Abstract: A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer.

Abstract: An organic device has a hole current-electron current conversion layer which comprises a laminate of an electron transportation section and a hole transportation section. The electron transportation section includes a charge transfer complex formed upon an oxidation-reduction reaction between a reduced low work function metal and an electron-accepting organic compound, the reduced metal being produced upon an in-situ thermal reduction reaction caused upon contact, through lamination or mixing by co-deposition, of an organic metal complex compound or an inorganic compound containing at least one metal ion selected from ions of low work function metals having a work function of not more than 4.0 eV, and a thermally reducible metal capable of reducing a metal ion contained in the organic metal complex compound or the inorganic compound in vacuum to the corresponding metal state, and the electron transportation section having the electron-accepting organic compound in the state of radical anions.

Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

Abstract: A MEMS sensor according to the present invention includes a base substrate including a displaceably supported movable portion and a lid substrate covering the movable portion and functioning as a magnetic sensor that detects magnetism by making use of the Hall effect.

Abstract: A chip part is provided that includes a substrate 2 in which an element region 5 and an electrode region 16 are set, an insulating film (a first insulating film 9 and a second insulating film 3) which is formed on the substrate 2 and which selectively includes an internal concave/convex structure 18 in the electrode region 16 on a surface, a first connection electrode 3 and a second connection electrode 4 which include, at a bottom portion, an anchor portion 24 entering the concave portion 17 of the internal concave/convex structure 18 and which include an external concave/convex structure 6, 7 on a surface on the opposite side and a circuit element which is disposed in the element region 5 and which is electrically connected to the first connection electrode 3 and the second connection electrode 4.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer provided with a gate trench, a first conductivity type source region formed to be exposed on a surface side of the semiconductor layer, a second conductivity type channel region formed on a side of the source region closer to a back surface of the semiconductor layer to be in contact with the source region, a first conductivity type drain region formed on a side of the channel region closer to the back surface of the semiconductor layer to be in contact with the channel region, a gate insulating film formed on an inner surface of the gate trench, and a gate electrode embedded inside the gate insulating film in the gate trench, while the channel region includes a channel portion formed along the side surface of the gate trench so that a channel is formed in operation and a projection projecting from an end portion of the channel portion closer to the back surface of the semiconductor layer toward the back surface.

Abstract: An amino compound-modified epoxy resin liquid composition including a reaction product of (a) at least one amino compound; and (b) at least one liquid epoxy resin compound having a low viscosity as measured at room temperature wherein the amino compound-modified epoxy resin liquid composition comprises a liquid has a low viscosity; a curable coating composition including (A) at least one of the above amino compound-modified epoxy resin liquid composition, and (B) at least one curing agent; a thermoset coating product prepared from the above curable composition; and a process for preparing the above amino compound-modified epoxy resin liquid composition, a process for preparing the above curable composition and a process for preparing the above coating.

Abstract: A method of producing an alcohol compound from an organic acid compound including the step of heating a solution of the organic acid compound in the presence of a heterogeneous catalyst including transition metal supported upon a cross-linked functional polymer.

Abstract: A method of eluting metal ions from a bed of metal-loaded chelating resin wherein the resin includes a crosslinked styrene-divinylbenzene copolymer matrix with pendent methyleneaminopyridine or phosphonic acid groups and the method includes the step of passing an eluant through the bed to at least partially remove the metal ions from the chelating resin and create a metal-rich eluate, wherein the eluant includes an aqueous solution comprising an amino acid compound having a molecular weight less than 500 Daltons.

Abstract: A switching power supply device includes: a positive voltage output circuit connected to a direct-current power supply, the positive voltage output circuit including a first switching element, a voltage boosting inductor, a first rectifying element and a first capacitor; a negative voltage output circuit connected to the power supply, the negative voltage output circuit including a second switching element, a voltage dropping inductor, a second rectifying element and a second capacitor; and an adder circuit configured to add switching currents flowing when the first and the second switching elements are operated. The circuit elements of the positive voltage output circuit are symmetrical with those of the negative voltage output circuit. The first switching current of the positive voltage output circuit and the second switching current of the negative voltage output circuit are generated in mutually opposite directions and are inputted to the adder circuit.

Abstract: A control circuit of a DC/DC converter includes: a pulse modulator configured to generate a pulse signal; and a driver configured to switch a switching transistor based on the pulse signal. The pulse modulator includes an on signal generator to generate an on signal. The on signal generator includes: a bottom detection comparator configured to compare a voltage of one end of an auxiliary winding with a predetermined threshold voltage and generate a bottom detection signal; a first time-out circuit configured to generate a first time-out signal asserted when the bottom detection signal is not asserted; a second time-out circuit configured to generate a second time-out signal asserted when the bottom detection signal is not asserted; and a logic part configured to generate the on signal based on the bottom detection signal, the first time-out signal and the second time-out signal.

Abstract: A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.

Abstract: The terahertz-wave connector includes: a 2D-PC slab; lattice points periodically arranged in the 2D-PC slab, the lattice points for diffracting the THz waves in PBG frequencies of photonic band structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC slab; a 2D-PC waveguide disposed in the 2D-PC slab and formed with a line defect of the lattice points; and an adiabatic mode converter disposed at the edge face of the 2D-PC slab to which the 2D-PC waveguide extended, the 2D-PC waveguide extended to the adiabatic mode converter. There is provided also the THz-wave IC to which such a terahertz-wave connector is applied.

Abstract: A method for removing uranium from an uranium-containing aqueous solution having a salinity of at least 0.5 ppt, comprise the step of passing the solution through a bed of anion exchange resin impregnated with polyphenol.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ?40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

Abstract: A synergistic antimicrobial composition containing lenacil and terbutryn is provided. Also provided is a method of inhibiting the growth of or controlling the growth of microorganisms in a building material by adding such a synergistic antimicrobial composition. Also provided is a coating composition containing such a synergistic antimicrobial composition, and a dry film made from such a coating composition.

Abstract: There is provided an enclosure comprising: a polymeric film; wherein said polymeric film comprises one or more copolymers of ethylene with a polar monomer; and wherein the oxygen transmission rate of said enclosure is 8,000 to 16,000 cm3/hour. Also provided is a method of handling bananas comprising: (a) harvesting green bananas; (b) then placing said green bananas into such an enclosure; (c) then storing said enclosure at 20° C. or lower for 1 week or longer; (d) then ripening said bananas or allowing said bananas to ripen.

Abstract: A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.