Abstract: A voltage generating unit includes an output transistor arranged as a first-terminal side extension of a path that includes a first terminal, a first resistive film, and a second terminal, and is configured to apply a first bias voltage to the first terminal. A current detection unit includes a detection transistor connected to the output transistor such that they form a current mirror circuit, a detection resistor arranged on a path of the detection transistor, and an amplifier circuit configured to amplify the difference between a voltage drop across a detection resistor and a predetermined voltage, and to output the difference thus amplified as a value which represents a panel current.

Abstract: A semiconductor device includes a semiconductor layer made of a wide bandgap semiconductor and including a gate trench; a gate insulating film formed on the gate trench; and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film. The semiconductor layer includes a first conductivity type source region; a second conductivity type body region; a first conductivity type drift region; a second conductivity type first breakdown voltage holding region; a source trench passing through the first conductivity type source region and the second conductivity type body region from the front surface and reaching a drain region; and a second conductivity type second breakdown voltage region selectively formed on an edge portion of the source trench where the sidewall and the bottom wall thereof intersect with each other in a parallel region of the source trench.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

Abstract: The semiconductor device includes a semiconductor substrate, a plurality of source regions formed in a stripe shape on the semiconductor substrate, a plurality of gate electrodes formed in a stripe shape between a plurality of the stripe shaped source regions on the semiconductor substrate, an insulating film for covering the source regions and the gate electrodes, the insulating film including a contact hole for partly exposing the source regions in a part of a predetermined region with respect to a longitudinal direction of the source regions; and a source electrode formed on the insulating film and electrically connected to the source region via the contact hole.

Abstract: The invention relates to light guide plates, which are suitable for backlighting LCD monitors as well as information and advertising signs and which are illuminated at the edges and re-emit the light fed at the edges via at least one of the two surfaces located perpendicular to the edges. For the light of a light source that is fed at the edges to be able to leave the light guide plate again via one of the surfaces by overcoming total reflection, the light rays in the light guide plate have to be deliberately deflected. At one of the two surfaces of the light guide plate, the light guide plates are provided with optical impurities (2), which are protected against damage by a film (5). Furthermore, a method for the simplified application of said impurities is provided.

Abstract: An aqueous leather coating composition having improved storage stability includes 1 to 40 weight percent of an emulsifiable polyisocyanate comprising the reaction product of an isocyanurate and an emulsifier, wherein the average isocyanate functionality of the emulsifiable polyisocyanate is 2 to 4.5; and 60 to 99 weight percent of an aqueous polymer dispersion having a Tg of ?70 to 40° C. and selected from a (meth)acrylic polymer dispersion, a polyurethane dispersion, a (meth)acrylic polymer/polyurethane hybrid dispersion and a combination comprising one or more of the foregoing aqueous polymer dispersions, wherein all weight percents are on a dry basis, and based on the total dry amount of the emulsifiable polyisocyanate and the aqueous polymer dispersion. The aqueous polymer dispersion can be free of hydroxyl groups. Also disclosed are a method of coating leather with the composition, and a coated leather article.

Abstract: An organic electroluminescent device including a substrate, the substrate includes, laminated thereon, an anode layer; an organic structure including at least one light-emissive layer or at least one light-emissive unit having at least one light-emissive layer; a low resistance electron-transporting layer including a mixed layer of an electron-donating metal dopant and an organic compound; an organometallic complex-contained layer including an organometallic complex compound containing at least one metal ion selected from the group having an alkaline metal ion, an alkaline earth metal ion and a rare earth metal ion; a reducing reaction generating layer; and a cathode layer, in that order. At least one of the anode layer and the cathode layer is transparent.

Abstract: The invention relates to a method for obtaining magnetite using red mud, which is produced by the method used by Bayer for the manufacture of aluminum. The method according to the invention comprises at least the reduction of hematite and/or goethite to form magnetite using at least one reductant, said reductant containing at least one vegetable oil and/or a fat and/or carbon.

Abstract: A laminate type energy device includes a plurality of cells, each having a laminated body of at least two layers laminated such that positive and negative electrodes are alternated, with a separator through which an electrolyte and ions are passed, interposed between the positive and negative active material electrodes, and positive and negative lead-out electrodes are exposed. Tab electrodes that allow electricity to flow outside of the laminate type energy device are joined to the lead-out electrodes via connecting portions. The cells are sealed by a sheathing laminate sheet via a sealing material covering at least the connecting portions.

Abstract: A light emitting device is capable of enhancing the radiant intensity on a single direction. The light emitting device includes a substrate and an LED chip bonded to the substrate, wherein the substrate has a first cavity formed thereon having a first bottom surface for disposing the LED chip and a first lateral connecting to the first bottom surface, and the substrate has a second cavity formed thereon having a second bottom surface for bonding the metal wire and a second lateral connecting to the second bottom surface; and the first lateral has a notch formed thereon, which connects to the second bottom surface and the second lateral, and an area of the second bottom surface of the second cavity is smaller than that of the first bottom surface of the first cavity.

Abstract: A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

Abstract: The present invention relates to a process for producing coated mouldings with fully or partly structured surfaces. The present invention additionally describes a system for performing this process.

Abstract: Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p+ region for a diode that forms a pn junction with the n-type region for a diode at the bottom of the diode trench; and a schottky electrode that forms a schottky junction with the n-type region for a diode at side walls of the diode trench.

Abstract: A method for removing uranium from an uranium-containing aqueous solution having a salinity of at least 0.5 ppt, comprise the step of passing the solution through a bed of anion exchange resin impregnated with polyphenol.

Abstract: Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.

Abstract: A switching power supply device includes: a non-linear control type switching control unit that, in accordance with a result of a comparison between a feedback voltage and a reference voltage, performs on/off control of a switch element, and thereby generates an output voltage from an input voltage; a backflow current detection unit that, upon detecting a backflow current flowing to the switch element, forcibly switches off the switch element; and an on-time setting unit that sets an on-time of the switch element, in a case of the backflow current not being detected, in accordance with a duty of the switch element, and in a case of the backflow current being detected, in accordance with a switch voltage appearing at one end of the switch element or the output voltage.

Abstract: A recording material including a support and disposed thereon at least one layer including certain core/shell polymeric particles, the particles having, whey dry, at least one void; and an opacity reducer is provided. A method for providing an image using the recording sheet is also provided.

Abstract: A motor drive apparatus comprises: a position signal generation portion that generates a position signal corresponding to a rotor position of a brushless DC motor; and a logic portion that when starting the brushless DC motor, disposes a non-energizing period immediately after starting forced commutation at a phase switchover timing corresponding to a predetermined forced commutation frequency and performs energizing control of the brushless DC motor such that usual commutation is started at a phase switchover timing corresponding to the position signal that is generated during an inertial rotation of the rotor.

Abstract: A counter includes: a count processing circuit including a nonvolatile register; a regulator receiving voltage from a direct current power supply, generating power supply voltage based on the received voltage for the count processing circuit, and supplying the power supply voltage to the count processing circuit; and a delay circuit receiving the power supply voltage and supplying a count signal to the count processing circuit after the power supply voltage is supplied to the count processing circuit. After having received the power supply voltage from the regulator, the count processing circuit updates a count value in response to the count signal and holds the updated count value in the nonvolatile register in a non-volatile manner.