopper film by penetrating through the metal thin film resistor; and a second contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the second etching stopper film by penetrating through the metal thin film resistor.

Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: Provided is a switching power source device in which fluctuation of the switching frequency can be suppressed without impairing the advantages of a non-linear control system. A switching power source device is provided with: switching control units of non-linear control type that generate an output voltage (out) from an input voltage (IN) by performing ON/OFF control of switching elements in accordance with the results of comparing a feedback voltage (FB) and reference voltage (REF); and an ON time setting unit that monitors switching voltage (SW) appearing at one end of the switch terminals, and sets the ON time (Ton) of the switching element in the switching control units based on the duty of the switching voltage (SW).

Abstract: The present invention relates to a pharmaceutical or nutraceutical preparation comprising a) a core containing a pharmaceutically or nutraceutically active substance; and b) an inner controlling layer surrounding the core comprising i) one or a mixture of a plurality of (meth)acrylate copolymers bearing a cationic group or a group that can be converted to a cationic group; and ii) one or a mixture of a plurality of polymers or copolymers bearing an anionic group or group that can be converted to an anionic group; and c) an outer controlling layer comprising one or a mixture of a plurality of polymers or copolymers bearing an anionic group or group that can be converted to an anionic group and to tablets or capsules comprising same.

Abstract: A microdomained aqueous emulsion polymer is provided. The polymer comprises a first domain having a Tg of from ?80 to ?10° C. and comprising from 80 to 100 wt % of acrylic monomer; and a non-crosslinked second domain having a Tg of from 50 to 120° C. and comprising, as polymerized unit and based on the weight of the second domain, from 50 to 100 wt % of styrenic monomer; wherein the content of the second domain ranges from greater than 6 wt % to 30 wt % of the total weight of the first domain and the second domain. The polymer is suitable for applications including adhesives and binders, especially for pressure sensitive adhesives.

Abstract: Embodiments of the present disclosure are directed towards coating compositions comprising from 50 to 85 percent of an aqueous dispersion based on a total weight of the coating composition, an abrasion reducing composition, a solvent, a basic water composition, and a crosslinker.

Abstract: Provided is a pressure sensitive adhesive article comprising (a) a substrate (Sa), (b) in contact with said substrate (Sa), a layer (Lb) of a composition (Cb) that comprises one or more acrylic polymer (POLb) having Tg of ?10° C. or lower, and (c) in contact with said layer (Lb), a layer (Lc) of a composition (Cc) that comprises one or more acrylic polymer (POLc) that comprises 20% to 90% polymerized units of one or more high-aliphatic vinyl monomer, by weight based on the weight of said polymer (POLc). Also provided is a bonded article made by a process of contacting a substrate (Sd) with such a pressure sensitive adhesive article, wherein said substrate (Sd) is in contact with said layer (Lc).

Abstract: A light-emitting element according to the present invention includes a semiconductor light-emitting element having a front surface and a rear surface so that light is extracted from the rear surface, and having a first n-side electrode and a first p-side electrode on the front surface, and a support element having a conductive substrate having a front surface and a rear surface as well as a second n-side electrode and a second p-side electrode formed on the front surface of the conductive substrate, the first n-side electrode and the second n-side electrode, and the first p-side electrode and the second p-side electrode are so bonded to one another respectively that the semiconductor light-emitting element is supported by the support element in a facedown posture downwardly directing the front surface, and the support element has an n-side external electrode and a p-side external electrode formed on the rear surface of the conductive substrate, a conductive via passing through the conductive substrate from th

Abstract: A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n? drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating region formed on the side of the looped trench opposite to the FET structure; and an emitter connecting part that is electrically connected to the n+ emitter region and a trench gate provided in the same trench, the emitter connecting part and the trench gate being insulated from each other by the looped trench. The trench gate faces the FET structure, and the emitter connecting part faces the p-type floating region, across an insulating film.

Abstract: An LED lamp A includes a plurality of LED modules 2 each including an LED chip 21, and a support member 1 including a support surface 1a on which the LED modules 2 are mounted. The LED modules 2 include a plurality of kinds of LED modules, or a first through a third LED modules 2A, 2B and 2C different from each other in directivity characteristics that represent light intensity distribution with respect to light emission directions. This arrangement ensures that the entire surrounding area can be illuminated with sufficient brightness.